Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

1999 ◽  
Vol 25 (1) ◽  
pp. 1-3 ◽  
Author(s):  
V. V. Mamutin ◽  
V. P. Ulin ◽  
V. V. Tret’yakov ◽  
S. V. Ivanov ◽  
S. G. Konnikov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
Cubic Gan ◽  
Porous Gaas

Photoluminescence study of Si doping cubic GaN grown on (001) GaAs substrates by Molecular Beam Epitaxy

2001 ◽  
Vol 227-228 ◽  
pp. 420-424 ◽  
Author(s):  
Z.Q Li ◽  
H Chen ◽  
H.F Liu ◽  
L Wan ◽  
Q Huang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Study ◽  
Si Doping ◽  
Gaas Substrates ◽  
Cubic Gan

Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy

2000 ◽  
Vol 76 (18) ◽  
pp. 2580-2582 ◽  
Author(s):  
K. Amimer ◽  
A. Georgakilas ◽  
K. Tsagaraki ◽  
M. Androulidaki ◽  
D. Cengher ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
Cubic Gan

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

2012 ◽  
Vol 20 (4) ◽  
Author(s):  
I. Izhnin ◽  
A. Izhnin ◽  
H. Savytskyy ◽  
O. Fitsych ◽  
N. Mikhailov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Structural Defects ◽  
Donor Concentration ◽  
Ion Milling ◽  
Electrical And Optical Properties ◽  
Gaas Substrates ◽  
Cdte Buffer

AbstractThe Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.

Structural characterization of molecular beam epitaxy grown ZnSe-based layers on GaAs substrates for blue–green laser diodes

2000 ◽  
Vol 360 (1-2) ◽  
pp. 195-204 ◽  
Author(s):  
G. Kiriakidis ◽  
K. Moschovis ◽  
P. Uusimaa ◽  
A. Salokatve ◽  
M. Pessa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Green Laser ◽  
Gaas Substrates

Molecular Beam Epitaxy of GaSb on GaAs Substrates with Compositionally Graded LT-GaAs x Sb 1- x Buffer Layers

2017 ◽  
Vol 34 (1) ◽  
pp. 018101
Author(s):  
Hai-Long Yu ◽  
Hao-Yue Wu ◽  
Hai-Jun Zhu ◽  
Guo-Feng Song ◽  
Yun Xu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Gaas Substrates ◽  
Lt Gaas

Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001)

2002 ◽  
Vol 299 (1) ◽  
pp. 79-84 ◽  
Author(s):  
M Xu ◽  
C.X Liu ◽  
H.F Liu ◽  
G.M Luo ◽  
X.M Chen ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cubic Gan ◽  
Gan Film ◽  
Thermal Stability Of
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