scholarly journals Исследование механизмов токопрохождения в гетероструктуре CdS/por-Si/p-Si

2018 ◽  
Vol 52 (7) ◽  
pp. 751
Author(s):  
В.В. Трегулов ◽  
В.Г. Литвинов ◽  
А.В. Ермачихин
Keyword(s):  
Current Flow ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
Current Voltage Characteristic ◽  
Semiconductor Heterostructure ◽  
Current Voltage ◽  
Recombination Processes ◽  
Flow Mechanisms ◽  
Carrier Tunneling ◽  
Space Charge Limited Currents

AbstractThe temperature dependence of the forward and reverse portions of the current–voltage characteristic and the photovoltage spectrum of a CdS/ por -Si/ p -Si semiconductor heterostructure are studied. It is found that the current-flow mechanisms are controlled by generation–recombination processes in the spacecharge region of the por -Si/ p -Si heterojunction, carrier tunneling in the por -Si film, and the model of space-charge-limited currents. A simplified version of the energy-band diagram of the heterostructure under study is proposed.

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale

Nanoscale ◽  
2014 ◽  
Vol 6 (15) ◽  
pp. 8671-8680 ◽  
Author(s):  
Gabriele Fisichella ◽  
Giuseppe Greco ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo
Keyword(s):  
Energy Band ◽  
Energy Band Diagram ◽  
Current Transport ◽  
Band Diagram ◽  
Current Voltage ◽  
Local Current ◽  
Gan Heterostructure

Local current–voltage measurements by CAFM on AlGaN/GaN and Gr/AlGaN/GaN. Energy band diagram of the Gr/AlGaN/GaN heterostructure.

scholarly journals Особенности вольт-амперной характеристики микродисковых лазеров на основе квантовых ям-точек InGaAs/GaAs

2019 ◽  
Vol 45 (19) ◽  
pp. 37
Author(s):  
Ф.И. Зубов ◽  
Э.И. Моисеев ◽  
Г.О. Корнышов ◽  
Н.В. Крыжановская ◽  
Ю.М. Шерняков ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Current Flow ◽  
Effective Area ◽  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
Deep Etching ◽  
Current Voltage ◽  
Side Walls ◽  
The Way

Microlasers formed by deep etching with an active region based on arrays of InGaAs/GaAs quantum well-dots were studied. The way how the current-voltage characteristic changes with decreasing microlaser diameter indicates the formation of a nonconducting layer about 1.5 μm thick near the side walls, which leads to a decrease in the effective area of current flow

scholarly journals Механизм и закономерность снижения светового потока светодиодов на основе структур AlGaN/InGaN/GaN с квантовыми ямами при длительном протекании прямого тока различной плотности

2018 ◽  
Vol 52 (3) ◽  
pp. 378
Author(s):  
Ф.И. Маняхин
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Current Flow ◽  
Light Flux ◽  
Voltage Characteristic ◽  
Nonuniform Distribution ◽  
Hot Carriers ◽  
Current Voltage Characteristic ◽  
Light Emitting ◽  
Current Voltage

AbstractThe mechanism of the light-flux decrease in light-emitting diodes based on AlGaN/InGaN/GaN heterostructures with quantum holes is determined. The light-flux decrease is associated with point-defect generation in the heterostructure active region due to interaction of the semiconductor lattice with hot carriers formed in the mode of deviation of the current–voltage characteristic from the exponential one. An analytical expression for the light-flux decrease upon prolonged current flow, which is confirmed by experimental results, is derived. It is shown that the behavior of the dependence of the light flux on the lifetime is strongly affected by the nonuniform distribution of indium in quantum wells.

scholarly journals Формирование гетероперехода II типа в полупроводниковой структуре InAsSb/InAsSbP

2020 ◽  
Vol 62 (11) ◽  
pp. 1822
Author(s):  
В.В. Романов ◽  
Э.В. Иванов ◽  
К.Д. Моисеев
Keyword(s):  
Gas Phase ◽  
Forward Bias ◽  
Energy Band Diagram ◽  
Organometallic Compounds ◽  
Blue Shift ◽  
Type Ii ◽  
Band Diagram ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Main Emission Band

The results of studying the electroluminescent and current-voltage characteristics of the n-InAs/n-InAsSb/p-InAsSbP heterostructure grown by gas-phase epitaxy from organometallic compounds are presented. Intense electroluminescence was detected in the spectral range 0.23–0.29 eV at the temperature T = 77 K. The position of the maximum of the main emission band (h ~ 0.24 eV) showed a noticeable “blue” shift with increasing applied forward bias. Based on the performed studies, it was concluded that there is a staggered type II heterojunction at the InAs0.84Sb0.16/InAs0.32Sb0.28P0.40 heterointerface, which is confirmed by the results of the calculation of the energy band diagram.

scholarly journals Analytic theory for current-voltage characteristic of a nanowire radial p-i-n diode

2021 ◽  
Vol 24 (04) ◽  
pp. 419-424
Author(s):  
V.L. Borblik ◽  
Keyword(s):  
Current Density ◽  
Concentration Distribution ◽  
Current Flow ◽  
Diffusion Length ◽  
Voltage Characteristic ◽  
Analytic Theory ◽  
Current Voltage Characteristic ◽  
Forward Voltage ◽  
Current Voltage ◽  
Radial Thickness

In this article, process of current flow in a nanowire radial p-i-n diode has been considered in detail. It has been shown that cylindrical geometry of the structure gives rise to specific asymmetry of the concentration distribution for current carriers injected to the i-layer, which is opposite to asymmetry that is due to inequality of carriers’ mobilities. This specific asymmetry rises with bringing the i-layer nearer to the nanowire center. Together with that, decrease of the current density in a “long” p-i-n diode and its increase in a “short” p-i-n diode take place (at given forward voltage). And variation of radial thickness of the i-layer demonstrates maximums in the current density at the thickness close to the bipolar diffusion length.

Electroluminescence from ZnO/n+-Si Heterojunction

2007 ◽  
Vol 131-133 ◽  
pp. 625-628 ◽  
Author(s):  
Xiang Yang Ma ◽  
Pei Liang Chen ◽  
Dong Sheng Li ◽  
De Ren Yang
Keyword(s):  
Electron Concentration ◽  
Silicon Substrate ◽  
Forward Bias ◽  
Energy Band Diagram ◽  
Near Band Edge ◽  
Band Diagram ◽  
Zno Film ◽  
Si Substrate ◽  
Current Voltage ◽  
Current Voltage Characteristics

The ZnO/n+-Si heterojunction has been fabricated via depositing nominally undoped ZnO film by reactive sputtering on a heavily arsenic-doped (n+) silicon substrate. The sputtered ZnO film was n-type in conductivity with an electron concentration of 1.0×1018 cm-3. The current-voltage characteristics indicate that the ZnO/n+-Si heterojunction does not possess rectifying function. Under the forward bias with the negative voltage applied on the n+-Si substrate, the heterojunction emits ultraviolet and broad visible lights characteristics of near-band-edge and defect-related emissions of ZnO, respectively. The EL mechanism has been tentatively explained in terms of the energy-band diagram.

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