AN EFFICIENT NUMERICAL METHOD OF DC MODELING FOR POWER MOSFET, MESFET AND AlGaN/GaN HEMT

2008 ◽  
Vol 18 (04) ◽  
pp. 825-840
Author(s):  
TOUHIDUR RAHMAN ◽  
MOHAMMAD A. HUQUE ◽  
SYED K. ISLAM
Keyword(s):  
Entire Range ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Computational Cost ◽  
Model Parameters ◽  
Lagrange Polynomial ◽  
Gan Hemt ◽  
Long Channel ◽  
Device Operation ◽  
Dc Modeling

In this paper, an efficient numerical model applicable for wide varieties of long channel field-effect transistors (MOSFET, MESFET, HEMT, etc.) is developed. A set of available data is used to calculate the model parameters and another set of data is used to verify the accuracy of the model. This model provides a single expression that is applicable for the entire range of device biasing and can predict the output parameters with less than 1% error compared to the experimental results. Lagrange polynomial, the highest degree of polynomial for any given set of data, is used to derive the model from available data. This method is efficient in the sense that it can be derived from a limited number of experimental data and since it uses only one equation for entire range of the device operation hence its computational cost is also small.

scholarly journals Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

2019 ◽  
Vol 30 (21) ◽  
pp. 215201 ◽  
Author(s):  
Xuanqi Huang ◽  
Runchen Fang ◽  
Chen Yang ◽  
Kai Fu ◽  
Houqiang Fu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Steep Slope ◽  
Switching Device ◽  
Gan Hemt ◽  
Threshold Switching

Modeling the Carrier Mobility in Nanowire Channel FET

2007 ◽  
Vol 1017 ◽  
Author(s):  
Werner Prost ◽  
Kai Blekker ◽  
Quoc-Thai Do ◽  
Ingo Regolin ◽  
Sven Müller ◽  
...  
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Static Field ◽  
Device Model ◽  
Inas Nanowires ◽  
Effect Transistor ◽  
Long Channel

AbstractWe report on the extraction of carrier type, and mobility in semiconductor nanowires by adopting experimental nanowire field-effect transistor device data to a long channel MISFET device model. Numerous field-effect transistors were fabricated using n-InAs nanowires of a diameter of 50 nm as a channel. The I-V data of devices were analyzed at low to medium drain current in order to reduce the effect of extrinsic resistances. The gate capacitance is determined by an electro-static field simulation tool. The carrier mobility remains as the only parameter to fit experimental to modeled device data. The electron mobility in n-InAs nanowires is evaluated to µ = 13,000 cm2/Vs while for comparison n-ZnO nanowires exhibit a mobility of 800 cm2/Vs.

Thickness Dependent Device Operation of Sublimed Molecular Field-Effect Transistors

2003 ◽  
Author(s):  
S. Hoshino ◽  
M. Yoshida ◽  
S. Uemura ◽  
T. Kodzasa ◽  
T. Kamata ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Molecular Field ◽  
Device Operation

Sub-THz radiation room temperature sensitivity of long-channel silicon field effect transistors

2012 ◽  
Vol 20 (2) ◽  
Author(s):  
F. Sizov ◽  
A. Golenkov ◽  
D. But ◽  
M. Sakhno ◽  
V. Reva
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Cmos Technology ◽  
Effective Area ◽  
Noise Equivalent Power ◽  
Thz Radiation ◽  
Si Substrates ◽  
Temperature Operating ◽  
Long Channel

AbstractRoom temperature operating n-MOSFETs (n-type metal-oxide silicon field effect transistors) used for registration of sub-THz (sub-terahertz) radiation in the frequency range ν = 53−145 GHz are considered. n-MOSFETs were manufactured by 1-μm Si CMOS technology applied to epitaxial Si-layers (d ≈15 μm) deposited on thick Si substrates (d = 640 μm). It was shown that for transistors with the channel width to length ratio W/L = 20/3 μm without any special antennas used for radiation input, the noise equivalent power (NEP) for radiation frequency ν ≈76 GHz can reach NEP ∼6×10−10 W/Hz1/2. With estimated frequency dependent antenna effective area Sest for contact wires considered as antennas, the estimated possible noise equivalent power NEPpos for n-MOSFET structures themselves can be from ∼15 to ∼103 times better in the specral range of ν ∼55–78 GHz reaching NEPpos ≈10−12 W/Hz1/2.

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