Influence of the magnetic field and measurement temperature on the shape of microphotoluminescence spectra of Eu-Doped InGaN/GaN quantum-well structures

2011 ◽  
Vol 53 (8) ◽  
pp. 1680-1688 ◽  
Author(s):  
M. M. Mezdrogina ◽  
E. S. Moskalenko ◽  
Yu. V. Kozhanova
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Quantum Well Structures ◽  
Measurement Temperature ◽  
The Magnetic Field

Theoretical Investigation of the Shubnikov-de Haas Magnetoresistance Oscillations in a Quantum well under the Influence of Confined Acoustic Phonons

2018 ◽  
Vol 783 ◽  
pp. 1-11
Author(s):  
Le Thai Hung ◽  
Pham Ngoc Thang ◽  
Nguyen Quang Bau
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Phonon Confinement ◽  
Acoustic Phonons ◽  
Magnetic Impedance ◽  
Magnetoresistance Oscillations ◽  
The Magnetic Field ◽  
Amplitude Decrease ◽  
Theoretical Results ◽  
Phonon Confinement Effect

The Shubnikov – de Haas magnetoresistance oscillations in the Quantum well (QW) under the influence of confined acoustic phonons, The theoretical results show that the conductivity tensor, the complex magnetic impedance of the magnetic field, the frequency, the amplitude of the laser radiation, the QW width, the temperature of the system and especially the quantum index m characterizes the confinement of the phonon. The amplitude of the oscillations of the Shubnikov-de Haas impedance decreases with the increase of the influence of the confined acoustic phonons. The results for bulk phonons in a QW could be achieved, when m goes to zero. We has been compared with other studies when perform the numerical calculations are also achieved for the GaAs/AlGaAs in the QW. Results show that The Shubnikov-de Haas magnetoresistance oscillations amplitude decrease when phonon confinement effect increasing and when width L of the QW increases to a certain value, The Shubnikov – de Haas magnetoresistance oscillations amplitude completely disappears can not be observed.

scholarly journals Квантовые осцилляции релаксации фотопроводимости в p-i-n-гетеродиодах GaAs/InAs/AlAs

2018 ◽  
Vol 52 (6) ◽  
pp. 591
Author(s):  
Ю.Н. Ханин ◽  
Е.Е. Вдовин
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Oscillation Amplitude ◽  
Light Flux ◽  
Quantum Oscillations ◽  
Ballistic Motion ◽  
The Common ◽  
Relaxation Curves ◽  
Relaxation Characteristics ◽  
The Magnetic Field

AbstractThe photoconductivity and its relaxation characteristics in tunneling p – i – n GaAs/AlAs heterostructures under pulsed illumination is studied. Quantum oscillations in the photoconductivity are detected depending on the bias voltage with the period independent of the light wavelength, as well as an oscillating component of the relaxation curves caused by modulation of the recombination rate at the edge of a triangular quantum well in the undoped i layer, as in the case of photoconductivity oscillations. The common nature of oscillations of the steady-state photoconductivity and relaxation curves under pulsed illumination is directly confirmed by the lack of an oscillating component in both types of dependences of some studied p–i–n heterostructures. Simultaneous suppression of the observed oscillations of dependences of both types as the temperature increases to 80 K also confirms the proposed mechanism of their formation. The dependences of these oscillations on the magnetic field and light flux power are studied. Oscillation-amplitude suppression in a magnetic field of ~2 T perpendicular to the current is caused by the effect of the Lorentz force on the ballistic motion of carriers in the triangular-quantum-well region.

The effect of nitrogen on the diamagnetic susceptibility of a donor in quantum well under the magnetic field

2010 ◽  
Vol 48 (3) ◽  
pp. 305-311 ◽  
Author(s):  
E. Kilicarslan ◽  
S. Şakiroglu ◽  
E. Kasapoglu ◽  
H. Sari ◽  
I. Sökmen
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Diamagnetic Susceptibility ◽  
The Magnetic Field

Electron Subband Levels of n-Type δ-Doped Quantum Wells under In-Plane Magnetic Fields

1997 ◽  
Vol 11 (09) ◽  
pp. 1195-1207
Author(s):  
E. K. Takahashi ◽  
A. T. Lino ◽  
L. M. R. Scolfaro
Keyword(s):  
Magnetic Field ◽  
Electronic Structure ◽  
Magnetic Fields ◽  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Electron Energy ◽  
Self Consistent ◽  
Plane Direction ◽  
The Magnetic Field

Self-consistent calculations of the electronic structure of center n-δ-doped GaAs/Al x Ga 1-x As quantum wells under in-plane magnetic fields are presented. The field B is varied up to 20 Tesla for different quantum well widths L w and sheet donor concentrations N D . The magnetic field produces noticeable changes in the energy dispersions along an in-plane direction perpendicular to B. The effects of B are more pronounced for higher electronic subbands. It is found that the diamagnetic shifts increase with increasing L w and/or N D . Contrarily to what has been observed in modulation-doped quantum wells, in these δ-doped systems the electron energy dispersions keep the single conduction band minimum at the center of the Brillouin zone even for intense magnetic fields.

Scattering Processes with the Emission of Longitudinal Optical Phonons in the Landau Level System In GaAs/AlGaAs Quantum Well

2021 ◽  
Author(s):  
Ngo Vinh Doan The ◽  
Trung Le Canh
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
Golden Rule ◽  
Longitudinal Optical ◽  
Optical Phonons ◽  
Scattering Rate ◽  
Quantizing Magnetic Field ◽  
Scattering Time ◽  
The Magnetic Field

Abstract The scattering processes of longitudinal optical phonons in GaAs/AlGaAs quantum wells in a quantizing magnetic field are considered. The time of intrasubband scattering between Landau levels is calculated by using Fermi's golden rule. The dependence of the scattering rate on the magnitude of the magnetic field has been shown and the magnetic field can suppress scattering processes on longitudinal optical phonons. It is found that the scattering time depends linearly on the width of the quantum well.

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