Study of Current Flow Mechanisms in a CdS/por-Si/p-Si Heterostructure

2018 ◽  
Vol 52 (7) ◽  
pp. 891-896
Author(s):  
V. V. Tregulov ◽  
V. G. Litvinov ◽  
A. V. Ermachikhin
Keyword(s):  
Author(s):  
В.В. Трегулов ◽  
В.Г. Литвинов ◽  
А.В. Ермачихин

AbstractThe temperature dependence of the forward and reverse portions of the current–voltage characteristic and the photovoltage spectrum of a CdS/ por -Si/ p -Si semiconductor heterostructure are studied. It is found that the current-flow mechanisms are controlled by generation–recombination processes in the spacecharge region of the por -Si/ p -Si heterojunction, carrier tunneling in the por -Si film, and the model of space-charge-limited currents. A simplified version of the energy-band diagram of the heterostructure under study is proposed.


2020 ◽  
Vol 1697 ◽  
pp. 012170
Author(s):  
M A Mintairov ◽  
V V Evstropov ◽  
S A Mintairov ◽  
M V Nakhimovich ◽  
M Z Shvarts ◽  
...  

2010 ◽  
Vol 44 (6) ◽  
pp. 745-751 ◽  
Author(s):  
A. E. Belyaev ◽  
N. S. Boltovets ◽  
S. A. Vitusevich ◽  
V. N. Ivanov ◽  
R. V. Konakova ◽  
...  

2016 ◽  
Vol 42 (11) ◽  
pp. 1107-1109
Author(s):  
O. S. Talarico ◽  
V. V. Tregulov ◽  
V. G. Litvinov ◽  
A. V. Ermachikhin

1993 ◽  
Vol 74 (9) ◽  
pp. 5569-5574 ◽  
Author(s):  
Wei‐Nan Jiang ◽  
Umesh K. Mishra
Keyword(s):  

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