PACKAGING AND WIDE-PULSE SWITCHING OF 4 MM × 4 MM SILICON CARBIDE GTOs

2009 ◽  
Vol 19 (01) ◽  
pp. 173-181
Author(s):  
HEATHER O'BRIEN ◽  
M. GAIL KOEBKE
Keyword(s):  
Silicon Carbide ◽  
Recovery Time ◽  
Pulse Current ◽  
Pulse Discharge ◽  
Single Pulse ◽  
Electronic Components ◽  
Army Research Laboratory ◽  
Pulse Switching ◽  
Reliable Performance ◽  
High Pulse

The U. S. Army Research Laboratory (ARL) is investigating compact, energy-dense electronic components to realize high-power, vehicle-mounted survivability and lethality systems. These applications require switching components that are low in weight and volume, exhibit reliable performance, and are easy to integrate into the vehicles' systems. The devices reported here are 4 mm × 4 mm silicon carbide GTOs rated for 3000 V blocking. These devices were packaged at ARL for high pulse current capability, high voltage protection, and minimum package inductance. The GTOs were switched in a 1-ms half-sine, single-pulse discharge circuit to determine reliable peak current and recovery time (or Tq). The GTOs were repeatedly switched over 300 A peak (3.3 A/cm2 and an action of 60 A2s) with a recovery time of 20 µs. The switches were also evaluated for dV/dt immunity up to an instantaneous slope of 3 kV/ µs.

Experimental results of testing high-temperature-high-current pulsed operation of SiC MOSETs and SiC diodes

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000066-000071
Author(s):  
Steven A. Morris ◽  
Ruichen Zhao ◽  
Zinovy Krugliak
Keyword(s):  
Pulse Current ◽  
Schottky Diodes ◽  
Single Pulse ◽  
Maximum Temperature ◽  
Resonant Circuit ◽  
High Current ◽  
Hot Plate ◽  
Peak Current ◽  
Conduction Loss ◽  
Pulse Switching

Using hot plate experiments testing to a maximum temperature of 200 °C, we performed tests to determine the maximum single pulse current allowable for Cree CMF20120D SiC MOSFETs and Cree C4D40120D Schottky diodes. Using single pulse switching of a resonant circuit, a half-sine shaped current pulse of 5∼10 μsec duration was used to test the devices. A criterion for maximum allowable peak current was determined from the point of dramatic increase in conduction loss as a function of peak current. At 200 °C, maximum single pulse current was found to be 200 amp for the SiC MOSFET and about 500 amp for the SiC Schottky diode (both legs in parallel). We also report measurements of leakage current on the devices as a function of temperature, and will present measurements on an IGBT device of comparable current rating for comparison. Simple measurements of this type are a useful way of determining operational limits of SiC devices at temperatures that are not reported in the device data sheet.

X-band Silicon Carbide IMPATT Oscillator

2001 ◽  
Vol 680 ◽  
Author(s):  
Konstantin V. Vassilevski ◽  
Alexandr V. Zorenko ◽  
Konstantinos Zekentes
Keyword(s):  
Silicon Carbide ◽  
Pulse Duration ◽  
Output Power ◽  
Pulse Current ◽  
Input Pulse ◽  
Threshold Current ◽  
Avalanche Breakdown ◽  
X Band

ABSTRACTPulsed X-band (8.2 - 12.4 GHz) IMPATT oscillators have been fabricated and characterized. They utilized 4H-SiC diodes with single drift p+-n-n+ structures and avalanche breakdown voltages of about 290 V. The microwave oscillations appeared at a threshold current of 0.3 A. The maximum measured output power was about 300 mW at input pulse current of 0.35 A and pulse duration of 40 ns.

Research on the influence of the discharge breakdown process on the crater formation during EDM

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Wenchao Zhang
Keyword(s):  
Mathematical Model ◽  
Discharge Channel ◽  
Electrical Discharge Machining ◽  
Pulse Discharge ◽  
Single Pulse ◽  
Crater Formation ◽  
Content Type ◽  
Breakdown Process ◽  
Positive Ions ◽  
Fluid Coupling

PurposeThis paper aims to study the breakdown, oscillation and vanishing of the discharge channel and its influence on crater formation with simulation and experimental methods. The experiment results verified the effect of the oscillating characteristics of the discharge channel on the shape of the crater.Design/methodology/approachA mathematical model that considers the magnetohydrodynamics (MHD) and the discharge channel oscillation was established. The micro process of discharging based on magnetic-fluid coupling during electrical discharge machining (EDM) was simulated. The breakdown, oscillation and vanishing stage of the discharge channel were analyzed, and the crater after machining was obtained. Finally, a single-pulse discharge experiment during EDM was conducted to verify the simulation model.FindingsDuring the breakdown of the discharge channel, the electrons move towards the center of the discharge channel. The electrons at the end diverge due to the action of water resistance, making the discharge channel appear wide at both ends and narrow in the middle, showing the pinch effect. Due to the mutual attraction of electrons and positive ions in the channel, the transverse oscillation of the discharge channel is shown on the micro level. Therefore, the position of the discharge point on the workpiece changes. The longitudinal oscillation in the discharge channel causes the molten pool on the workpiece to be ejected due to the changing pressure. The experimental results show that the shape of the crater is similar to that in the simulation, which verifies the correctness of the simulation results and also proves that the crater generated by the single pulse discharge is essentially the result of the interaction between transverse wave and longitudinal wave.Originality/valueIn this paper, the simulation of the discharge breakdown process in EDM was carried out, and a new mathematical model that considers the MHD and the discharge channel oscillation was established. Based on the MHD module, the discharge breakdown, oscillation and vanishing stages were simulated, and the velocity field and pressure field in the discharge area were obtained.

Electric and thermal characteristics of repeated sliding electric contact interface under high pulse current

2015 ◽  
Vol 27 (5) ◽  
pp. 55007 ◽  
Author(s):  
朱仁贵 Zhu Rengui ◽  
张倩 Zhang Qian ◽  
李治源 Li Zhiyuan ◽  
王瑞林 Wang Ruilin ◽  
邢彦昌 Xing Yanchang ◽  
...  
Keyword(s):  
Pulse Current ◽  
Thermal Characteristics ◽  
Electric Contact ◽  
Contact Interface ◽  
Sliding Electric Contact ◽  
High Pulse

scholarly journals 10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization

Energies ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 4566 ◽  
Author(s):  
Asllani ◽  
Morel ◽  
Phung ◽  
Planson
Keyword(s):  
Silicon Carbide ◽  
Leakage Current ◽  
Voltage Drop ◽  
Forward Bias ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Pulse Switching ◽  
Turn On ◽  
Forward Voltage Drop ◽  
Fabrication And Characterization

This paper presents the design, fabrication and characterization results obtained on the last generation (third run) of SiC 10 kV PiN diodes from SuperGrid Institute. In forward bias, the 59 mm2 diodes were tested up to 100 A. These devices withstand voltages up to 12 kV on wafer (before dicing, packaging) and show a low forward voltage drop at 80 A. The influence of the temperature from 25 °C to 125 °C has been assessed and shows that resistivity modulation occurs in the whole temperature range. Leakage current at 3 kV increases with temperature, while being three orders of magnitude lower than those of equivalent Si diodes. Double-pulse switching tests reveal the 10 kV SiC PiN diode’s outstanding performance. Turn-on dV/dt and di/dt are −32 V/ns and 311 A/µs, respectively, whereas turn-off dV/dt and di/dt are 474 V/ns and −4.2 A/ns.

scholarly journals Research on Shape Change of Multimaterial Electrode for EDM

2019 ◽  
Vol 2019 ◽  
pp. 1-11
Author(s):  
Wenjian Wang ◽  
Yu Liu ◽  
Wenchao Zhang ◽  
Fujian Ma ◽  
Dapeng Yang ◽  
...  
Keyword(s):  
Material Removal ◽  
Shape Change ◽  
Pulse Discharge ◽  
Single Pulse ◽  
Machining Process ◽  
Die Steel ◽  
Electrode Shape ◽  
Simulation Strategy ◽  
Feed Strategy ◽  
Simulation Results

The shape change law of a multimaterial electrode in EDM was studied, and a cosimulation between ANSYS and MATLAB of electrode shape change of the multimaterial electrode and workpiece was established. Element birth and death in ANSYS was used to obtain the removal volume in a single-pulse discharge, and the electrode feed strategy, material removal, and renewal strategy are considered to establish the shape simulation strategy. Then, a program based on MATLAB software was compiled to simulate the machining process and predict the shape change of the multimaterial electrode of different combinations. The experiments of different multimaterial electrodes were carried out with the die steel as the workpiece. The simulation results were compared with the experimental results to verify the effectiveness of the simulation model.

Research on Micro-Size Electrical Discharge Machining Polycrystalline Diamond

2019 ◽  
Vol 943 ◽  
pp. 14-19 ◽  
Author(s):  
Yun Hai Jia ◽  
Jian Mei Guo ◽  
Yan Guo ◽  
Fan Yu
Keyword(s):  
Pulse Duration ◽  
High Efficiency ◽  
Electrical Discharge Machining ◽  
Pulse Discharge ◽  
Cutting Tools ◽  
Polycrystalline Diamond ◽  
Green Manufacturing ◽  
Single Pulse ◽  
Pit Depth ◽  
Thermal Influence

With the demand of modern cutting technology for ‘high efficiency, precise, flexibility and green manufacturing’, polycrystalline diamond materials as cutting tools have been widely used in automobile, aerospace and non-metal processing. Electro-spark erosion is one of the most effective ways to machine polycrystalline diamond materials. Single pulse discharge is one of the research foundations of micro-EDM. Using 2 micron granularity polycrystalline diamond as experiment material, the influence of single pulse discharge technology on the removal efficiency of materials was studied, such as pit radius, pit depth and radius-depth ratio, etc. The experimental results show that, with the extension of the pulse duration, the radius of the discharge pit begins to increase rapidly, then slowly increases, and finally to slow down; while the radius of thermal influence zone increases rapidly and then continues to increase slowly. With the extension of pulse duration, the ratio of pit depth to radius changes within the range of 0.05 ~ 0.25, which shows a downward trend basically.

Comparisons of single pulse discharge crater geometries in EDM and EAM

2016 ◽  
Vol 22 ◽  
pp. 74-81 ◽  
Author(s):  
Min Zhang ◽  
Qinhe Zhang ◽  
Liya Dou ◽  
Qingyu Liu ◽  
Chunjie Dong
Keyword(s):  
Pulse Discharge ◽  
Single Pulse
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