Accumulation of Defects in Austenitic Stainless Steels with Phosphorus and Titanium Additions upon Electron Irradiation at 573 К Investigated Using Positron Annihilation Spectroscopy

2019 ◽  
Vol 120 (3) ◽  
pp. 284-289
Author(s):  
D. A. Perminov ◽  
A. P. Druzhkov ◽  
N. L. Pecherkina ◽  
V. L. Arbuzov
Keyword(s):  
Positron Annihilation ◽  
Electron Irradiation ◽  
Stainless Steels ◽  
Austenitic Stainless Steels ◽  
Positron Annihilation Spectroscopy ◽  
Accumulation Of Defects

scholarly journals A positron annihilation study of defect accumulation in phosphorus- and titanium-alloyed austenitic stainless steels under electron irradiation at room temperature

2020 ◽  
pp. 27-34
Author(s):  
D. A. Perminov ◽  
Keyword(s):  
Positron Annihilation ◽  
Electron Irradiation ◽  
Stainless Steels ◽  
Room Temperature ◽  
Austenitic Stainless Steels ◽  
Positron Annihilation Spectroscopy ◽  
High Concentration ◽  
Noticeable Effect ◽  
Vacancy Defects ◽  
Positron Annihilation Study

The effect of phosphorus and titanium additions on the accumulation of vacancy defects in Cr16Ni15Mo3 austenitic stainless steels under electron irradiation at room temperature is studied by positron annihilation spectroscopy. It is shown that, at this temperature, phosphorus has no noticeable effect on the accumulation of vacancy defects. This is due to the low mobility of vacancies and the low concentration of impurities. Titanium, due to its high concentration, enhances the accumulation of vacancy defects during irradiation, but this effect is weak.

Electron irradiation damage in austenitic stainless steels

1991 ◽  
Vol 179-181 ◽  
pp. 526-528 ◽  
Author(s):  
Jiguang Sun ◽  
Jiapu Qian ◽  
Zhuoyong Zhao ◽  
Jiming Chen ◽  
Zengyu Xu
Keyword(s):  
Electron Irradiation ◽  
Stainless Steels ◽  
Austenitic Stainless Steels ◽  
Irradiation Damage

scholarly journals Vacancies in electron irradiated 6H silicon carbide studied by positron annihilation spectroscopy

2003 ◽  
Vol 792 ◽  
Author(s):  
C. H. Lam ◽  
C. C. Ling ◽  
C. D. Beling ◽  
S. Fung ◽  
H. M. Weng ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Positron Annihilation ◽  
Electron Irradiation ◽  
Room Temperature ◽  
Positron Lifetime ◽  
Positron Annihilation Spectroscopy ◽  
Isochronal Annealing ◽  
Positron Lifetime Spectroscopy ◽  
Irradiation Process ◽  
Positron Lifetime Measurement

ABSTRACTPositron lifetime spectroscopy was employed to study the as-electron-irradiated (10 MeV, 1×1018 cm-2) n-type 6H silicon carbide sample in the measuring temperature range of 15 K to 294 K. Isochronal annealing studies were also performed up to the temperature of 1373 K by carrying out the room temperature positron lifetime measurement. Negatively charged carbon vacancies and VCVSi divacancy were identified as the major vacancy type defects induced by the electron irradiation process. The concentration of the VCVSi divacancy was found to decrease dramatically after the 1973 K annealing.

Sign in / Sign up

Export Citation Format

Share Document