scholarly journals Морфология, структурные и оптические свойства наноструктур кремния, полученные в растворе, содержащем гексафторосиликат водорода H-=SUB=-2-=/SUB=-(SiF-=SUB=-6-=/SUB=-)

2020 ◽  
Vol 128 (9) ◽  
pp. 1375
Author(s):  
Ш.А. Жуматова ◽  
С.М. Манаков ◽  
Е. Сагидолда ◽  
М.Б. Дарменкулова ◽  
Р.М. Азамат ◽  
...  
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Ethyl Alcohol ◽  
Scanning Probe Microscopy ◽  
Electrochemical Etching ◽  
Scanning Probe ◽  
Silicon Nanostructures ◽  
Structural And Optical Properties ◽  
Boron Doped ◽  
P Type

Boron doped porous silicon with the observed photoluminescence with a crystallographic orientation of (100), which was fabricated based on a p-type silicon substrate using electrochemical etching in a solution containing hexafluorosilicic acid and ethyl alcohol was studied. A comparative analysis of the morphology, structural and optical properties of silicon nanostructures obtained in a solution containing H2(SiF6) and ethanol and samples obtained in a solution containing HF and ethanol was performed. Morphology, structural and optical properties were studied using scanning probe microscopy and spectrophotometry. It was shown that samples of porous silicon obtained in a solution containing H2(SiF6) and ethanol are characterized by improved optical properties, in particular, they exhibit more intense photoluminescence compared to samples obtained in solutions with HF and ethyl alcohol.

Effect of Urea as a Stabiliser in the Thermal Immersion Method to Synthesise Zinc Oxide Nanostructures on Porous Silicon Nanostructures

2013 ◽  
Vol 832 ◽  
pp. 644-648 ◽  
Author(s):  
F.S. Husairi ◽  
Kevin Alvin Eswar ◽  
Azlinda Ab Aziz ◽  
Mohamad Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching ◽  
Zinc Nitrate ◽  
Synthesis Process ◽  
Silicon Nanostructures ◽  
Nitrate Hexahydrate ◽  
Zno Nanostructures ◽  
Zinc Oxide Nanostructures ◽  
Immersion Method ◽  
P Type

In this work, ZnO nanostructures were prepared using the catalytic immersion method (90 °C) with zinc nitrate hexahydrate (Zn (NO3)26H2O) as a precursor, urea (CH4N2O) as a stabiliser and porous silicon nanostructures (PSi) as a substrate. PSi prepared on p-type Si by using electrochemical etching method. Different molarity concentration ratios of Zn (NO3)26H2O to CH4N2O (2:1, 1:2, 1:4 and 1:6) were used in this work. The effects of the urea concentration during the synthesis process were discussed. The ZnO nanostructures were characterised using field emission scanning electron microscope (FESEM), photoluminescence (PL) and I-V probe. Porous nanoflakes were successfully synthesised on a p-type PSi substrate that was prepared by electrochemical etching. High-intensity photoluminescence (PL) at the optimum concentration indicated that urea is a good stabiliser to produce ZnO nanostructures with good crystallinity. The high resistance of ZnO/PSi show that electrical properties of PSi dominant compare to ZnO nanostructures.

scholarly journals THE EFFECT OF THICKNESS OF SILVER THIN FILM ON STRUCTURAL AND OPTICAL PROPERTIES OF POROUS SILICON

2016 ◽  
Vol 24 (06) ◽  
pp. 1750074 ◽  
Author(s):  
A. CETINEL ◽  
M. OZDOGAN ◽  
G. UTLU ◽  
N. ARTUNC ◽  
G. SAHIN ◽  
...  
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Film Thickness ◽  
Current Density ◽  
Electrochemical Etching ◽  
Average Pore Size ◽  
Etching Time ◽  
Pore Channel ◽  
Structural And Optical Properties ◽  
Ag Film

In this study, porous silicon (PS) samples were prepared on [Formula: see text]-type silicon (100) wafers by electrochemical etching method, varying the current density from 20 to 100[Formula: see text]mA/cm2 and keeping constant HF concentration (10%) and etching time of 15[Formula: see text]min. Then, Ag thin films, which have 10, 50 and 100[Formula: see text]nm film thicknesses, were deposited on PS layers by using thermal evaporation to investigate the influence of Ag film thickness on structural and optical properties of PS. The structural and optical properties of PS and Ag deposited PS layers have been investigated by XRD, FE-SEM, Raman and photoluminescence (PL) spectroscopy. FE-SEM XRD and Raman analyzes indicate that average pore size and porosity of PS layers increase with the increasing current density. Further, Ag nanoparticles have embedded in pore channel. PL measurement reveals that higher porosity of PS would be better to form the Ag–PS nano-composite material leading to stronger PL band. The PL spectra of PS and Ag–PS samples indicate that PL bands show blue shift with increasing current density and film thickness. Consequently, it has been found that the structural and optical properties of PS depend on current density and Ag film thickness individually.

Morphological, Structural, and Optical Properties of Silicon Nanostructures Formed in a Solution Containing Hydrogen Hexafluorosilicate H2(SiF6)

2020 ◽  
Vol 128 (9) ◽  
pp. 1487-1491
Author(s):  
Sh. A. Zhumatova ◽  
S. M. Manakov ◽  
Ye. Sagidolda ◽  
M. B. Darmenkulova ◽  
R. M. Azamat ◽  
...  
Keyword(s):  
Optical Properties ◽  
Silicon Nanostructures ◽  
Structural And Optical Properties

scholarly journals Systematic electrochemical etching of various metal tips for tunneling spectroscopy and scanning probe microscopy

2021 ◽  
Vol 92 (1) ◽  
pp. 015124
Author(s):  
Jiawei Zhang ◽  
Pinyuan Wang ◽  
Xuao Zhang ◽  
Haoran Ji ◽  
Jiawei Luo ◽  
...  
Keyword(s):  
Scanning Probe Microscopy ◽  
Electrochemical Etching ◽  
Tunneling Spectroscopy ◽  
Scanning Probe ◽  
Probe Microscopy

Structural, Surface Morphological and Photoluminescence Properties of Nanostructured Porous Silicon Material for Optoelectronics Application

2012 ◽  
Vol 584 ◽  
pp. 290-294 ◽  
Author(s):  
Jeyaprakash Pandiarajan ◽  
Natarajan Jeyakumaran ◽  
Natarajan Prithivikumaran
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Light Emission ◽  
Electrochemical Etching ◽  
Light Emitting Diode ◽  
Radiative Transition ◽  
Sem Images ◽  
Optoelectronic Application ◽  
Gap Opening ◽  
P Type

The promotion of silicon (Si) from being the key material for microelectronics to an interesting material for optoelectronic application is a consequence of the possibility to reduce its device dimensionally by a cheap and easy technique. In fact, electrochemical etching of Si under controlled conditions leads to the formation of nanocrystalline porous silicon (PS) where quantum confinement of photo excited carriers and surface species yield to a band gap opening and an increased radiative transition rate resulting in efficient light emission. In the present study, the nanostructured PS samples were prepared using anodic etching of p-type silicon. The effect of current density on structural and optical properties of PS, has been investigated. XRD studies confirm the presence of silicon nanocrystallites in the PS structure. By increasing the current density, the average estimated values of grain size are found to be decreased. SEM images indicate that the pores are surrounded by a thick columnar network of silicon walls. The observed PL spectra at room temperature for all the current densities confirm the formation of PS structures with nanocrystalline features. PL studies reveal that there is a prominent visible emission peak at 606 nm. The obtained variation of intensity in PL emission may be used for intensity varied light emitting diode applications. These studies confirm that the PS is a versatile material with potential for optoelectronics application.

Optical Studies of porous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
T. Lin ◽  
M. E. Sixta ◽  
J. N. Cox ◽  
M. E. Delaney
Keyword(s):  
Optical Properties ◽  
Fourier Transform ◽  
Steady State ◽  
Porous Silicon ◽  
Ftir Spectroscopy ◽  
Optical Studies ◽  
Etched Silicon ◽  
Bending Modes ◽  
P Type ◽  
Over Time

AbstractThe optical properties of both electrochemically anodized and chemically stain-etched porous silicon are presented. Fourier transform infrared (FTIR) spectroscopy showed that absorbance in stain-etched samples was 3x and 1.7x greater than in anodized samples for the SiH/SiH2 stretch and scissors-bending modes, respectively. Also, oxygen is detected in stain-etched samples immediately after formation, unlike anodized samples. Photoluminescence measurements showed different steady state characteristics. Electrochemical-etched silicon samples stored in air increased in photoluminescent intensity over time, unlike the stain-etched samples. A photoluminescent device made by anodization on epitaxial p-type material (0.4 Ωm) on n-type substrate (0.1 Ω-cm) did not exhibit electroluminescence.

Electroluminescence and Photoluminescence Properties of Porous Silicon Nanostructures with Optimum Current Density of Photo-Electrochemical Anodisation

2013 ◽  
Vol 667 ◽  
pp. 180-185
Author(s):  
M. Ain Zubaidah ◽  
F.S. Husairi ◽  
S.F.M. Yusop ◽  
Noor Asli Asnida ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Volume Ratio ◽  
Boron Doping ◽  
Peak Position ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Photoluminescence Properties ◽  
Current Densities ◽  
Pl Spectrum ◽  
P Type

P-type silicon wafer ( orientation; boron doping; 0.75 ~ 10 Ω cm-1) was used to prepare samples of porous silicon nanostructures (PSiNs). All samples have been prepared by using photo-electrochemical anodisation. A fixed etching time of 30 minutes and volume ratio of electrolyte, hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), 1:1 were used for various current densities, J. There were sample A (J=10 mA/cm2), sample B (J=20 mA/cm2), sample C (J=30 mA/cm2), sample D (J=40 mA/cm2) and sample E (J=50 mA/cm2). Photoluminescence (PL) and electroluminescence (EL) spectra were investigated. Maximum peak position of PL spectrum at about ~675 nm, while the maximum EL spectrum at about ~650 nm (which is similar to the PL spectrum).

Influence of Etching Time on Surface Structural Properties of p- and n- Type Porous Silicon Nanostructures by Photo-Electrochemical Anodic Etching

2012 ◽  
Vol 576 ◽  
pp. 511-515
Author(s):  
N.A. Asli ◽  
Maslihan Ain Zubaidah ◽  
S.F.M. Yusop ◽  
Khairunnadim Ahmad Sekak ◽  
Mohammad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Crystalline Silicon ◽  
Surface Characteristic ◽  
Electrochemical Anodization ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Force Microscopy ◽  
Etching Parameters ◽  
P Type ◽  
Substrate Doping

Porous silicon nanostructures (PSiN) are nanoporous materials which consist of uniform network of interconnected pore. The structure of PSiN is depending on etching parameters, including current density, HF electrolyte concentration, substrate doping type and level. In this work, the results of a structural p-type and n-type of porous silicon nanostructures were investigated by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) is reported. Samples were prepared by photo-electrochemical anodization of p- and n-type crystalline silicon in HF electrolyte at different etching time. The surface morphology of PSiN was studied by FESEM with same magnification shown n-type surface form crack faster than p-type of PSiN. While the topography and roughness of PSiN was characterize by AFM. From topography shown the different etching time for both type PSiN produce different porosity and roughness respectively. There is good agreement between p- and n-type have different in terms of surface characteristic.

Morphological, structural and optical properties of GaN grown on porous silicon/Si(100) substrate

2008 ◽  
Vol 62 (3) ◽  
pp. 515-519 ◽  
Author(s):  
A. Matoussi ◽  
F. Ben Nasr ◽  
R. Salh ◽  
T. Boufaden ◽  
S. Guermazi ◽  
...  
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Structural And Optical Properties
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