Dislocation-enhanced diffusion in silver single crystals

1970 ◽  
Vol 48 (13) ◽  
pp. 1548-1552 ◽  
Author(s):  
C. T. Lai ◽  
H. M. Morrison
Keyword(s):  
Crystal Lattice ◽  
Single Crystals ◽  
Diffusion Coefficients ◽  
Enhanced Diffusion ◽  
Temperature Range ◽  
Self Diffusion

An electrolytic sectioning technique has been used to measure self-diffusion coefficients in silver single crystals in the temperature range 300–800 °C. The results are analyzed in terms of diffusion through the crystal lattice, enhanced by diffusion along dislocations.

Self-Diffusion in Gold

1971 ◽  
Vol 49 (21) ◽  
pp. 2704-2709 ◽  
Author(s):  
H. M. Morrison ◽  
Virginia L. S. Yuen
Keyword(s):  
High Temperature ◽  
Diffusion Coefficients ◽  
Temperature Behavior ◽  
Enhanced Diffusion ◽  
Temperature Range ◽  
High Temperature Behavior ◽  
Self Diffusion ◽  
Lower Temperature

An electrolytic sectioning technique has been used to measure self-diffusion coefficients for gold in the temperature range 360 to 740 °C. At 740 °C our value agrees with previous work at this temperature, while the lower temperature values are larger than predicted by extrapolation of the well-established high-temperature behavior. The results are interpreted in terms of dislocation enhanced diffusion.

scholarly journals Self Diffusion in Compressed Fluid CF3Brand CF3Cl

1989 ◽  
Vol 44 (12) ◽  
pp. 1210-1214 ◽  
Author(s):  
M. Has ◽  
H.-D. Lüdemann
Keyword(s):  
Diffusion Coefficients ◽  
Sphere Model ◽  
Temperature Range ◽  
Self Diffusion ◽  
Compressed Fluid

Abstract Self diffusion coefficients of CF3Br and CF3Cl are given for the temperature range 140 - 430 K at pressures up to 200 MPa. The are analysed by the interacting sphere model.

Diffusion of ion-implanted Boron and Silicon in Germanium

2004 ◽  
Vol 809 ◽  
Author(s):  
Suresh Uppal ◽  
A. F. W. Willoughby ◽  
J. M. Bonar ◽  
N. E. B. cowern ◽  
R. J. H. Morris ◽  
...  
Keyword(s):  
Activation Energy ◽  
High Resolution ◽  
Diffusion Coefficients ◽  
Doping Concentration ◽  
Diffusion Mechanism ◽  
Concentration Profiles ◽  
Furnace Annealing ◽  
Temperature Range ◽  
Self Diffusion ◽  
Secondary Ion

ABSTRACTThe diffusion of B and Si in Ge is studied using implantation doping. Concentration profiles after furnace annealing in the temperature range 800–900 °C were obtained using high resolution secondary ion mass spectroscopy (SIMS). Diffusion coefficients are calculated by fitting the annealed profiles. For B, we obtain diRusivity values which are two orders of magnitude slower than previously reported in literature. An activation energy of 4.65(±0.3) eV is calculated for B diffusion in Ge. The results suggest that diffusion mechanism other than vacancy should be considered for B diffusion in Ge. For Si diffusion in Ge, the diffusivity values calculated in the temperature range 750–875 °C are in agreement with previous work. The activation energy of 3.2(±0.3) eV for Si diffusion is closer to that for Ge self-diffusion which suggests that Si diffusion in Ge occurs via the same mechanism as in Ge self-diffusion.

Hydrogen Diffusion in Chalcopyrite Solar Cell Materials

1998 ◽  
Vol 513 ◽  
Author(s):  
A. Weidinger ◽  
J. Krauser ◽  
Th. Riedle ◽  
R. Klenk ◽  
M. Ch. Lux-Steiner ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Diffusion Coefficients ◽  
Transport Process ◽  
Hydrogen Diffusion ◽  
Intrinsic Diffusion ◽  
Ion Energy ◽  
Temperature Range

ABSTRACTHydrogen diffusion in CuInSe 2 single crystals and CuInS2 thin films was studied by measuring the spreading of implantation profiles upon annealing. Deep implantation with an ion energy of 10 keV and sub-surface implantation with 300 eV were applied. The diffusion coefficients in both materials were found to be in the order of 10-14 to 10-13 cm2/s in the temperature range between 400 and 520 K.These fairly low diffusivities are typical for a trap and release transport process rather than intrinsic diffusion of interstitial hydrogen. In the polycrystalline CuInS2 films, hydrogen leaves the sample through the grain boundaries.

Self-diffusion in gold single crystals at low temperatures

1968 ◽  
Vol 46 (23) ◽  
pp. 2589-2594 ◽  
Author(s):  
J. L. Whitton ◽  
G. V. Kidson
Keyword(s):  
Single Crystals ◽  
Diffusion Coefficients ◽  
Low Temperatures ◽  
Bulk Diffusion ◽  
Lattice Diffusion ◽  
Fast Diffusion ◽  
Initial Portion ◽  
Self Diffusion ◽  
Normal Lattice ◽  
Structure Sensitive

Self-diffusion in gold single crystals has been studied at temperatures between 335 to 390 °C for times between 15 and 30 min. The concentration profiles, obtained by use of a sensitive sectioning technique, consist of a region that appears to be characteristic of bulk diffusion, followed by a deeply penetrating 'tail' that is structure sensitive. Diffusion coefficients extracted from the initial portion of the curves are somewhat larger than those predicted from an extrapolation of high temperature measurements. The results are interpreted in terms of a combination of normal lattice diffusion and fast diffusion along dislocations.

Self-Diffusion in Tin Crystals

1950 ◽  
Vol 3 (1) ◽  
pp. 91 ◽  
Author(s):  
PJ Fensham
Keyword(s):  
Single Crystals ◽  
Diffusion Coefficients ◽  
Vacancy Mechanism ◽  
Self Diffusion ◽  
Active Isotope

The rate of self-diffusion in single crystals of white tin of various orientations has been measured using the radio-active isotope Sn113. The ratio of the diffusion coefficients parallel and perpendicular to the tetragonal (c) axis is approximately 2 at 180 �C. and approximately 3 at 223 �C. The diffusion coefficients in both directions at various temperatures are given by the Arrhenius expressions Dc= 1.2 x 10-5e-10,1500/RT cm.2sec.-1 and Da=3.7 X 10-8e-5,900/RT cm.2sec.-l. The anisotropy is discussed in terms of the vacancy mechanism of diffusion.

First Study of Iron Self-Diffusion in Fe2O3 Single Crystals by SIMS

2005 ◽  
Vol 237-240 ◽  
pp. 277-281 ◽  
Author(s):  
Antônio Claret Soares Sabioni ◽  
Antônio Márcio J.M. Daniel ◽  
W.A.A. Macedo ◽  
M.D. Martins ◽  
Anne Marie Huntz ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Stable Isotope ◽  
Single Crystals ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiling ◽  
Reliable Data ◽  
Oxygen Atmosphere ◽  
Self Diffusion ◽  
Secondary Ion

Iron bulk self-diffusion coefficients were measured in Fe2O3 single crystals using an original methodology based on the utilization of 57Fe stable isotope as iron tracer and depth profiling by secondary ion mass spectrometry (SIMS). The iron self-diffusion coefficients measured along c-axis direction, between 900 and 1100o C, in oxygen atmosphere, can be described by the following Arrhenius relationship: D(cm2/s)= 5.2x106 exp [-510 (kJ/mol)/RT], and are similar to reliable data available in the literature, obtained by means of radioactive techniques.

Interphase Boundary Diffusion in Eutectic Alloys

1985 ◽  
Vol 57 ◽  
Author(s):  
G. A. Chadwick
Keyword(s):  
Diffusion Coefficient ◽  
Single Crystal ◽  
Single Crystals ◽  
Interphase Boundary ◽  
Diffusion Coefficients ◽  
Noble Metals ◽  
Boundary Diffusion ◽  
Eutectic Alloys ◽  
Self Diffusion ◽  
Interphase Boundaries

AbstractTurnbull and co-workers have shown that the noble metals Cu, Ag, and Au diffuse into single crystals of Pb and Sn by an interstitialcy mechanism with measured diffusion coefficients of ∼10−6cm2s−1. These experiments have been extended to study the diffusion rates of the noble metals along the interphase boundaries of single crystal of Pb-Sn eutectic alloys and to measure the diffusion coefficient of silver along the interphase boundaries of Ag-Cu eutectic single crystals.The measured interphase boundary diffusion coefficients of the noble metals in the Pb-Sn single crystals are extremely high, being 2.6 × 10−3cm2s−1for Cu and ∼10−4cm2s−1for Ag and Au at room temperature. These results again imply an interstitialcy mechanism of diffusion at the interphase boundaries. In contrast, the diffusion coefficient of Ag110in a Ag-Cu eutectic single crystal worked out to be ∼8×10−9cm2s−1at 500°C, two orders of magnitude lower than the value obtained by Turnbull and Hoffman for self-diffusion along low-angle (8∼10°) boundaries in silver.

Bulk Diffusion of Homovalent Atomic Probes of Vanadium and Niobium in Single Crystals of Tungsten

2012 ◽  
Vol 330 ◽  
pp. 1-10 ◽  
Author(s):  
S.M. Klotsman ◽  
G.N. Tatarinova ◽  
Alexander N. Timofeev
Keyword(s):  
Single Crystals ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectrometry ◽  
Volume Diffusion ◽  
Bulk Diffusion ◽  
Self Diffusion ◽  
Arrhenius Dependence ◽  
The Difference ◽  
Defect Interactions ◽  
Secondary Ion

The Volume Diffusion of Homovalent Atomic Probes (APs) from the VB Group of the Periodic Ta-Ble of Elements (PTE) – V and Nb in W Single Crystals Has Been Studied by Using the Method of Secondary Ion Mass Spectrometry (SIMS). the Parameters of the Arrhenius Dependence of the Coefficients DV of Vanadium Volume Diffusion in W Have Been Measured: (D0)V = (1.3  0.4) X 10-4 M2s-1 and QV = (564 ± 6) Kj/mol. the Parameters (D0,Q)Nb of the Bulk Diffusion of Nb Aps in W Have Been Estimated with the Help of Several Measured Coefficients Dnb and the Empirical Correlation [1,2]: (D = DWW)(Tm)W: the Diffusion Coefficients of Substitutional Non-Magnetic 5d-Aps Coincide with the Self-Diffusion Coefficients in W at its Melting Point (Tm)W. the Enthalpies Qnb,Ta of the Bulk Diffusion of Non-Magnetic (nm) Homovalent Aps from the VB Group of PTE – Nb and Ta [3] Also Coincide with the Relaxation Volumes vacVBAPs of Complexes “vacancies-VB Aps” in the W Lattice. Electron Contributions (EDN)vacVBAPs to the Energies Evacvbaps of Interaction of Point Defects in Complexes “vacancies- VB Nm- Aps” Are Lower than in Complexes “vacancies-IVB Nm- Aps” [4]. the Dependence of {EDN(n)}vacVBAPs the Electron Contributions (EDN)vacVBAPs on the Difference of N Numbers of Periods of PTE the Deviation of Contributions (EDN)vacVAPs for Vanadium Aps to En-Ergies Evacvaps of their Interaction in Complexes “vacancy-VAP” Has Been Determined. this Devi-Ation Is Conditioned by the Contribution of the Exchange Energy (Eexch)VAP of Vanadium to the En-Ergy Evacvaps of the Point-Defect Interactions in the Complex “vacancy-VAP”.

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