Synthesis and study of electrolytic materials with a high-energy defect structure and a developed surface

2016 ◽  
Vol 2016 (10) ◽  
pp. 924-929 ◽  
Author(s):  
N. N. Gryzunova ◽  
A. A. Vikarchuk ◽  
M. N. Tyur’kov
Keyword(s):  
Defect Structure ◽  
High Energy ◽  
Developed Surface

Structural and Chemical Properties of MBE Grown Niobium Overlayers on (110) Rutile

1996 ◽  
Vol 441 ◽  
Author(s):  
J. Marien ◽  
T. Wagner ◽  
M. Rühle
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Structure ◽  
Chemical Properties ◽  
High Energy ◽  
Initial Growth ◽  
High Energy Electron ◽  
Transmission Electron ◽  
Different Temperatures ◽  
And Chemical Properties

AbstractThin Nb films were grown by MBE in a UHV chamber at two different temperatures (50°C and 950°C) on the (110) surface of TiO2 (rutile).At a growth temperature of 50°C, reflection high energy electron diffraction (RHEED) revealed epitaxial growth of Nb on rutile: (110)[001] TiO2 ¦¦ (100)[001] Nb. In addition, investigations with Auger electron spectroscopy (AES) revealed that a chemical reaction took place between the Nb overlayer and the TiO2 substrate at the initial growth stage. A 2 nm thick reaction layer at the Nb/TiO2 interface has been identified by means of conventional transmission electron microscopy (CTEM) and high-resolution transmission electron microscopy (HRTEM).At a substrate temperature of 950°C, during growth, the Nb film was oxidized completely, and NbO2 grew epitaxially on TiO2. The structure and the chemical composition of the overlayers have been investigated by RHEED, AES, CTEM and HRTEM. Furthermore, it was determined that the reaction of Nb with TiO2 is governed by the defect structure of the TiO2 and the relative oxygen affinities of Nb and TiO2.

scholarly journals Modification of the structural and optical properties of commercial ZnO powder by mechanical activation

2006 ◽  
Vol 38 (2) ◽  
pp. 169-175 ◽  
Author(s):  
M. Scepanovic ◽  
T. Sreckovic ◽  
K. Vojisavljevic ◽  
M.M. Ristic
Keyword(s):  
Optical Properties ◽  
Mechanical Activation ◽  
Defect Structure ◽  
High Energy ◽  
Original Sample ◽  
Structural And Optical Properties ◽  
Zinc Oxide Powder ◽  
Raman Modes ◽  
Zno Crystal ◽  
Zno Powder

Mechanical activation was used as a method for modification of the structural and optical properties of commercial ZnO powder. For this purpose zinc oxide powder was mechanically treated by grinding in a high-energy vibro-mill in a continual regime in air up to 300 minutes. Starting and modified ZnO samples were characterized using XRD, BET and TEM measurements. Optical properties of these samples were investigated by Raman and photoluminescence (PL) spectroscopy. The color of commercial ZnO powder was white while mechanically activated ZnO powder was dark yellow, indicating the presence of nonstoichiometry. In the Raman spectra of non-activated sample Raman modes of bulk ZnO were observed, while the spectra of modified samples point out structural and stoichiometric changes. The PL spectra of modified samples excited by 325 and 442 nm lines of a He-Cd laser show great difference with respect to the spectra of the original sample. This study confirms that change in the defect structure of the ZnO crystal lattice introduced by mechanical activation affects the optical properties of this material.

Topology and Electronic Structure of Onion-Like Carbon and Graphite/Diamond Nanocomposites

2001 ◽  
Vol 703 ◽  
Author(s):  
Lyubov G. Bulusheva ◽  
Alexander V. Okotrub ◽  
Vladimir L. Kuznetsov ◽  
Andrew L. Chuvilin ◽  
Yuriy V. Butenko ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Quantum Chemical ◽  
Defect Structure ◽  
High Energy ◽  
Intermediate Annealing ◽  
Carbon Cage ◽  
X Ray ◽  
Annealing Temperatures ◽  
Carbon And Graphite ◽  
Energy Maximum

ABSTRACTAnnealing of nanodiamond at moderate temperature makes it possible to produce structures being intermediate in the carbon transformation from sp3- to sp2-state (graphite/diamond nanocomposites) and onion-like carbon (OLC). Electron microscopy shows such structures involve cage shells with spacing close to graphite. X-ray emission spectroscopy has been applied to examine the electronic structure of OLC and graphite/diamond nanocomposites. The CKα-spectra of OLC produced in the temperature range of 1600-1900 K were found to be markedly different from the spectrum of particles formed at 2140 K and characterized by better ordering of graphitic shells. The latter spectrum was shown to be very similar to the CKα-spectrum of polycrystalline graphite, while the former ones exhibited a significant increase of high-energy maximum that might be caused by the holed defect structure of graphitic networks forming at the intermediate annealing temperatures. To interpret experimental spectra, the quantum-chemical semiempirical AM1 calculation of icosahedral C540 cage and that with holed defects was carried out. The lack of at least 22% atoms in an internal carbon cage was found to be essential to provide an increase of density of high-energy electronic states similar to that observed in the spectrum of OLC produced at 1900 K.

Defect structure of high‐Tcsuperconductor by high‐energy heavy ion irradiation

2002 ◽  
Vol 51 (suppl 1) ◽  
pp. S235-S238 ◽  
Author(s):  
Masato Sasase ◽  
Satoru Okayasu ◽  
Hiroki Kurata ◽  
Kiichi Hojou
Keyword(s):  
Defect Structure ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
High Energy ◽  
Heavy Ion Irradiation

Reduction of Secondary Defects in High Energy O-Implanted Si by High Energy Si Irradiation

1992 ◽  
Vol 279 ◽  
Author(s):  
S. L. Ellingboe ◽  
M. C. Ridgway
Keyword(s):  
High Temperature ◽  
Defect Structure ◽  
Low Dose ◽  
Defect Formation ◽  
Volume Fraction ◽  
High Energy ◽  
High Dose ◽  
High Temperature Annealing ◽  
Before And After ◽  
Secondary Defect

ABSTRACTThe effect of 4.2 MeV, low dose Si irradiation before annealing of 1 MeV, high dose O-implanted Si has been studied. Si irradiation results in differences in the defect structure both before and after high temperature annealing. With no Si irradiation, annealing results in polycrystalline Si (polySi) formation and microtwinning at the front SiO2/Si interface. With Si irradiation, the polySi volume fraction is greatly reduced after annealing, twinned Si having grown in its place. Si irradiation has no effect on Si inclusions within the SiO2 layer. The dependence of secondary defect formation on Si dose and implant temperature is presented. In particular, Si irradiation at low implant temperatures (150°C) and moderate doses (5×1016 cm−2) is shown to be most effective in the reduction of the polySi volume fraction at the front SiO2/Si interface.

Dose and Doping Dependence of Damage Annealing in Fe Mev Implanted Inp

1995 ◽  
Vol 396 ◽  
Author(s):  
A. Carnera ◽  
B. Fraboni ◽  
A. Gasparotto ◽  
F. Priolo ◽  
A. Camporese ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Defect Structure ◽  
Damage Evolution ◽  
Rutherford Backscattering Spectrometry ◽  
High Energy ◽  
Primary Defect ◽  
Secondary Damage ◽  
Transmission Electron ◽  
Secondary Ions

AbstractHigh energy (2 MeV) ion implantation of Fe in InP has been investigated by means of Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM) and secondary ions mass spectrometry (SIMS). The implanted doses ranged between 5×l013 and 5×l014 at/cm2. Annealing in the 650–800 °C range was performed and the primary as well as secondary damage evolution has been studied. The correlations between defect structure and Fe redistribution properties have been carefully analysed. The results show the role of the primary defect structure in determining the annealing properties, both for damage recovery and Fe redistribution. The latter is also influenced by the doping of the substrate.

Defect Structure of High-Tc Superconductor by High-Energy Heavy Ion Irradiation

2000 ◽  
pp. 314-316 ◽  
Author(s):  
Masato Sasase ◽  
Takahiro Satou ◽  
Satoru Okayasu ◽  
Hiroki Kurata ◽  
Kiichi Hojou
Keyword(s):  
Defect Structure ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
High Energy ◽  
High Tc ◽  
High Tc Superconductor ◽  
Heavy Ion Irradiation

scholarly journals Electrophysical characteristics of the desalination plant based on the principle of capacitive deionization

2020 ◽  
Vol 64 (4) ◽  
pp. 447-457 ◽  
Author(s):  
A. S. Zhdanok ◽  
A. G. Charviak ◽  
Ya. A. Matveichyk ◽  
S. V. Shushkov
Keyword(s):  
High Energy ◽  
Operating Voltage ◽  
Capacitive Deionization ◽  
Technological Parameters ◽  
Reliable Operation ◽  
Term Operation ◽  
Desalination Plant ◽  
Developed Surface ◽  
Flow Through

The basic electrophysical and technological parameters of a CDI desalination plant designed for long-term operation, based on the principle of salt solution deionization on electrodes with a developed surface, have been studied. The proposed equipment for water demineralization uses a simplified design with pumping the solution through electrodes (“flow through electrodes”), which allows bypassing without relatively expensive ion-exchange membranes. Non-woven felt “Karbopon-V-Aktiv-200-65A” was used as the electrode material, the estimated value of the specific surface of the material of which, according to the results of measurements by the method with the deposition of acetone, amounted to ~ 1000 m2/g or more. Also, the advantages of the proposed CDI desalination plant are the absence of highly loaded power elements, the use of corrosion-resistant materials and the reliability of the electrode stacking scheme, which makes it possible to count on its long-term and reliable operation. Various possibilities of operational adjustment of the desalination plant modes are demonstrated – reduction of the discharge period due to the application of voltage pulses of reverse polarity, increasing efficiency by organizing a procedure for taking into account the real voltage at the working electrodes inside the CDI cell. The high-energy efficiency of demineralization is determined by the relatively low operating voltage of ~ 1 V. It is established that with increasing amperage, salt removal is more efficient, respectively, the degree of desalination is higher at a higher current: the working period of 30 minutes corresponds to the degree of desalination of ~ 20 % at a voltage of 1.4 V and ~ 30 % in the 1.6 V mode. The possibility of increasing the desalination capacity to ~ 100 g of salt over a half-hour period was noted. Possible ways to further improvement of the performance of the equipment presented in the article are identified.

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