scholarly journals Pulse-shape calculations and applications using the AGATAGeFEM software package

2021 ◽  
Vol 57 (6) ◽  
Author(s):  
J. Ljungvall
Keyword(s):  
Charge Carrier ◽  
Data Base ◽  
Software Package ◽  
Pulse Shape ◽  
Carrier Transport ◽  
Minor Importance ◽  
Position Resolution ◽  
Numerical Studies ◽  
Detector Geometry ◽  
The Impact

AbstractA software package for modeling segmented High-Purity Segmented Germanium detectors, AGATAGeFEM, is presented. The choices made for geometry implementation and the calculations of the electric and weighting fields are discussed and models used for charge-carrier velocities are described. Numerical integration of the charge-carrier transport equation is explained. The impact of noise and crosstalk on the achieved position resolution in AGATA detectors is investigated. The results suggest that crosstalk, as seen in the AGATA detectors, is of minor importance for the position resolution. The sensitivity of the pulse shapes to the parameters in the pulse-shape calculations is determined as a function of position in the detectors. Finally, AGATAGeFEM has been used to produce pulse-shape data bases for pulse-shape analyses of experimental data. The results with the new data base indicate improvement with respect to those with the standard AGATA data base. The AGATAGeFEM package sets itself apart with its high precision of the detector geometry description. This lends itself to numerical studies of the impact of segmentation lines and charge diffusion in the next step of code development.

The Impact of the Dielectric/Semiconductor Interface on Microstructure and Charge Carrier Transport in High-Performance Polythiophene Transistors

2019 ◽  
Vol 13 (2) ◽  
pp. 113-122 ◽  
Author(s):  
Youngsuk Jung ◽  
R. Joseph Kline ◽  
Eric K. Lin ◽  
Daniel A. Fischer ◽  
Michael F. Toney ◽  
...  
Keyword(s):  
Charge Carrier ◽  
High Performance ◽  
Carrier Transport ◽  
Charge Carrier Transport ◽  
Semiconductor Interface ◽  
The Impact

scholarly journals Charge carrier transport and recombination in disordered materials

2016 ◽  
Vol 56 (3) ◽  
pp. 182-189 ◽  
Author(s):  
Gytis Juška ◽  
Kęstutis Arlauskas ◽  
Kristijonas Genevičius
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Bulk Heterojunction ◽  
Charge Carrier Mobility ◽  
Thin Layers ◽  
Charge Carriers ◽  
Disordered Materials ◽  
Charge Carrier Transport ◽  
Bulk Heterojunctions ◽  
The Impact

In this brief review the methods for investigation of charge carrier transport and recombination in thin layers of disordered materials and the obtained results are discussed. The method of charge carrier extraction by linearly increasing voltage (CELIV) is useful for the determination of mobility, bulk conductivity and density of equilibrium charge carriers. The extraction of photogenerated charge carriers (photo-CELIV) allows one to independently investigate relaxation of both the mobility and density of photogenerated charge carriers. The extraction of injected charge carriers (i-CELIV) is effective for the independent investigation of transport peculiarities of both injected holes and electrons in bulk heterojunctions. For the investigation of charge carrier recombination we proposed integral time-of-flight (TOF) and double-injection (DI) current transient methods. The methods allowed us to obtain the following significant results: to determine the reason of the conductivity dependence on electric field strength and temperature in the amorphous and microcrystalline hydrogenated silicon and π-conjugated polymers, the time dependent Langevin recombination, the impact of morphology on charge carrier mobility, the reason of reduced Langevin recombination in RR-PHT (regioregular poly(3-hexylthiophene))/PCBM (1-(3-methoxycarbonyl)propyl-1phenyl-[6,6]-methanofullerene) bulk heterojunction structures – 2D Langevin recombination; and to evaluate that the mobility of holes is predetermined by off-diagonal dispersion in poly-PbO.

Marginal solvents preferentially improve the molecular order of thin polythiophene films

RSC Advances ◽  
2016 ◽  
Vol 6 (28) ◽  
pp. 23640-23644 ◽  
Author(s):  
Shinae Kim ◽  
Wi Hyoung Lee ◽  
Junyoung Mun ◽  
Hwa Sung Lee ◽  
Yeong Don Park
Keyword(s):  
Charge Carrier ◽  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistors ◽  
Charge Carrier Transport ◽  
Solvent Exposure ◽  
Molecular Order ◽  
The Impact

The impact of the solvent exposure was more pronounced in thin P3HT films, especially at the center of the film. Concomitant with the improved ordering, the charge carrier transport increased in the resulting field-effect transistors.

Limits of Charge Carrier Transport in Halide Perovskites Revealed by Optical-Pump Terahertz-Probe Spectroscopy

2019 ◽  
Author(s):  
Hannes Hempel ◽  
Andrei Petsiu ◽  
Martin Stolterfoht ◽  
Pascal Becker ◽  
Dieter Neher ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Charge Carrier Transport ◽  
Optical Pump ◽  
Halide Perovskites ◽  
Probe Spectroscopy

scholarly journals Evaluation of the impact of compliance of precast discs of overlapping on the work of the frame of a multi-storey building

2019 ◽  
Vol 97 ◽  
pp. 04022
Author(s):  
Nikolay Trekin ◽  
Emil Kodysh ◽  
Alexander Bybka ◽  
Alexander Yamalov ◽  
Nikita Konkov
Keyword(s):  
Economic Performance ◽  
Computational Models ◽  
Precast Concrete ◽  
Building Frames ◽  
Frame Building ◽  
Numerical Studies ◽  
Frame Buildings ◽  
The Impact ◽  
Structural Solutions ◽  
Storey Building

The article provides an analysis and justification of the need to take into account the compliance of discs of overlapping and coatings when calculating frames from precast concrete structures. Previously conducted full-scale experiments showed that the rigidity of the precast overlapping with full filling of the seams, in comparison with the monolithic overlapping, decreases by 3-15 times due to the ductility of the joints. The use of refined computational models of structural solutions for frames, which take into account the compliance of the conjugations of elements, makes it possible to trace possible redistribution of efforts. Such an approach when reconstructing, it is possible to optimally select and calculate the enforcement of structure, and on new designing, to increase reliability and / or improve the economic performance of frame buildings. According to the results of analytical studies, formulas were adopted for the parameters that allow one to take into account the overall compliance of overlapping disks and coatings in computational models of building frames. Numerical studies on the computational model of a frame building made it possible to evaluate the effect of accounting for compliance on the stress-strain state of a multi-storey frame.

scholarly journals Impact of Tortuosity on Charge-Carrier Transport in Organic Bulk Heterojunction Blends

2017 ◽  
Vol 8 (5) ◽  
Author(s):  
Michael C. Heiber ◽  
Klaus Kister ◽  
Andreas Baumann ◽  
Vladimir Dyakonov ◽  
Carsten Deibel ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Bulk Heterojunction ◽  
Charge Carrier Transport
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