Ion Implanted Er and Tb in SiO2 for Electroluminescence in MOS Diodes

2000 ◽  
Vol 647 ◽  
Author(s):  
Ch. Buchal ◽  
S. Coffa ◽  
S. Wang ◽  
R. Carius
Keyword(s):  
Rare Earth ◽  
Electric Fields ◽  
Room Temperature ◽  
Rare Earth Ions ◽  
Oxide Semiconductor ◽  
Impact Excitation ◽  
Hot Electron ◽  
Experimental Proof ◽  
Light Generation ◽  
Mos Structures

AbstractEfficient infra-red and visible electroluminescence(EL) has been obtained from implanted rare earth ions in the SiO2 of a silicon-metal-oxide-semiconductor (MOS) diode structure at room temperature. The rare earth ions are excited by the direct impact of hot electrons tunneling through the oxide at electric fields larger than 6 MV/cm. The internal quantum efficiencies of Er and Tb implanted MOS diodes are estimated to be 10 % and 3 %, respectively. The hgh quantum efficiency is due to the high impact excitation cross-section of more than 10− 15cm2. These observations on MOS structures are an experimental proof for efficient light generation by hot electron impact.

MOS Light Emitting Devices Based on Rare-Earth Ion Implantation

2008 ◽  
Vol 590 ◽  
pp. 117-138 ◽  
Author(s):  
L. Rebohle ◽  
Wolfgang Skorupa
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Indium Tin Oxide ◽  
Power Efficiency ◽  
Light Emission ◽  
Rare Earth Ions ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Hot Electron ◽  
Rare Earth Ion

In this article we will give an overview of our work devoted to Si-based light emission which was done in the last years. Si-based light emitters were fabricated by ion implantation of rare earth elements into the oxide layer of a conventional MOS structure. Efficient electroluminescence was obtained for the wavelength range from UV to the visible by using a transparent top electrode made of indium-tin oxide. In the case of Tb-implantation the best devices reach an external quantum efficiency of 16 % which corresponds to a power efficiency in the order of 0.3 %. The properties of the microstructure, the IV characteristics and the electroluminescence spectra were evaluated. The electroluminescence was found to be caused by hot electron impact excitation of rare earth ions, and the electric phenomena of charge transport, luminescence centre excitation, quenching and degradation are explained in detail.

Investigation of the Temperature Degradation and Re-Activation of the Luminescent Centres in Rare Earth Implanted SiO2 Layers

2007 ◽  
Vol 131-133 ◽  
pp. 595-600
Author(s):  
S. Prucnal ◽  
L. Rebohle ◽  
Wolfgang Skorupa
Keyword(s):  
Rare Earth ◽  
Light Emitting Diode ◽  
Operating Time ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Hot Electron ◽  
Light Emitting ◽  
Hot Electron Injection ◽  
Quenching Process ◽  
Quenching Mechanisms

The temperature quenching mechanisms of the electroluminescence (EL) and the reactivation of the rare earth luminescent centres by the flash lamp annealing (FLA) made after hot electron injection into the SiO2 layer implanted by Tb and Gd was investigated. An increase of the temperature from room temperature up to 150oC reduces the gate voltage of about 3 V and increases the rate of the EL quenching process and the degradation of the Metal-Oxide-Silicon Light Emitting Diode (MOSLED) structure by a of factor of three. On the other hand, the post-injection FLA reactivates the RE centres switched off by electrons trapped around them during hot electron impact excitation, increasing the operating time of the MOSLEDs devices.

Conduction Electron Contributions to the Crystalline Electric Fields in Transition Metals

1974 ◽  
Vol 52 (11) ◽  
pp. 985-988 ◽  
Author(s):  
A. Ludwig ◽  
R. A. B. Devine
Keyword(s):  
Rare Earth ◽  
Transition Metals ◽  
Noble Metal ◽  
Electric Fields ◽  
Conduction Electron ◽  
Point Charge ◽  
Rare Earth Ions ◽  
Negative Point ◽  
Tentative Explanation ◽  
Crystalline Electric Fields

We discuss the origin of the crystalline electric fields for rare earth ions in transition and noble metal hosts, in terms of the band character of the host material and of localization and delocalization of 5d electrons on the rare earth ions. A tentative explanation is given for the almost pure negative point charge character found in Pd and Pt.

Room temperature p-orbital magnetism in carbon chains and the role of group IV, V, VI, and VII dopants

Nanoscale ◽  
2018 ◽  
Vol 10 (23) ◽  
pp. 11186-11195 ◽  
Author(s):  
C. H. Wong ◽  
E. A. Buntov ◽  
A. F. Zatsepin ◽  
J. Lyu ◽  
R. Lortz ◽  
...  
Keyword(s):  
Rare Earth ◽  
Transition Metals ◽  
Room Temperature ◽  
Group Iv ◽  
Rare Earth Ions ◽  
Next Generation ◽  
Spintronic Devices ◽  
Carbon Chains ◽  
Orbital Magnetism

The study of magnetism without the involvement of transition metals or rare earth ions is considered the key to the fabrication of next-generation spintronic devices.

Electronic Mechanisms of Excitation of Rare-Earth Luminescence in Silicon

1991 ◽  
Vol 256 ◽  
Author(s):  
I. N. Yassievich
Keyword(s):  
Rare Earth ◽  
Electronic Excitation ◽  
Electron System ◽  
Rare Earth Ions ◽  
Impact Excitation

ABSTRACTTwo ways of electronic excitation for f-electron system of rare-earth ions in silicon are considered: impact excitation and Auger excitation. The probabilities of these processes are calculated.

Investigations on the Rare Earth Terpyridyl System

1965 ◽  
Vol 20 (6) ◽  
pp. 835-837 ◽  
Author(s):  
Shyama P. Sinha
Keyword(s):  
Rare Earth ◽  
Room Temperature ◽  
Free Ligand ◽  
Ground Level ◽  
Phosphorescence Spectrum ◽  
Rare Earth Ions ◽  
Luminescence Spectra ◽  
Heterocyclic Ligands ◽  
Phosphorescence Lifetime ◽  
Room Temperature Luminescence

The room temperature luminescence spectra of the monoterpyridyl chelates of trivalent samarium, dysprosium and thulium have been studied in solid state by exciting with monochromatic radiation of 3200 Å. The spectra of these chelates show intra f → f fluorescent transitions of the chelated rare earth ions as well as the molecular band fluorescence. The “bottleneck” nature of the energy transfer from the nitrogen containing heterocyclic ligands to the coordinated rare earth ions is proposed. The fluorescence data of mono-terpyridyl chelates have been compared with those of bis-dipyridyl one.The phosphorescence spectrum of terpyridyl has also been investigated. The lowest triplet state of the free ligand is found at 22 940 cm-1 above the ground level. The phosphorescence lifetime of terpyridyl is about 2 sec

Room-temperature luminescence from rare-earth ions implanted into Si nanocrystals

2000 ◽  
Vol 80 (4) ◽  
pp. 719-728 ◽  
Author(s):  
Giorgia Franzó ◽  
Vincenzo Vinciguerra ◽  
Francesco Priolo
Keyword(s):  
Rare Earth ◽  
Room Temperature ◽  
Rare Earth Ions ◽  
Si Nanocrystals ◽  
Room Temperature Luminescence

Electrical Characterization of High-k Dielectrics by Means of Flat-Band Voltage Transient Recording

2007 ◽  
Vol 996 ◽  
Author(s):  
Salvador Duenas ◽  
Helena Castán ◽  
Héctor García ◽  
Luis Bailón ◽  
Kaupo Kukli ◽  
...  
Keyword(s):  
Electric Fields ◽  
Electrical Characterization ◽  
Charge Trapping ◽  
Atomic Layer ◽  
Localized States ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Flat Band Voltage ◽  
High K ◽  
Mos Structures

AbstractWe have carried out a comparison between flat-band transients displayed in metal-oxide-semiconductor (MOS) structures fabricated on several atomic layer deposited (ALD) high-k dielectric films: HfO2, ZrO2, Al2O3, Ta2O5, TiO2, and Gd2O3. The gate voltage as a function of time is recorded while keeping constant the capacitance at the initial flat band condition (CFB). Since samples are in darkness, under no electric fields and no charge-injection conditions, transients must be due to charge trapping of localized states produced by electrons (holes) coming from the semiconductor by tunnelling. The process is assisted by phonons and it is therefore thermally activated. The temperature-transient amplitude relation follows an Arrhenius plot which provides the thermal activation energy of soft-optical phonons. Finally, we describe the dependencies of the flat-band voltage on the setup bias history (accumulation or inversion) and the hysteresis sign (clockwise or counter-clockwise) of the capacitance-voltage (C-V) characteristics of MOS structures.

Rare-Earth-doped Laser Materials: Spectroscopy and Laser Properties

2012 ◽  
Vol 1471 ◽  
Author(s):  
Larry D. Merkle
Keyword(s):  
Rare Earth ◽  
Room Temperature ◽  
Liquid Nitrogen Temperature ◽  
Spectroscopic Properties ◽  
Rare Earth Ions ◽  
Laser Materials ◽  
Army Research Laboratory ◽  
Trivalent Rare Earth ◽  
Heavily Doped ◽  
Rare Earth Doped

ABSTRACTTrivalent rare earth ions in crystalline or fiber hosts are among the most successful of laser materials, but new dopant-host combinations and more detailed understanding of existing materials continue to be needed. This paper presents a few examples from the work of our team at the Army Research Laboratory, highlighting the interrelation between spectroscopic properties and laser behavior. It focuses on bulk solids, though rare-earth-doped fiber lasers are also extremely important. One system discussed is Nd:YAG, particularly concentration quenching in heavily doped ceramic YAG. Spectroscopic properties of Yb:Y2O3 and Yb:Sc2O3 help to elucidate their laser performance. Spectra indicate that Er:YAG is more promising than Er:Sc2O3 for room temperature laser operation, but that the reverse is true for operation at and somewhat above liquid nitrogen temperature.

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