Ranges of Hydrogen, Deuterium, and Helium Atoms in Amorphous Silicon and Tungsten

2020 ◽  
Vol 65 (1) ◽  
pp. 145-150
Author(s):  
D. S. Meluzova ◽  
P. Yu. Babenko ◽  
A. P. Shergin ◽  
A. N. Zinoviev
Keyword(s):  
Amorphous Silicon ◽  
Helium Atoms ◽  
Hydrogen Deuterium ◽  
And Tungsten

scholarly journals Interaction of plasma with beryllium

2021 ◽  
Vol 2064 (1) ◽  
pp. 012070
Author(s):  
I A Sokolov’ ◽  
M K Skakov ◽  
A Z Miniyazov ◽  
T R Tulenbergenov ◽  
G K Zhanbolatova
Keyword(s):  
Bulk Density ◽  
Pore Diameter ◽  
Density Increase ◽  
Plasma Parameters ◽  
Helium Atoms ◽  
Plasma Irradiation ◽  
Hydrogen Deuterium

Abstract In this work shows some results of studying the microstructure of HP-56 beryllium after plasma irradiation. The experiments revealed a change in the microstructure of beryllium after irradiation with hydrogen, deuterium and helium atoms. The pore diameter and their bulk density increase depending on the plasma parameters.

Amorphous Silicon and Tungsten Etching Employing Environmentally Benign Plasma Process

2001 ◽  
Vol 40 (Part 1, No. 2A) ◽  
pp. 832-836 ◽  
Author(s):  
Kazushi Fujita ◽  
Shigeto Kobayashi ◽  
Masafumi Ito ◽  
Masaru Hori ◽  
Toshio Goto
Keyword(s):  
Amorphous Silicon ◽  
Environmentally Benign ◽  
Plasma Process ◽  
And Tungsten

Anti-Reflection Coatings (Arc) for use with Aluminum Metallizations on GaAs ICs

1990 ◽  
Vol 181 ◽  
Author(s):  
Michael F. Brady ◽  
Aubrey L. Helms
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Nitrogen Content ◽  
Tungsten Silicide ◽  
Thickness Uniformity ◽  
New Class ◽  
Reducing Properties ◽  
And Tungsten

ABSTRACTThe need for an Anti-Reflection Coating (ARC) on aluminum metallizations is well known. A new class of materials based on tungsten-silicide and tungsten-silicon-nitride has been developed Tor use as an ARC. It has been shown that the reflectivity (relative to aluminum = 100%) can be decreased to −55% for the tungsten-silicide material and to −6% for the tungsten-silicon-nitride materials. These materials are easily etched in fluorine containing plasmas and are not as sensitive to thickness uniformity issues as dyed resists or amorphous silicon ARC materials. The option of leaving these ARC materials on the aluminum lines may lead to an increase in the electromigration resistance. The dependence of the reflectivity on nitrogen content has been investigated. Additionally, the reflectivity reducing properties have been studied on a variety of substrates such as aluminum, gold, tungsten, tantalum, and silicon.

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