scholarly journals Current flow mechanisms in p-i-n­ structures based on cadmium telluride

2002 ◽  
Vol 5 (1) ◽  
pp. 46-50 ◽  
Author(s):  
P.M. Gorley ◽  
Keyword(s):  
Cadmium Telluride ◽  
Current Flow ◽  
Flow Mechanisms

scholarly journals Исследование механизмов токопрохождения в гетероструктуре CdS/por-Si/p-Si

2018 ◽  
Vol 52 (7) ◽  
pp. 751
Author(s):  
В.В. Трегулов ◽  
В.Г. Литвинов ◽  
А.В. Ермачихин
Keyword(s):  
Current Flow ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
Current Voltage Characteristic ◽  
Semiconductor Heterostructure ◽  
Current Voltage ◽  
Recombination Processes ◽  
Flow Mechanisms ◽  
Carrier Tunneling ◽  
Space Charge Limited Currents

AbstractThe temperature dependence of the forward and reverse portions of the current–voltage characteristic and the photovoltage spectrum of a CdS/ por -Si/ p -Si semiconductor heterostructure are studied. It is found that the current-flow mechanisms are controlled by generation–recombination processes in the spacecharge region of the por -Si/ p -Si heterojunction, carrier tunneling in the por -Si film, and the model of space-charge-limited currents. A simplified version of the energy-band diagram of the heterostructure under study is proposed.

Ohmic and Rectifying Contacts on High Resistivity P-Type Cadmium Telluride

1982 ◽  
Vol 16 ◽  
Author(s):  
A. Musa ◽  
J.P. Ponpon ◽  
M. Hage-Ali
Keyword(s):  
Cadmium Telluride ◽  
Current Flow ◽  
Electrical Characterization ◽  
High Resistivity ◽  
Experimental Conditions ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Gold Contact ◽  
P Type ◽  
A Current

ABSTRACTOhmic and rectifying contacts on high resistivity etched P-type cadmium telluride have been studied in order to produce diode structures.For this,we have first investigated the properties of gold contacts obtained by chemical reactions of CdTe dippedin gold chloride.Both electrical characterization and structure have been analyzed as a function of the experimental conditions of the contact deposition.The results can be interpreted in terms of a current flow enhanced by tunnelling through the Au-CdTe junction and related to the structure of the interface a few tens of nanometer below the gold contact. In addition,several rectifying contacts have been investigated , in order to achieve a structure having low leakage current.

scholarly journals The GaAs laser photoconverter (λ 809 nm) current flow mechanisms at the temperature range of 100-420 K

2020 ◽  
Vol 1697 ◽  
pp. 012170
Author(s):  
M A Mintairov ◽  
V V Evstropov ◽  
S A Mintairov ◽  
M V Nakhimovich ◽  
M Z Shvarts ◽  
...  
Keyword(s):  
Current Flow ◽  
Temperature Range ◽  
Flow Mechanisms ◽  
Gaas Laser

Effect of microwave treatment on current flow mechanisms in Au-TiBx-Al-Ti-n+-n-n+-GaN-Al2O3 ohmic contacts

2010 ◽  
Vol 44 (6) ◽  
pp. 745-751 ◽  
Author(s):  
A. E. Belyaev ◽  
N. S. Boltovets ◽  
S. A. Vitusevich ◽  
V. N. Ivanov ◽  
R. V. Konakova ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Current Flow ◽  
Microwave Treatment ◽  
Flow Mechanisms

Study of Current Flow Mechanisms in a CdS/por-Si/p-Si Heterostructure

2018 ◽  
Vol 52 (7) ◽  
pp. 891-896
Author(s):  
V. V. Tregulov ◽  
V. G. Litvinov ◽  
A. V. Ermachikhin
Keyword(s):  
Current Flow ◽  
Flow Mechanisms

An investigation of current-flow mechanisms in thin rubrene wafers prepared by the vapor transport method

2016 ◽  
Vol 42 (11) ◽  
pp. 1107-1109
Author(s):  
O. S. Talarico ◽  
V. V. Tregulov ◽  
V. G. Litvinov ◽  
A. V. Ermachikhin
Keyword(s):  
Current Flow ◽  
Vapor Transport ◽  
Flow Mechanisms ◽  
Transport Method ◽  
Vapor Transport Method

Current flow mechanisms in GaAs planar‐doped‐barrier diodes with high built‐in fields

1993 ◽  
Vol 74 (9) ◽  
pp. 5569-5574 ◽  
Author(s):  
Wei‐Nan Jiang ◽  
Umesh K. Mishra
Keyword(s):  
Current Flow ◽  
Flow Mechanisms

Preparation of Thin Cadmium Telluride Samples for Electron Microscope Studies

1974 ◽  
Vol 32 ◽  
pp. 548-549
Author(s):  
T. J. Magee ◽  
J. Peng ◽  
J. Bean
Keyword(s):  
Electron Microscope ◽  
Sulfuric Acid ◽  
Solid State ◽  
Sample Preparation ◽  
Cadmium Telluride ◽  
Potassium Dichromate ◽  
Optical Components ◽  
The Past ◽  
Solid State Devices

Cadmium telluride has become increasingly important in a number of technological applications, particularly in the area of laser-optical components and solid state devices, Microstructural characterizations of the material have in the past been somewhat limited because of the lack of suitable sample preparation and thinning techniques. Utilizing a modified jet thinning apparatus and a potassium dichromate-sulfuric acid thinning solution, a procedure has now been developed for obtaining thin contamination-free samples for TEM examination.

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