Mechanisms of heteroepitaxial growth of cadmium telluride thin films in a thermal field of a temperature gradient

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

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Effect of Gamma irradiation on the structural and optical properties of cadmium telluride thin films

Journal of Physics Conference Series ◽

10.1088/1742-6596/1879/3/032108 ◽

2021 ◽

Vol 1879 (3) ◽

pp. 032108

Author(s):

Eman M. Noori

Keyword(s):

Thin Films ◽

Optical Properties ◽

Gamma Irradiation ◽

Cadmium Telluride ◽

Structural And Optical Properties

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Solid Phase Growth of some Metal and Metal Oxide Thin Films on Sapphire and Quartz Glass Substrates

Materials Science Forum ◽

10.4028/www.scientific.net/msf.753.505 ◽

2013 ◽

Vol 753 ◽

pp. 505-509

Author(s):

Yuichi Sato ◽

Toshifumi Suzuki ◽

Hiroyuki Mogami ◽

Fumito Otake ◽

Hirotoshi Hatori ◽

...

Keyword(s):

Thin Films ◽

Quartz Glass ◽

Glass Substrate ◽

Solid Phase ◽

Quartz Glass Substrate ◽

Heteroepitaxial Growth ◽

Phase Growth ◽

Single Crystalline ◽

Glass Substrates ◽

Amorphous Quartz

Solid phase growth of thin films of copper (Cu), aluminum (Al) and zinc oxide (ZnO) on single crystalline sapphire and quartz glass substrates were tried by heat-treatments and their crystallization conditions were investigated. ZnO thin films relatively easily recrystallized even when they were deposited on the amorphous quartz glass substrate. On the other hand, Cu and Al thin films hardly recrystallized when they were deposited on the quartz glass substrate. The metal thin films could be recrystallized at only extremely narrow windows of the heat-treatment conditions when they were deposited on the single crystalline sapphire substrate. The window of the solid phase heteroepitaxial growth condition of the Al film was wider than that of the Cu film.

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From thin films to shaped platelets: effects of temperature gradient on SnS synthesis

Thin Solid Films ◽

10.1016/j.tsf.2020.138507 ◽

2020 ◽

pp. 138507

Author(s):

Thiago Carvalho ◽

Myriano H. Oliveira ◽

R. Magalhães-Paniago ◽

Andre Santarosa Ferlauto

Keyword(s):

Thin Films ◽

Temperature Gradient ◽

Effects Of Temperature

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In-Situ Diagnostics at High Pressures: Ellipsometric and Rheed Studies of the Growth of Yba2Cu3O7

MRS Proceedings ◽

10.1557/proc-502-237 ◽

1997 ◽

Vol 502 ◽

Cited By ~ 4

Author(s):

Dave H. A. Blank ◽

Horst Rogalla

Keyword(s):

Thin Films ◽

High Pressures ◽

High Vacuum ◽

Pulsed Laser ◽

Complex Oxide ◽

High Energy ◽

Diagnostic Tools ◽

Heteroepitaxial Growth ◽

Deposition Parameters

ABSTRACTPulsed Laser and Sputter Deposition are used for the fabrication of complex oxide thin films at relatively high oxygen pressures (up to 0.5 mBar). This high pressure hampers the application of a number of in-situ diagnostic tools. One of the exceptions is ellipsometry. Using this technique we studied in-situ the growth of off-axis sputtered Yba2Cu3O6+x thin films on (001) SrTiO3 as a function of the deposition parameters. Furthermore, the oxidation process from O(6) to O(7) has been studied by performing spectroscopic ellipsometry during isobaric cooling procedures.Another suitable in-situ monitoring technique for the growth of thin films is Reflection High Energy Electron Diffraction (RHEED). In general this is a (high) vacuum technique. Here, we present an RHEED-system in which we can observe clear diffraction patterns up to a deposition pressure of 0.5 mBar. The system has been used for in-situ monitoring of the heteroepitaxial growth of YBa2Cu3 06+x on SrTiO3 by pulsed laser deposition.

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Correction: Study on the efficient PV/TE characteristics of the self-assembled thin films based on bismuth telluride/cadmium telluride

RSC Advances ◽

10.1039/c7ra90086d ◽

2017 ◽

Vol 7 (63) ◽

pp. 39685-39685

Author(s):

Vivekanandan Raman ◽

Dinah Punnoose ◽

Pari Baraneedharan ◽

Sunkara Srinivasa Rao ◽

Chandu V. V. M. Gopi ◽

...

Keyword(s):

Thin Films ◽

Cadmium Telluride ◽

Bismuth Telluride ◽

The Self ◽

Self Assembled

Correction for ‘Study on the efficient PV/TE characteristics of the self-assembled thin films based on bismuth telluride/cadmium telluride’ by Vivekanandan Raman et al., RSC Adv., 2017, 7, 6735–6742.

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