Statistical Model of Impurity Atoms Diffusion in the Crystal Lattice of Metals and Its Application for Calculating the Diffusion Coefficients of Hydrogen and Carbon Atoms in Iron

2021 ◽  
Vol 63 (3) ◽  
pp. 420-424
Author(s):  
S. V. Bobyr
2014 ◽  
Vol 53 (4S) ◽  
pp. 04ER02 ◽  
Author(s):  
Ning Zhang ◽  
Kotaro Nakamura ◽  
Masakazu Baba ◽  
Kaoru Toko ◽  
Takashi Suemasu

MRS Bulletin ◽  
2001 ◽  
Vol 26 (12) ◽  
pp. 1005-1008 ◽  
Author(s):  
Moonsub Shim ◽  
Congjun Wang ◽  
David J. Norris ◽  
Philippe Guyot-Sionnest

Modern semiconductor technology has been enabled by the ability to control the number of carriers (electrons and holes) that are available in the semiconductor crystal. This control has been achieved primarily with two methods: doping, which entails the introduction of impurity atoms that contribute additional carriers into the crystal lattice; and charging, which involves the use of applied electric fields to manipulate carrier densities near an interface or junction. By controlling the carriers with these methods, the electrical properties of the semiconductor can be precisely tailored for a particular application. Accordingly, doping and charging play a major role in most modern semiconductor devices.


1970 ◽  
Vol 48 (13) ◽  
pp. 1548-1552 ◽  
Author(s):  
C. T. Lai ◽  
H. M. Morrison

An electrolytic sectioning technique has been used to measure self-diffusion coefficients in silver single crystals in the temperature range 300–800 °C. The results are analyzed in terms of diffusion through the crystal lattice, enhanced by diffusion along dislocations.


2017 ◽  
Vol 114 (10) ◽  
pp. 2503-2508 ◽  
Author(s):  
Lauren M. Aycock ◽  
Hilary M. Hurst ◽  
Dmitry K. Efimkin ◽  
Dina Genkina ◽  
Hsin-I Lu ◽  
...  

We observed and controlled the Brownian motion of solitons. We launched solitonic excitations in highly elongatedRb87Bose–Einstein condensates (BECs) and showed that a dilute background of impurity atoms in a different internal state dramatically affects the soliton. With no impurities and in one dimension (1D), these solitons would have an infinite lifetime, a consequence of integrability. In our experiment, the added impurities scatter off the much larger soliton, contributing to its Brownian motion and decreasing its lifetime. We describe the soliton’s diffusive behavior using a quasi-1D scattering theory of impurity atoms interacting with a soliton, giving diffusion coefficients consistent with experiment.


2021 ◽  
Vol 24 (3) ◽  
pp. 255-260
Author(s):  
K.А. Ismailov ◽  
◽  
X.M. Iliev ◽  
M.O. Tursunov ◽  
B.K. Ismaylov ◽  
...  

Formation of complexes of impurity Mn atoms with impurity atoms of group VI elements (S, Se, Te) in the silicon crystal lattice has been studied. It has been experimentally found that formation of electrically neutral molecules with an ionic-covalent bond between Mn atoms and group VI elements takes place, which possibly leads to formation of new Si2BVI++Mn binary unit cells in the silicon crystal lattice. It has been shown that in the samples Si<S, Mn>, Si<Se, Mn> and Si<Te, Mn>, an intense complex formation occurs at the temperatures 1100, 820 and 650°C, respectively.


Crystals ◽  
2017 ◽  
Vol 7 (8) ◽  
pp. 237 ◽  
Author(s):  
Vladimir Nadolinny ◽  
Andrey Komarovskikh ◽  
Yuri Palyanov

1990 ◽  
Vol 187 ◽  
Author(s):  
H.-M. Wu ◽  
H. Hahn ◽  
R.S. Averback

AbstractTracer impurity diffusion coefficients for Co and Hf were measured in a series of amorphous NixZr(1−x) alloys in the range 0.30 < × < 0.70 and at temperatures between 250°C and 350° C. The diffusion coefficients for the Co atoms are between 2 and 4 orders of magnitude greater than those for Hf depending on alloy composition and temperature. Diffusion coefficients for Hf are independent of alloy composition, whereas those for Co decrease strongly with increasing Ni content. The activation enthalpies of diffusion and the pre-exponential factors were both found to be significantly smaller for the Hf than the Co tracer impurity atoms. These results are discussed in terms of possible diffusion mechanisms in amorphous metallic alloys.


2020 ◽  
Vol 62 (12) ◽  
pp. 930-935
Author(s):  
G. M. Poletaev ◽  
I. V. Zorya ◽  
R. Yu. Rakitin ◽  
M. D. Starostenkov

Effect of carbon and oxygen impurity atoms on diffusion along the tilt grain boundaries with <100> and <111> misorientation axis in metals with FCC lattice was studied by mean of molecular dynamics method. Ni, Ag, and Al were considered as metals. Interactions of metal atoms with each other were described by many-particle Clery-Rosato potentials constructed within the framework of tight binding model. To describe interactions of atoms of light elements impurities with metal atoms and atoms of impurities with each other, Morse pair potentials were used. According to obtained results, impurities in most cases lead to an increase in self-diffusion coefficient along the grain boundaries, which is caused by deformation of crystal lattice near the impurity atoms. Therefore, additional distortions and free volume are formed along the boundaries. It is more expressed for carbon impurities. Moreover, with an increase in concentration of carbon in the metal, an increase in coefficient of grain-boundary self-diffusion was observed first, and then a decrease followed. This behavior is explained by formation of aggregates of carbon atoms at grain boundary, which leads to partial blocking of the boundary. Oxygen atoms had smaller effect on diffusion along the grain boundaries, which is apparently explained by absence of a tendency to form aggregates and lesser deformation of crystal lattice around impurity. The greatest effect of impurities on self-diffusion along the grain boundaries among the examined metals was observed for nickel. Nickel has the smallest lattice parameter, impurity atoms deform its lattice around itself more than aluminum and silver, and therefore they create relatively more lattice distortions in it and additional free volume along the grain boundaries, which lead to an increase in diffusion permeability. Diffusion coefficients along the high-angle boundaries with misorientation angle of 30° turned out to be approximately two times higher than along low-angle boundaries with a misorientation angle of 7°. Diffusion along the <100> grain boundaries flowed more intensively than along the <111> boundaries.


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