Modeling the Carrier Mobility in Nanowire Channel FET

2007 ◽  
Vol 1017 ◽  
Author(s):  
Werner Prost ◽  
Kai Blekker ◽  
Quoc-Thai Do ◽  
Ingo Regolin ◽  
Sven Müller ◽  
...  
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Static Field ◽  
Device Model ◽  
Inas Nanowires ◽  
Effect Transistor ◽  
Long Channel

AbstractWe report on the extraction of carrier type, and mobility in semiconductor nanowires by adopting experimental nanowire field-effect transistor device data to a long channel MISFET device model. Numerous field-effect transistors were fabricated using n-InAs nanowires of a diameter of 50 nm as a channel. The I-V data of devices were analyzed at low to medium drain current in order to reduce the effect of extrinsic resistances. The gate capacitance is determined by an electro-static field simulation tool. The carrier mobility remains as the only parameter to fit experimental to modeled device data. The electron mobility in n-InAs nanowires is evaluated to µ = 13,000 cm2/Vs while for comparison n-ZnO nanowires exhibit a mobility of 800 cm2/Vs.

scholarly journals Low temperature multi-differential operational amplifier

Doklady BGUIR ◽  
2021 ◽  
Vol 19 (5) ◽  
pp. 52-60
Author(s):  
O. V. Dvornikov ◽  
V. A. Tchekhovski ◽  
V. L. Dziatlau ◽  
A. V. Kunts ◽  
N. N. Prokopenko
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Operational Amplifier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Instrumentation Amplifier ◽  
Current Consumption ◽  
Effect Transistor

A multi-differential operational amplifier, called OAmp3, designed for operation at temperatures up to minus 197 °С and developed on bipolar transistors and junction field-effect transistors of the master slice array МН2ХА030, is considered in the article. The circuitry features of the OAmp3 allow, due to the use of various negative feedback circuits, to implement a set of functions necessary for signal processing on a single amplifier: amplification (or current – voltage conversion), filtering, shift of the constant output voltage level. The performed measurements of OAmp3, connected as instrumentation amplifier circuit, showed that all manufactured products retain their performance in the temperature range from minus 150 °С to 20 °С, and individual samples – at minus 197 °С. It was found that the main reason for the loss of OAmp3 performance is an increase of the resistance of semiconductor resistors by almost 5.4 times at minus 197 °С compared to normal conditions and decrease in the junction field-effect transistor drain current. Together, these factors lead to decrease in the current consumption of the OAmp3 by almost 31 times at minus 180 °С compared to normal conditions. To reduce the temperature dependence of the current consumption and, thus, save the OAmp3 operability at low temperatures without changing the technological route of integrated circuits manufacturing, it is proposed to replace high-resistance semiconductor resistors with “pinch-resistors” formed on a small-signal p-junction field-effect transistor. The article presents the OAmp3 connection circuit in the form of an instrumental amplifier, the method and results of low-temperature measurements of experimental samples.

Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors

2014 ◽  
Vol 778-780 ◽  
pp. 436-439 ◽  
Author(s):  
Sebastian Roensch ◽  
Stefan Hertel ◽  
Sergey A. Reshanov ◽  
Adolf Schöner ◽  
Michael Krieger ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Deep Level ◽  
Drain Current ◽  
Evaluation Procedure ◽  
Defect Centers ◽  
Effect Transistor ◽  
Transient Spectroscopy

The electrically active deep levels in a graphene / silicon carbide field effect transistor (FET) were investigated by drain-current deep level transient spectroscopy (ID-DLTS). An evaluation procedure for ID-DLTS is developed in order to obtain the activation energy, the capture cross section and the trap concentration. We observed three defect centers corresponding to the intrinsic defects E1/E2, Ei and Z1/Z2 in n-type 6H-SiC. The determined parameters have been verified by conventional capacitance DLTS.

scholarly journals Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling

2021 ◽  
Vol 11 (1) ◽  
pp. 780
Author(s):  
Firas Natheer Abdul-Kadir ◽  
Yasir Hashim ◽  
Muhammad Nazmus Shakib ◽  
Faris Hassan Taha
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Drain Current ◽  
Oxide Thickness ◽  
Si Nanowire ◽  
Effect Transistor ◽  
Current Characteristics

This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). These parameters are critical factors of the characteristics of tunnel field effect transistors. The Silvaco TCAD has been used to study the electrical characteristics of Si-NW TFET. Output (gate voltage-drain current) characteristics with channel dimensions were simulated. Results show that 50nm long nanowires with 9nm-18nm diameter and 3nm oxide thickness tend to have the best nanowire tunnel field effect transistor (Si-NW TFET) characteristics.

On transconductance in the p-channel Si/SiGe heteroj unction field effect transistor

1992 ◽  
Vol 70 (10-11) ◽  
pp. 963-968
Author(s):  
S. J. Kovacic ◽  
J. J. Ojha ◽  
J. H. Swoger ◽  
J. G. Simmons ◽  
J-P. Noël ◽  
...  
Keyword(s):  
Experimental Evidence ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Physical Structure ◽  
Factors Affecting ◽  
Inversion Channel ◽  
Current Conduction ◽  
Effect Transistor

Three factors affecting the transconductance characteristics of inversion-channel heterojunction field effect transistors are discussed. In each case, the effect on the hole population in the channel and, thereby, on the transconductance of the device is hypothesized. Experimental evidence which corroborates the effect of the various phenomena is also presented. These factors are (i) saturation of the hole population in the channel arising from dopant de-ionization in the charge sheet, (ii) parallel gate to source and drain current conduction arising from the physical structure of the device, and (iii) the effect of gate leakage on the non-equilibrium surface potential of the n–n heterojunction.

Low operating voltage and low bias stress in top-contact SnCl2Pc/CuPc heterostructure-based bilayer ambipolar organic field-effect transistors

2015 ◽  
Vol 3 (27) ◽  
pp. 7118-7127 ◽  
Author(s):  
Sk. Md. Obaidulla ◽  
P. K. Giri
Keyword(s):  
Small Molecules ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Operating Voltage ◽  
Organic Field Effect Transistors ◽  
Bias Stress ◽  
Effect Transistor ◽  
Top Contact

A low operating voltage (∼10 V) top contact-bottom gate ambipolar organic field-effect transistor (OFET) is fabricated using vacuum-deposited small molecules, SnCl2Pc and CuPc. The ambipolar OFET exhibits balanced carrier mobility and low bias-stress (characteristics time constant ∼105 s) for both n-channel and p-channels.

Improving the accuracy of the charge-sheet model for the long-channel metal-oxide semiconductor field-effect transistor

1987 ◽  
Vol 65 (8) ◽  
pp. 995-998
Author(s):  
N. G. Tarr
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Potential Drop ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Analytic Approximation ◽  
Effect Transistor ◽  
Long Channel

It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.

On Razors Edge: Influence of the Source Insulator Edge on the Charge Transport of Vertical Organic Field Effect Transistors

MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1249-1257 ◽  
Author(s):  
F. Michael Sawatzki ◽  
Alrun A. Hauke ◽  
Duy Hai Doan ◽  
Peter Formanek ◽  
Daniel Kasemann ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Solar Cells ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Power ◽  
Strong Impact ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

ABSTRACTTo benefit from the many advantages of organic semiconductors like flexibility, transparency, and small thickness, electronic devices should be entirely made from organic materials. This means, additionally to organic LEDs, organic solar cells, and organic sensors, we need organic transistors to amplify, process, and control signals and electrical power. The standard lateral organic field effect transistor (OFET) does not offer the necessary performance for many of these applications. One promising candidate for solving this problem is the vertical organic field effect transistor (VOFET). In addition to the altered structure of the electrodes, the VOFET has one additional part compared to the OFET – the source-insulator. However, the influence of the used material, the size, and geometry of this insulator on the behavior of the transistor has not yet been examined. We investigate key-parameters of the VOFET with different source insulator materials and geometries. We also present transmission electron microscopy (TEM) images of the edge area. Additionally, we investigate the charge transport in such devices using drift-diffusion simulations and the concept of a vertical organic light emitting transistor (VOLET). The VOLET is a VOFET with an embedded OLED. It allows the tracking of the local current density by measuring the light intensity distribution.We show that the insulator material and thickness only have a small influence on the performance, while there is a strong impact by the insulator geometry – mainly the overlap of the insulator into the channel. By tuning this overlap, on/off-ratios of 9x105 without contact doping are possible.

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