EFFECT OF DOPING AT THE SUBSTRATE/BUFFER LAYER INTERFACE ON THE RASHBA COEFFICIENT α IN In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As ASYMMETRIC QUANTUM WELLS

2003 ◽  
Author(s):  
TAKAAKI KOGA ◽  
JUNSAKU NITTA ◽  
STEPHANE MARCET
Keyword(s):  
Quantum Wells ◽  
Buffer Layer ◽  
Layer Interface ◽  
Asymmetric Quantum ◽  
Effect Of Doping

Third-Harmonic Generation in Special Parabolic Quantum Wells

2013 ◽  
Vol 760-762 ◽  
pp. 392-396
Author(s):  
You Bin Yu
Keyword(s):  
Quantum Well ◽  
Density Matrix ◽  
Quantum Wells ◽  
Harmonic Generation ◽  
Third Harmonic Generation ◽  
Third Harmonic ◽  
The Third ◽  
Compact Density ◽  
Asymmetric Quantum ◽  
Parabolic Quantum Wells

Third-harmonic generation in a special asymmetric quantum well is investigated. The third-harmonic generation coefficient is carried out by applying compact-density-matrix method. The numerical results are presented for a GaAs/AlGaAs asymmetric quantum well. The very large third-harmonic generation coefficient is obtained in this quantum well. Moreover, the third-harmonic generation coefficient dependents on the quantum well parameters are investigated, respectively.

Investigation of the effect of doping the GaN buffer layer with carbon on the avalanche breakdown effect of normally open HEMT AlGaN/AlN/GaN transistors

2021 ◽  
Author(s):  
Than Phyo Kyaw
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Breakdown Voltage ◽  
Carbon Doping ◽  
Avalanche Breakdown ◽  
Gate Length ◽  
20 Nm ◽  
Gan Buffer Layer ◽  
Effect Of Doping

The influence of the GaN buffer layer doped with carbon on the avalanche breakdown effect of normally open HEMT AlGaN / AlN / GaN transistors was studied. The avalanche breakdown was simulated in a structure where the gate length is LG = 0.3 mkm, the distance between the source and gate is LSG = 1.5 mkm, and the distance between the gate and drain is LGD = 2.2 mkm. For modeling, consider a layer doped with carbon, the thickness of which is 0.3 mkm, and the layer is located at a distance of 20 nm from the channel. The Simulation showed that with an increase in the concentration of carbon doping of the buffer, the breakdown voltage increases in the range UB = 225 – 360 (V). When the layer thickness changes to 0.4 mkm, the breakdown voltage increases in the range UB = 230 – 446 (V). For a structure where the gate length is LG = 0.8 mkm, the distance between the source and the gate is LSG = 1.0 mkm, the distance between the gate and drain is LGD = 3.0 mkm, the breakdown voltage increases in the range UB = 300 – 622 (V).

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