Synthesis of Polymer-based ZnO/TiO2 Nanocomposites Flexible Sheets as High Dielectric Materials

2021 ◽  
Vol 63 (6) ◽  
pp. 879-890
Author(s):  
N. Kanwal ◽  
S. Pervaiz ◽  
A. Rasheed ◽  
M. Saleem ◽  
I. A. Khan
Keyword(s):  
Dielectric Materials ◽  
High Dielectric Materials ◽  
High Dielectric

Advances in Precursor Development for CVD of Bariumcontaining Materials

1993 ◽  
Vol 335 ◽  
Author(s):  
Brian A. Vaartstra ◽  
R. A. Gardiner ◽  
D. C. Gordon ◽  
R. L. Ostrander ◽  
A. L. Rheingold
Keyword(s):  
State Of The Art ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Barium Strontium ◽  
Barium Compounds ◽  
Recent Developments ◽  
Metal Organic ◽  
High Dielectric Materials ◽  
High Dielectric ◽  
Memory Applications

AbstractBarium titanate and barium-strontium titanate (BST) are high dielectric materials, likely to replace state-of-the-art capacitor materials for memory applications. Chemical Vapor Deposition (CVD) of these materials has been hampered, particularly by the lack of suitable precursors for barium. Although attempts to make volatile metal-organic barium compounds have met with some progress, a suitably stable, volatile barium source is still in demand. This paper will highlight recent developments at ATM, including syntheses and structures of polyamine and glycol ether adducts which have been designed to limit aggregation of barium diketonates, and stabilize the adducts with respect to ligand dissociation.

Electrode Structures for Integration of Ferroelectric or High Dielectric Constant Films in Semiconductor Devices

1998 ◽  
Vol 541 ◽  
Author(s):  
Alfred Grill
Keyword(s):  
Electrode Materials ◽  
High Dielectric Constant ◽  
Semiconductor Devices ◽  
Dielectric Materials ◽  
Ferroelectric Thin Films ◽  
Perovskite Materials ◽  
Perovskite Material ◽  
High Dielectric Materials ◽  
High Dielectric ◽  
Processing Steps

AbstractThe preparation of ferroelectric and high-dielectric perovskite materials, which is performed at high temperatures in oxidizing environments, imposes strong limitations on the choice of suitable electrode materials which can be used for integration of these materials with semiconductor devices. Because of the complex compositions of the perovskites and of some of the electrode materials the two can interact and result in the deterioration of the structures. The electrode materials have, therefore, to be used often in combination with suitable barriers which block diffusion of the elements of the perovskite and of the Si device and prevent interactions between the components. These requirements can result in complex, multilayered electrode/barrier structures that can affect the crystallization of the perovskite material and its electrical properties as well as the perovskite properties during subsequent processing steps (e.g. in forming gas anneals). The present paper will review the different electrode/barrier structures that have been proposed for integration of ferroelectric thin films with semiconductor devices and discuss their effects on the properties of ferroelectric and high-dielectric materials.

Effects of Calcination Temperature on the Phase Formation and Microstructure of Barium Zinc Tantalate

2010 ◽  
Vol 173 ◽  
pp. 61-66 ◽  
Author(s):  
Hidayani Jaafar ◽  
Zainal Arifin Ahmad ◽  
Mohd Fadzil Ain
Keyword(s):  
Phase Formation ◽  
Raw Materials ◽  
Dielectric Materials ◽  
Particle Sizes ◽  
Complex Perovskite ◽  
Pure Phase ◽  
Microwave Electronic ◽  
High Dielectric Materials ◽  
High Dielectric ◽  
Quality Factor Q

Nowadays, high dielectric materials are important materials in microwave electronic applications due to its properties that can provide high frequency range of an antenna. Barium Zinc Tantalate (BZT) is a complex perovskite structure that can produce high quality factor, Q. In this research, the effect of calcinations temperatures on phase formation, density and morphology of BZT powders were investigated. Based on the DTA result, the range of calcinations temperatures to be investigated were between 750°C to 1250°C. Results show that the maximum density of BZT occurred at 1150°C with 99.74% theoretical density. Samples calcined at below 1100°C still containing their raw materials such as BaCO3, ZnO and Ta2O5. The pure phase of BZT was formed at 1150°C when calcined for 1 hour. The lattice distortion of BZT increased when the calcinations temperature increased between 1000°C to 1150°C. The calcined powders show almost spherical morphology and agglomerated. The particle sizes of BZT increased from 0.716μm to 0.258μm when the temperature increased from 750°C to 1200°C.

Terahertz amplification in high-dielectric materials

2007 ◽  
pp. 802-804 ◽  
Author(s):  
Ka-Lo Yeh ◽  
Thomas Hornung ◽  
Joshua C. Vaughan ◽  
Keith A. Nelson
Keyword(s):  
Dielectric Materials ◽  
High Dielectric Materials ◽  
High Dielectric

Improvements in high-field localized MRS of the medial temporal lobe in humans using new deformable high-dielectric materials

2010 ◽  
Vol 24 (7) ◽  
pp. 873-879 ◽  
Author(s):  
J.E.M. Snaar ◽  
W.M. Teeuwisse ◽  
M.J. Versluis ◽  
M.A. van Buchem ◽  
H.E. Kan ◽  
...  
Keyword(s):  
Temporal Lobe ◽  
Medial Temporal Lobe ◽  
High Field ◽  
Dielectric Materials ◽  
High Dielectric Materials ◽  
High Dielectric

scholarly journals Dielectric, mechanical and thermal properties of all-organic PI/PSF composite films by in situ polymerization

e-Polymers ◽  
2020 ◽  
Vol 20 (1) ◽  
pp. 226-232 ◽  
Author(s):  
Peng Li ◽  
Jiajun Yu ◽  
Shaohua Jiang ◽  
Hong Fang ◽  
Kunming Liu ◽  
...  
Keyword(s):  
Thermal Properties ◽  
In Situ Polymerization ◽  
Composite Films ◽  
Dielectric Materials ◽  
Mechanical Analysis ◽  
Dielectric Measurement ◽  
Mechanical And Thermal Properties ◽  
High Dielectric Materials ◽  
High Dielectric

AbstractAll-organic high dielectric materials are highly required in the field of modern electronic industry and energy storage. In this work, all-organic polyimide/polysulfone composite films with different amounts of PSF (PI/PSF-X) were prepared by in situ polymerization followed by film casting and thermal treatment. The dielectric, mechanical and thermal properties of these PI/PSF-X composite films are characterized by dielectric measurement, tensile test, thermogravimetric analysis and dynamic mechanical analysis. The results suggest that the PI/PSF-X composite films have good dielectric properties, good mechanical properties and excellent thermal properties, which are suitable for applications in electronic devices in harsh environments, especially in high-temperature environments.

scholarly journals Modeling and Measurements of Novel Monolithic Filters

2008 ◽  
Vol 2008 ◽  
pp. 1-8
Author(s):  
Aly H. Aly ◽  
Badawy El-Sharawy ◽  
Adalbert Beyer
Keyword(s):  
Dielectric Constant ◽  
Quality Factor ◽  
Bandpass Filter ◽  
Narrow Band ◽  
Dielectric Materials ◽  
Ferroelectric Materials ◽  
Dielectric Substrates ◽  
High Dielectric Materials ◽  
High Dielectric ◽  
Multilayer Dielectric

This paper presents novel multilayer tuneable highQ-filters based on hairpin resonators including ferroelectric materials. This configuration allows the miniaturization of these filters to a size that makes them suitable for chip and package integration and narrow-band applications. The main focus was miniaturizing filters with coupled loops using multilayer dielectric substrates. A further goal was to increase the quality factor of these distributed filters by embedding high dielectric materials in a multilayer high- and low-k(dielectric constant) substrate that is supported by LTCC technology. An improved W-shape bandpass filter was proposed with a wide stopband and approximately 5% bandwidth.

Sign in / Sign up

Export Citation Format

Share Document