Solid Phase Growth of some Metal and Metal Oxide Thin Films on Sapphire and Quartz Glass Substrates

2013 ◽  
Vol 753 ◽  
pp. 505-509
Author(s):  
Yuichi Sato ◽  
Toshifumi Suzuki ◽  
Hiroyuki Mogami ◽  
Fumito Otake ◽  
Hirotoshi Hatori ◽  
...  

Solid phase growth of thin films of copper (Cu), aluminum (Al) and zinc oxide (ZnO) on single crystalline sapphire and quartz glass substrates were tried by heat-treatments and their crystallization conditions were investigated. ZnO thin films relatively easily recrystallized even when they were deposited on the amorphous quartz glass substrate. On the other hand, Cu and Al thin films hardly recrystallized when they were deposited on the quartz glass substrate. The metal thin films could be recrystallized at only extremely narrow windows of the heat-treatment conditions when they were deposited on the single crystalline sapphire substrate. The window of the solid phase heteroepitaxial growth condition of the Al film was wider than that of the Cu film.

2021 ◽  
Vol 14 (02) ◽  
pp. 2151012
Author(s):  
Natangue Heita Shafudah ◽  
Hiroki Nagai ◽  
Mitsunobu Sato

Cubic or tetragonal zirconia thin films of transparent and 100 nm thickness were selectively formed on a quartz glass substrate by heat-treating the molecular precursor films involving Zr(IV) complexes of nitrilotriacetic acid, at 500[Formula: see text]C in air for 1 h. A precursor solution was prepared by a reaction of the ligand and zirconium tetrabutoxide in alcohol under the presence of butylamine. By the addition of H2O2 or H2O into the solution, the spin-coated precursor films were converted to cubic zirconia thin films by the abovementioned procedure. Further, the identical phase was produced also in the case of the electro-sprayed precursor film which was formed by an addition of H2O2 into the solution. On the other hand, the tetragonal zirconia thin film was obtained from a precursor film formed by using a solution dissolving the original Zr(IV) complex of the ligand, without H2O2 nor H2O. The crystal structure of all thin films was determined by using both the X-ray diffraction (XRD) patterns and Raman spectra. Thus, the zirconia thin films of both crystals could be facilely and selectively obtained with no use of hetero-metal ion stabilizers. The XPS spectra of the thin films show that the O/Zr ratio of the cubic phase is 1.37 and slightly larger than tetragonal one (1.29), and also demonstrate that the nitrogen atoms, which may contribute to stabilize these metastable phases at room temperature, of about 5−7 atomic% was remained in the resultant thin films. The adhesion strengths of cubic zirconia thin film onto the quartz glass substrate was 68 MPa and larger than that of tetragonal one, when the precursor films were formed via a spin coating process. The optical and surface properties of the thin films were also examined in relation to the crystal systems.


Coatings ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1050
Author(s):  
Natangue Heita Shafudah ◽  
Hiroki Nagai ◽  
Yutaka Suwazono ◽  
Ryuhei Ozawa ◽  
Yukihiro Kudoh ◽  
...  

Titania precursor films were electrosprayed on a quartz glass substrate, which was pre-modified with an ultra-thin film obtained by spin-coating a single-walled carbon nanotube (SWCNT) dispersed solution. The X-ray diffraction patterns of the thin films obtained by heat-treating the precursor films at 500 °C in air for 1 h indicated that the formed crystals were anatase. A new route to fabricate transparent thin films on the insulating substrate via electrospray deposition (ESD) was thus attained. The photoluminescence spectrum of the thin film showed a peak at 2.23 eV, assignable to the self-trapped exciton of anatase. The Raman spectrum of the thin film demonstrated that heat treatment is useful for removing SWCNTs. The thin film showed a water contact angle of 14 ± 2° even after being kept under dark conditions for 1 h, indicating a high level of hydrophilicity. Additionally, the thin film had a super-hydrophilic surface with a water contact angle of 1 ± 1° after ultraviolet light irradiation with an intensity of 4.5 mW cm−2 at 365 nm for 1 h. The importance of Ti3+ ions in the co-present amorphous phase, which was dominantly formed via the ESD process, for hydrophilicity was also clarified by means of X-ray photoelectron spectroscopy.


2000 ◽  
Vol 15 (10) ◽  
pp. 2249-2265 ◽  
Author(s):  
Jeanne M. McGraw ◽  
John D. Perkins ◽  
Falah Hasoon ◽  
Philip A. Parilla ◽  
Chollada Warmsingh ◽  
...  

We have found that by varying only the substrate temperature and oxygen pressure five different crystallographic orientations of V2O5 thin films can be grown, ranging from amorphous to highly textured crystalline. Dense, phase-pure V2O5 thin films were grown on SnO2/glass substrates and amorphous quartz substrates by pulsed laser deposition over a wide range of temperatures and oxygen pressures. The films' microstructure, crystallinity, and texturing were characterized by electron microscopy, x-ray diffraction, and Raman spectroscopy. Temperature and oxygen pressure appeared to play more significant roles in the resulting crystallographic texture than did the choice of substrate. A growth map summarizes the results and delineates the temperature and O2 pressure window for growing dense, uniform, phase-pure V2O5 films.


Author(s):  
Jie Chen ◽  
Jun Wang

Hexagon-shaped Zn oxide nano-pole films with terraces and steps have been successfully fabricated by means of a combined approach involving sol-gel process, high-temperature heat treatment, and the hydrothermal method. The surface chemistry and morphological features of the films were characterized by means of x-ray photoelectron spectroscopy and scanning electron microcopy. All the diffraction peaks in x-ray diffraction pattern match with those of the hexagonal wurtzite phase of Zn oxide. Transmittance measurements show that the optical transmittance of the sample synthesized at 520°C on quartz glass substrate is the highest, reaching about 65% in the visible-light region. Based on the detailed structural characterization and the nucleation-growth kinetics, we find that the whole crystallization process of wurtzite Zn oxide nano-poles includes nanocatalysis and layer-by-layer growth mechanism. The present study provides an important understanding of the growth mechanism for nano-pole synthesis of Zn oxide and related materials.


2015 ◽  
Vol 23 (8) ◽  
pp. 2243-2249 ◽  
Author(s):  
谢晋 XIE Jin ◽  
冯彦科 FENG Yan-ke ◽  
程剑 CHENG Jian ◽  
吴可可 WU Ke-ke

2019 ◽  
Vol 9 (21) ◽  
pp. 4509
Author(s):  
Weijia Yang ◽  
Fengming Wang ◽  
Zeyi Guan ◽  
Pengyu He ◽  
Zhihao Liu ◽  
...  

In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.


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