A new channel of the concentration decay of doubly charged helium ions in a plasma

2004 ◽  
Vol 97 (5) ◽  
pp. 673-676
Author(s):  
O. V. Zhigalov ◽  
Yu. A. Piotrovskii ◽  
Yu. A. Tolmachev
Keyword(s):  
Helium Ions ◽  
Doubly Charged

Production of Doubly Charged Helium Ions

1954 ◽  
Vol 25 (11) ◽  
pp. 1058-1060 ◽  
Author(s):  
John W. Bittner
Keyword(s):  
Helium Ions ◽  
Doubly Charged

Re-ionization of a partially ionized plasma by an Alfvén wave of moderate amplitude

1980 ◽  
Vol 24 (1) ◽  
pp. 65-74
Author(s):  
M. H. Brennan ◽  
M. L. Sawley
Keyword(s):  
Plasma Temperature ◽  
Torsional Wave ◽  
Alfven Wave ◽  
Helium Plasma ◽  
Acoustic Oscillations ◽  
Radial Density ◽  
Helium Ions ◽  
Wave Pulse ◽  
Partially Ionized ◽  
Doubly Charged

This paper reports on the use of forced magneto-acoustic oscillations to investigate the effect of a torsional hydromagnetic (Alfvén) wave pulse of moderate amplitude on the properties of a partially ionized afterglow helium plasma. Observations of the magnetic flux associated with the oscillations, measured at a number of frequencies, are used to determine radial density proffles and to provide estimates of plasma temperature. The torsional wave is shown to cause significant re-ionization of the plasma with no corresponding increase in the plasma temperature. The torsional wave is shown to cause significant re-ionization of the plasma with no corresponding increase in the plasma temperature. However, the presence of a number of energetic particles is evidenced by the production of a significant number of doubly charged helium ions.

scholarly journals Ion source based on Penning discharge for production of doubly charged helium ions

2017 ◽  
Vol 18 (2) ◽  
pp. 194-200 ◽  
Author(s):  
V.I. Voznyi ◽  
◽  
D.P. Shulha ◽  
O.O. Drozdenko ◽  
M.I. Zakharets ◽  
...  
Keyword(s):  
Ion Source ◽  
Helium Ions ◽  
Doubly Charged

REACTIONS OF DOUBLY CHARGED IONS WITH VARIOUS NEUTRALS

1979 ◽  
Vol 40 (C7) ◽  
pp. C7-21-C7-22
Author(s):  
K. Peska ◽  
E. Alge ◽  
H. Villinger ◽  
H. Störi ◽  
W. Lindinger
Keyword(s):  
Doubly Charged Ions ◽  
Doubly Charged ◽  
Charged Ions

Triatomic molecules

2018 ◽  
Author(s):  
John H. D. Eland ◽  
Raimund Feifel
Keyword(s):  
Degrees Of Freedom ◽  
Normal Modes ◽  
Electronic States ◽  
Triatomic Molecules ◽  
Doubly Charged Ions ◽  
Spectral Bands ◽  
Valence Electrons ◽  
Doubly Charged ◽  
Charged Ions ◽  
Double Ionisation

Double ionisation of the triatomic molecules presented in this chapter shows an added degree of complexity. Besides potentially having many more electrons, they have three vibrational degrees of freedom (three normal modes) instead of the single one in a diatomic molecule. For asymmetric and bent triatomic molecules multiple modes can be excited, so the spectral bands may be congested in all forms of electronic spectra, including double ionisation. Double photoionisation spectra of H2O, H2S, HCN, CO2, N2O, OCS, CS2, BrCN, ICN, HgCl2, NO2, and SO2 are presented with analysis to identify the electronic states of the doubly charged ions. The order of the molecules in this chapter is set first by the number of valence electrons, then by the molecular weight.

scholarly journals The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Temperatures ◽  
Point Defects ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
The Impact ◽  
Ingan Quantum Wells

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

scholarly journals Spectroscopic characterization of a thermodynamically stable doubly charged diatomic molecule: MgAr2+

2021 ◽  
Author(s):  
Dominik Wehrli ◽  
Matthieu Génévriez ◽  
Frédéric Merkt
Keyword(s):  
High Resolution ◽  
Diatomic Molecule ◽  
Spectroscopic Characterization ◽  
New Method ◽  
High Resolution Spectroscopy ◽  
Singly Charged ◽  
Doubly Charged

We present a new method to study doubly charged molecules relying on high-resolution spectroscopy of the singly charged parent cation, and report on the first spectroscopic characterization of a thermodynamically stable diatomic dication, MgAr2+.

Sign in / Sign up

Export Citation Format

Share Document