BI-DIRECTIONAL SCALABLE SOLID-STATE CIRCUIT BREAKERS FOR HYBRID-ELECTRIC VEHICLES

2009 ◽  
Vol 19 (01) ◽  
pp. 183-192 ◽  
Author(s):  
D. P. URCIUOLI ◽  
VICTOR VELIADIS

Power electronics in hybrid-electric military ground vehicles require fast fault isolation, and benefit additionally from bi-directional fault isolation. To prevent system damage or failure, maximum fault current interrupt speeds in tens to hundreds of microseconds are necessary. While inherently providing bi-directional fault isolation, mechanical contactors and circuit breakers do not provide adequate actuation speeds, and suffer severe degradation during repeated fault isolation. Instead, it is desired to use a scalable array of solid-state devices as a solid-state circuit breaker (SSCB) having a collectively low conduction loss to provide large current handling capability and fast transition speed for current interruption. Although, both silicon-carbide (SiC) JFET and SiC MOSFET devices having high breakdown voltages and low drain-to-source resistances have been developed, neither device structure alone is capable of reverse blocking at full voltage. Limitations exist for using a dual common-source structure for either device type. Small-scale SSCB experiments were conducted using 0.03 cm2 normally-on SiC VJFETs. Based on results of these tests, a normally-on VJFET device modification is made, and a proposed symmetric SiC JFET is considered for this application.

2011 ◽  
Vol 20 (03) ◽  
pp. 433-439
Author(s):  
D. P. URCIUOLI ◽  
VICTOR VELIADIS

Bi-directional solid-state circuit breakers (BDSSCBs) can provide performance benefits over mechanical fault protection devices. A common-source configuration of normally ON, junction field effect transistors (JFETs) is favorable for BDSSCB implementations. SiC 0.1-cm2 1200-V JFETs designed for normally-ON operation at a zero-volt gate bias, and having low leakage currents, were used in the fabrication of a 30-A BDSSCB switch module. Operation of the module under continuous current and during turn-OFF transitions was evaluated to verify the parallel scalability of the common-source configuration. A bi-directional snubber connected across the switch module mitigated inductive voltage overshoot during BDSSCB turn-OFF transitions. At turn-OFF, under maximum power tests in both directions, the load current was reduced from 30 A to 0 A in approximately 10 μs, with a supply voltage of 600 V, and a BDSSCB peak voltage of 680 V. These results demonstrate the functionality and current scalability of this BDSSCB topology.


2020 ◽  
Vol 1004 ◽  
pp. 1010-1015
Author(s):  
Mitsuhiko Sagara ◽  
Keiji Wada ◽  
Shin-Ichi Nishizawa

This paper investigates a degradation of SiC power device for DC circuit breaker through repetitive unclamped inductive switching (UIS) tests. Being much lower compared with Si devices, it has been considered an application for DC circuit breakers using SiC semiconductor. In order to use for the DCbreaker, it is essential to evaluate the destructive endurance for UIS test.This paper evaluates a deterioration phenomenon by paying attention to the decrease of the gate voltage of the SiC-MOSFETs under the degradation at repetitive UIS test.


Electronics ◽  
2019 ◽  
Vol 8 (8) ◽  
pp. 837 ◽  
Author(s):  
Qin ◽  
Mo ◽  
Xun ◽  
Zhang ◽  
Dong

Due to the lower on-state resistance, direct current (DC) solid state circuit breakers (SSCBs) based on silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) can reduce on-state losses and the investment of the cooling system when compared to breakers based on silicon (Si) MOSFETs. However, SiC MOSFETs, with smaller die area and higher current density, lead to weaker short-circuit ability, shorter short-circuit withstand time and higher protection requirements. To improve the reliability and short-circuit capability of SiC-based DC solid state circuit breakers, the short-circuit fault mechanisms of Si MOSFETs and SiC MOSFETs are revealed. Combined with the desaturation detection (DESAT), a “soft turn-off” short-circuit protection method based on source parasitic inductor is proposed. When the DESAT protection is activated, the “soft turn-off” method can protect the MOSFET against short-circuit and overcurrent. The proposed SSCB, combined with the flexibility of the DSP, has the μs-scale ultrafast response time to overcurrent detection. Finally, the effectiveness of the proposed method is validated by the experimental platform. The method can reduce the voltage stress of the power device, and it can also suppress the short-circuit current.


2017 ◽  
Vol 897 ◽  
pp. 661-664
Author(s):  
Andreas Huerner ◽  
Tobias Erlbacher ◽  
Anton J. Bauer ◽  
Lothar Frey

In this study, the basic device features of a novel monolithically integrated solid-state-circuit-breaker (MI-SSCB) are demonstrated and analyzed using numerical simulations. Thereby, the MI-SSCB is built according to the concept of the dual thyristor. But, in comparison to similar technical solutions reported in literature, due to the advanced device structure proposed in this study a monolithically integration could be achieved for the first time.


2017 ◽  
Vol 12 (5) ◽  
pp. 409 ◽  
Author(s):  
Luigi Rubino ◽  
Guido Rubino ◽  
Pompeo Marino ◽  
Luigi Pio Di Noia

Electronics ◽  
2021 ◽  
Vol 10 (10) ◽  
pp. 1204
Author(s):  
Gul Ahmad Ludin ◽  
Mohammad Amin Amin ◽  
Hidehito Matayoshi ◽  
Shriram S. Rangarajan ◽  
Ashraf M. Hemeida ◽  
...  

This paper proposes a new and surge-less solid-state direct current (DC) circuit breaker in a high-voltage direct current (HVDC) transmission system to clear the short-circuit fault. The main purpose is the fast interruption and surge-voltage and over-current suppression capability analysis of the breaker during the fault. The breaker is equipped with series insulated-gate bipolar transistor (IGBT) switches to mitigate the stress of high voltage on the switches. Instead of conventional metal oxide varistor (MOV), the resistance–capacitance freewheeling diodes branch is used to bypass the high fault current and repress the over-voltage across the circuit breaker. The topology and different operation modes of the proposed breaker are discussed. In addition, to verify the effectiveness of the proposed circuit breaker, it is compared with two other types of surge-less solid-state DC circuit breakers in terms of surge-voltage and over-current suppression. For this purpose, MATLAB Simulink simulation software is used. The system is designed for the transmission of 20 MW power over a 120 km distance where the voltage of the transmission line is 220 kV. The results show that the fault current is interrupted in a very short time and the surge-voltage and over-current across the proposed breaker are considerably reduced compared to other topologies.


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