Conduction Electron Contributions to the Crystalline Electric Fields in Transition Metals

1974 ◽  
Vol 52 (11) ◽  
pp. 985-988 ◽  
Author(s):  
A. Ludwig ◽  
R. A. B. Devine
Keyword(s):  
Rare Earth ◽  
Transition Metals ◽  
Noble Metal ◽  
Electric Fields ◽  
Conduction Electron ◽  
Point Charge ◽  
Rare Earth Ions ◽  
Negative Point ◽  
Tentative Explanation ◽  
Crystalline Electric Fields

We discuss the origin of the crystalline electric fields for rare earth ions in transition and noble metal hosts, in terms of the band character of the host material and of localization and delocalization of 5d electrons on the rare earth ions. A tentative explanation is given for the almost pure negative point charge character found in Pd and Pt.

Room temperature p-orbital magnetism in carbon chains and the role of group IV, V, VI, and VII dopants

Nanoscale ◽  
2018 ◽  
Vol 10 (23) ◽  
pp. 11186-11195 ◽  
Author(s):  
C. H. Wong ◽  
E. A. Buntov ◽  
A. F. Zatsepin ◽  
J. Lyu ◽  
R. Lortz ◽  
...  
Keyword(s):  
Rare Earth ◽  
Transition Metals ◽  
Room Temperature ◽  
Group Iv ◽  
Rare Earth Ions ◽  
Next Generation ◽  
Spintronic Devices ◽  
Carbon Chains ◽  
Orbital Magnetism

The study of magnetism without the involvement of transition metals or rare earth ions is considered the key to the fabrication of next-generation spintronic devices.

TRANSPORT PROPERTIES OF THE RARE EARTH DISORDERED SYSTEMS (R1−xYbx)Ba2Cu3O7 (R = Y, Sm)

1988 ◽  
Vol 02 (06) ◽  
pp. 1395-1398
Author(s):  
J. R. HWANG ◽  
M. F. TAI ◽  
H. C. KU ◽  
W. N. WANG ◽  
K. H. LII
Keyword(s):  
Electrical Resistivity ◽  
Rare Earth ◽  
Conduction Electron ◽  
Disordered Systems ◽  
Magnetic Measurements ◽  
Mass Difference ◽  
Rare Earth Ions ◽  
Size Difference ◽  
Compositional Variation ◽  
The Rare Earth

Electrical and magnetic measurements have been carried out for the rare earth disordered superconducting copper oxide systems ( Y 1−x Yb x) Ba 2 Cu 3 O 7 (substitution with large rare earth mass difference) and ( Sm 1−x Yb x) Ba 2 Cu 3 O 7 (substitution with large rare earth ionic size difference). Effect of compositional variation upon room temperature electrical resistivity shows no disorder scattering contribution from the randomly distributed rare earth ions located on the (1/2, 1/2, 1/2) site of the space group Pmmm. This result indicates very low conduction electron density of states surrounding rare earth ions. On the contrary, negative deviation of electrical resistivity from the linear Vegard law was observed. This reduced conduction electron scattering was discussed through the variation of packing density, grain size and/or twin structure.

Efficient separation of transition metals from rare earths by an undiluted phosphonium thiocyanate ionic liquid

2016 ◽  
Vol 18 (23) ◽  
pp. 16039-16045 ◽  
Author(s):  
Alok Rout ◽  
Koen Binnemans
Keyword(s):  
Ionic Liquid ◽  
Rare Earth ◽  
Transition Metal ◽  
Transition Metals ◽  
Metal Ions ◽  
Rare Earths ◽  
Transition Metal Ions ◽  
Rare Earth Ions ◽  
Efficient Separation

Efficient separation of transition metal ions from their mixture with rare-earth ions was achieved by extraction with a phosphonium thiocyanate ionic liquid.

Ion Implanted Er and Tb in SiO2 for Electroluminescence in MOS Diodes

2000 ◽  
Vol 647 ◽  
Author(s):  
Ch. Buchal ◽  
S. Coffa ◽  
S. Wang ◽  
R. Carius
Keyword(s):  
Rare Earth ◽  
Electric Fields ◽  
Room Temperature ◽  
Rare Earth Ions ◽  
Oxide Semiconductor ◽  
Impact Excitation ◽  
Hot Electron ◽  
Experimental Proof ◽  
Light Generation ◽  
Mos Structures

AbstractEfficient infra-red and visible electroluminescence(EL) has been obtained from implanted rare earth ions in the SiO2 of a silicon-metal-oxide-semiconductor (MOS) diode structure at room temperature. The rare earth ions are excited by the direct impact of hot electrons tunneling through the oxide at electric fields larger than 6 MV/cm. The internal quantum efficiencies of Er and Tb implanted MOS diodes are estimated to be 10 % and 3 %, respectively. The hgh quantum efficiency is due to the high impact excitation cross-section of more than 10− 15cm2. These observations on MOS structures are an experimental proof for efficient light generation by hot electron impact.

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