EFFECTS OF EXTERNAL AND INTERNAL ELECTRIC FIELDS ON THE BORON ACCEPTOR STATES IN SILICON

1967 ◽  
Vol 45 (8) ◽  
pp. 2695-2718 ◽  
Author(s):  
J. J. White
Keyword(s):  
Absorption Line ◽  
Excited States ◽  
Electric Fields ◽  
Stark Effect ◽  
Absorption Lines ◽  
Stark Broadening ◽  
Boron Doped ◽  
Stark Effects ◽  
Boron Acceptor ◽  
Neutral Acceptor

Effects of various electrical perturbations on the boron acceptor states in silicon were studied using low-temperature absorption-line measurements.A uniform external electric field was applied to compensated boron-doped silicon and the "Stark effect" on the boron acceptor absorption lines was observed. The Stark shifts of the excited states were quadratic in the applied field. The Stark broadening of the acceptor absorption lines was attributed to an unresolved partial removal of degeneracy of the excited states. The internal Coulomb fields of ionized impurities also perturb neutral acceptor transitions, resulting in (a) "ionized impurity broadening" of the absorption lines by the screened Coulomb fields of thermally ionized impurities in uncompensated Si(B) silicon at T > 50 °K and (b) "compensation effects" on the absorption lines by the unscreened Coulomb fields of compensationally ionized impurities in Si(B, P) silicon at 4 °K. Observations of these two internal Coulomb held effects are related to the external-field Stark effects. The theories of ionized impurity broadening are discussed briefly and the observed properties of a new absorption line due to compensation are reported.

ABSORPTION-LINE BROADENING IN BORON-DOPED SILICON

1967 ◽  
Vol 45 (8) ◽  
pp. 2797-2804 ◽  
Author(s):  
J. J. White
Keyword(s):  
Absorption Line ◽  
Excited States ◽  
Half Width ◽  
Line Broadening ◽  
Additional Information ◽  
Boron Doped ◽  
Doped Silicon ◽  
Time Part ◽  
Width Measurements ◽  
First Time

In boron-doped silicon, the excitation of bound holes from the acceptor ground state to the excited states leads to an infrared absorption-line spectrum. In a recent half-width study of the boron absorption lines, Colbow (1963) separated the various line-broadening contributions for the first time. Part of Colbow's half-widths is now found to be due to external strains introduced by the sample mounting. New half-width measurements of "strain-free" mounted boron-doped silicon are presented, Colbow's work is corrected, and additional information regarding the various broadening contributions is given.

Stark broadening of impurity absorption lines by inhomogeneous electric fields in highly compensated germanium

1996 ◽  
Vol 53 (24) ◽  
pp. 16272-16278 ◽  
Author(s):  
Y. Harada ◽  
K. Fujii ◽  
T. Ohyama ◽  
K. M. Itoh ◽  
E. E. Haller
Keyword(s):  
Electric Fields ◽  
Absorption Lines ◽  
Stark Broadening ◽  
Impurity Absorption

scholarly journals INFRARED ABSORPTION LINES IN BORON-DOPED SILICON

1963 ◽  
Vol 41 (11) ◽  
pp. 1801-1822 ◽  
Author(s):  
Konrad Colbow
Keyword(s):  
Experimental Data ◽  
Excited States ◽  
Ground State ◽  
Half Width ◽  
Stark Broadening ◽  
Boron Doped ◽  
Doped Silicon ◽  
Spectrometer Slit ◽  
Proper Allowance ◽  
Internal Strains

In boron-doped silicon, optical absorption takes place through the excitation of bound holes from the ground state to excited states. This leads to a line spectrum. Because of a lack of sufficient resolution and a failure to make proper allowance for line distortion by the finite spectrometer slit width, previous authors gave a misleading picture of the low-temperature half-width, the temperature dependence of this half-width, and the onset of concentration broadening at low temperatures.New experimental data are presented and explained by introducing the mechanism of statistical Stark broadening due to ionized impurities, and by modifying Baltensperger's (1953) theory for concentration broadening. At low impurity concentration the width is attributed to phonon broadening (Barrie and Nishikawa 1963) and internal strains (Kohn 1957).

TEMPERATURE DEPENDENCE OF ABSORPTION LINE WIDTH IN BORON-DOPED SILICON

1962 ◽  
Vol 40 (10) ◽  
pp. 1436-1442 ◽  
Author(s):  
Konrad Colbow ◽  
J. W. Bichard ◽  
J. C. Giles
Keyword(s):  
Low Temperature ◽  
Optical Absorption ◽  
Temperature Dependence ◽  
Absorption Line ◽  
Excited States ◽  
Half Width ◽  
Boron Doped ◽  
Doped Silicon ◽  
Spectrometer Slit ◽  
Proper Allowance

In boron-doped silicon, optical absorption takes place through the excitation of bound holes from the ground to excited states. This leads to a line spectrum. Due to a lack of sufficient resolution and a failure to make proper allowance for line distortion by the finite spectrometer slit width, previous authors gave incorrect values for both the low temperature half-width and the temperature dependence of this half-width. In re-evaluating these quantities, two of three previously known lines were found to be doublets. It is found that presently available theory does not explain the results adequately.

scholarly journals From the Vector to Scalar Perturbations Addition in the Stark Broadening Theory of Spectral Lines

Universe ◽  
2021 ◽  
Vol 7 (6) ◽  
pp. 176
Author(s):  
Valery Astapenko ◽  
Andrei Letunov ◽  
Valery Lisitsa
Keyword(s):  
Spectral Line ◽  
Stark Effect ◽  
Coulomb Field ◽  
Spectral Lines ◽  
Alternative Methods ◽  
Scalar Perturbation ◽  
Numerical Comparison ◽  
Line Shapes ◽  
Stark Effects ◽  
The Impact

The effect of plasma Coulomb microfied dynamics on spectral line shapes is under consideration. The analytical solution of the problem is unachievable with famous Chandrasekhar–Von-Neumann results up to the present time. The alternative methods are connected with modeling of a real ion Coulomb field dynamics by approximate models. One of the most accurate theories of ions dynamics effect on line shapes in plasmas is the Frequency Fluctuation Model (FFM) tested by the comparison with plasma microfield numerical simulations. The goal of the present paper is to make a detailed comparison of the FFM results with analytical ones for the linear and quadratic Stark effects in different limiting cases. The main problem is connected with perturbation additions laws known to be vector for small particle velocities (static line shapes) and scalar for large velocities (the impact limit). The general solutions for line shapes known in the frame of scalar perturbation additions are used to test the FFM procedure. The difference between “scalar” and “vector” models is demonstrated both for linear and quadratic Stark effects. It is shown that correct transition from static to impact limits for linear Stark-effect needs in account of the dependence of electric field jumping frequency in FFM on the field strengths. However, the constant jumping frequency is quite satisfactory for description of the quadratic Stark-effect. The detailed numerical comparison for spectral line shapes in the frame of both scalar and vector perturbation additions with and without jumping frequency field dependence for the linear and quadratic Stark effects is presented.

OPTICAL ABSORPTION SPECTRA OF ARSENIC AND PHOSPHORUS IN SILICON

1962 ◽  
Vol 40 (10) ◽  
pp. 1480-1489 ◽  
Author(s):  
J. W. Bichard ◽  
J. C. Giles
Keyword(s):  
Optical Absorption ◽  
Absorption Spectra ◽  
Excited States ◽  
Ground State ◽  
Absorption Lines ◽  
Full Width ◽  
Optical Absorption Spectra ◽  
Phosphorus Impurity ◽  
Line Widths ◽  
Phosphorus In Silicon

The optical absorption spectra of arsenic and phosphorus donor impurities in silicon have been studied under conditions of improved resolution. Absorption lines due to transitions from the impurity ground state to the excited states 2p0, 2p±, 3p0, 3p±, 4p0, 4 p±, and 5p0, and 5p± have been observed at 4.2° K. The relative intensities of some of these absorption lines are compared with existing experimental and theoretical estimates. The contribution of instrumental broadening to the observed line widths is assessed and natural line widths are estimated. The estimates indicate values for the natural line widths which are much less than those previously reported. For phosphorus impurity, the natural line widths are estimated to be less than 0.08 × 10−3 electron volts full width at half-maximum. The possibility of concentration broadening is discussed in connection with the arsenic data.

scholarly journals Piezoelectric Level Splitting in GaInN/GaN Quantum Wells

1999 ◽  
Vol 4 (S1) ◽  
pp. 357-362
Author(s):  
C. Wetzel ◽  
T. Takeuchi ◽  
H. Amano ◽  
I. Akasaki
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
High Performance ◽  
Stark Effect ◽  
Electronic Band Structure ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Large Set ◽  
Electronic Band ◽  
Level Splitting

Identification of the electronic band structure in AlInGaN heterostructures is the key issue in high performance light emitter and switching devices. In device-typical GaInN/GaN multiple quantum well samples in a large set of variable composition a clear correspondence of transitions in photo- and electroreflection, as well as photoluminescence is found. The effective band offset across the GaN/GaInN/GaN piezoelectric heterointerface is identified and electric fields from 0.23 - 0.90 MV/cm are directly derived. In the bias voltage dependence a level splitting within the well is observed accompanied by the quantum confined Stark effect. We furthermore find direct correspondence of luminescence bands with reflectance features. This indicates the dominating role of piezoelectric fields in the bandstructure of such typical strained layers.

Hyperfine Interaction, Zeeman and Stark Effects for Excited States in Rubidium

1976 ◽  
Vol 13 (6) ◽  
pp. 351-362 ◽  
Author(s):  
G Belin ◽  
L Holmgren ◽  
S Svanberg
Keyword(s):  
Hyperfine Interaction ◽  
Excited States ◽  
Stark Effects ◽  
Zeeman And Stark Effects

Measuring Electric Fields in Biological Matter Using the Vibrational Stark Effect of Nitrile Probes

2018 ◽  
Vol 69 (1) ◽  
pp. 253-271 ◽  
Author(s):  
Joshua D. Slocum ◽  
Lauren J. Webb
Keyword(s):  
Electric Fields ◽  
Stark Effect ◽  
Biological Matter

scholarly journals The interstellar medium of the Magellanic Clouds from absorption lines

1991 ◽  
Vol 148 ◽  
pp. 401-406 ◽  
Author(s):  
Klaas S. De Boer
Keyword(s):  
Interstellar Medium ◽  
Absorption Line ◽  
Milky Way ◽  
Large Magellanic Cloud ◽  
Magellanic Cloud ◽  
Magellanic Clouds ◽  
Absorption Lines ◽  
Small Magellanic Cloud ◽  
General Aspects

General aspects of ISM studies using absorption line studies are given and available data are reviewed. Topics are: galactic foreground gas, individual fields in the Magellanic Clouds (MCs) and MC coronae. Overall investigations are discussed. It is demonstrated that the metals in the gas of the Large Magellanic Cloud (LMC) and Small Magellanic Cloud (SMC) are a factor of 3 and 10, respectively, in abundance below solar levels. The depletion pattern in the LMC is similar to that of the Milky Way.

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