Quantum Dot (QD) Optical Modulators can provide high speed modulation in low cost indirect bandgap materials. Si based optical modulators can be realized with the inclusion of self-assembled Ge QDs to provide low cost, high speed CMOS compatible optical devices. In this paper, we present the optical characterization of a novel Ge-QD Si-SiO2 based waveguide for use in as an optical modulator. Optical performance figures of merit are investigated including insertion loss (IL) measurements, and Wavelength dependent loss (WDL). We present a multimode waveguide fabricated with conventional CMOS processing. The waveguide provides 4.43dB/cm loss and individual discrete absorption regimes corresponding to the unique minibands produced by superlattice properties of the self-assembled Ge QDs in the IR regime. Absorption properties of the Ge QDs are demonstrated and verified against the QD superlattice bandgap model. Analysis and simulation is presented to qualitatively compare the QD bandgap energies with the reported optical properties. The QD functionalized structure demonstrates the fundamental optical principles of a QD waveguide, setting the foundation for a active modulation testing of this QD based optical modulator.
