Morphological, Structural, and Optical Properties of Silicon Nanostructures Formed in a Solution Containing Hydrogen Hexafluorosilicate H2(SiF6)

2020 ◽  
Vol 128 (9) ◽  
pp. 1487-1491
Author(s):  
Sh. A. Zhumatova ◽  
S. M. Manakov ◽  
Ye. Sagidolda ◽  
M. B. Darmenkulova ◽  
R. M. Azamat ◽  
...  
2020 ◽  
Vol 128 (9) ◽  
pp. 1375
Author(s):  
Ш.А. Жуматова ◽  
С.М. Манаков ◽  
Е. Сагидолда ◽  
М.Б. Дарменкулова ◽  
Р.М. Азамат ◽  
...  

Boron doped porous silicon with the observed photoluminescence with a crystallographic orientation of (100), which was fabricated based on a p-type silicon substrate using electrochemical etching in a solution containing hexafluorosilicic acid and ethyl alcohol was studied. A comparative analysis of the morphology, structural and optical properties of silicon nanostructures obtained in a solution containing H2(SiF6) and ethanol and samples obtained in a solution containing HF and ethanol was performed. Morphology, structural and optical properties were studied using scanning probe microscopy and spectrophotometry. It was shown that samples of porous silicon obtained in a solution containing H2(SiF6) and ethanol are characterized by improved optical properties, in particular, they exhibit more intense photoluminescence compared to samples obtained in solutions with HF and ethyl alcohol.


2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Ramuvel Muthuvel ◽  
Manimaran Arunachalam ◽  
Vinayagar Karanthamalai ◽  
Ragavendran Venkatesan ◽  
Vishnukanthan Venkatachalapathy ◽  
...  

AbstractThe present work discusses the systematic study of mechanical properties of the silicon nanostructures formed by metal assisted chemical etching (MACE). Silver electrolyte solution, along with hydrogen fluoride, was utilized in formation of silicon nanostructures. An optimized condition of etching time and silver electrolyte concentration were utilized to obtain high aspect ratio, defect-free and high density nanowire arrays on Si wafers. The as-prepared silicon nanostructures (SiNS) were investigated by Scanning electron microscopy (SEM) and nano indentation technique to bring out the morphological and mechanical properties. Further, the variation in optical properties of the bulk silicon and Si nanowire arrays were also investigated to determine the formation of nanostructures.


2016 ◽  
Author(s):  
Mykola Pavlenko ◽  
Valerii Myndrul ◽  
Igor Iatsunskyi ◽  
Stefan Jurga ◽  
Valentyn Smyntyna

2018 ◽  
Vol 23 (3) ◽  
pp. 230-239
Author(s):  
E.P. Zaretskaya ◽  
◽  
V.F. Gremenok ◽  
A.V. Stanchik ◽  
A.N. Pyatlitski ◽  
...  

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.


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