Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal–insulator–semiconductor structures

2016 ◽  
Vol 42 (2) ◽  
pp. 138-142 ◽  
Author(s):  
S. V. Tikhov ◽  
O. N. Gorshkov ◽  
M. N. Koryazhkina ◽  
I. N. Antonov ◽  
A. P. Kasatkin
Keyword(s):  
Surface States ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
Minority Carriers

Interface properties of Si3N4/Si/n-GaAs metal-insulator-semiconductor structures grown on GaAs(111)B substrate

1996 ◽  
Vol 448 ◽  
Author(s):  
D.G. Park ◽  
D. M. Diatezua ◽  
Z. Chen ◽  
S. N. Mohammad ◽  
H. Morkoç
Keyword(s):  
Molecular Beam ◽  
Surface States ◽  
Chemical Vapor ◽  
Conduction Band Edge ◽  
Mis Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
Field Excursion

AbstractWe present characteristics of Al/Si3N4/Si/n-GaAs metal-insulator-semiconductor (MIS) interfaces grown on GaAs(111)B prepared with a combination of in situ molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) techniques . The density of the surface states in the high 1010 eV-1 cm-2 near the GaAs midgap for the GaAs grown at 575°C and 625°C was obtained. The MIS structure with GaAs homoepitaxial layer grown at 625°C, showing smoother surface morphology than the surface grown at 575 °C, exhibited small hysteresis which was as small as 30 mV under a field excursion of 1.5 MV/cm. The presence of a 1 MHz frequency response at 77 K suggests that the traps be within 60 meV of the conduction band edge of GaAs.

Influence of ultrashort pulses of electromagnetic radiation on parameters of metal-insulator-semiconductor structures

2004 ◽  
Vol 38 (12) ◽  
pp. 1390-1393
Author(s):  
V. A. Terekhov ◽  
A. N. Man’ko ◽  
E. N. Bormontov ◽  
V. N. Levchenko ◽  
S. Yu. Trebunskikh ◽  
...  
Keyword(s):  
Electromagnetic Radiation ◽  
Ultrashort Pulses ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures

The forming process in resistive-memory elements based on metal-insulator-semiconductor structures

2014 ◽  
Vol 40 (10) ◽  
pp. 837-840 ◽  
Author(s):  
S. V. Tikhov ◽  
O. N. Gorshkov ◽  
I. N. Antonov ◽  
A. P. Kasatkin ◽  
M. N. Koryazhkina
Keyword(s):  
Resistive Memory ◽  
Forming Process ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures

Casimir force pressure on the insulating layer in metal-insulator-semiconductor structures

2011 ◽  
Vol 53 (9) ◽  
pp. 1921-1926 ◽  
Author(s):  
G. L. Klimchitskaya ◽  
A. B. Fedortsov ◽  
Yu. V. Churkin ◽  
V. A. Yurova
Keyword(s):  
Casimir Force ◽  
Metal Insulator ◽  
Insulating Layer ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
Force Pressure

Field effect studies on p-type PbTe metal/insulator/semiconductor structures

1982 ◽  
Vol 92 (3) ◽  
pp. 295-301
Author(s):  
A.L. Dawar ◽  
O.P. Taneja ◽  
S.K. Paradkar ◽  
Partap Kumar ◽  
P.C. Mathur
Keyword(s):  
Field Effect ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
P Type
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