How the spin-orbit interaction appears with the same order of a non-commutative change of framework for relativistic fermions

2018 ◽  
Vol 33 (27) ◽  
pp. 1850158
Author(s):  
Z. Derakhshani ◽  
M. Ghominejad

In this research, in a difficult but absolutely precise way of calculation, we show how a very tiny amount of a non-commutative change of quantum space would appear almost as big as a normal physical interaction, namely the Rashba spin-orbit interaction, for relativistic fermions. Hence, in order to show that, we firstly solve a relativistic equation of motion of a Dirac particle, influenced by a typical harmonic energy-dependent interaction for commutative and non-commutative frameworks via the Nikiforov–Uvarov exact approach. Then to study perturbation effects of a spin-orbit interaction, we apply it for both mentioned frameworks, obtaining their energy polynomial relations and discriminant formula to precisely extract all physical-admissible roots of their quartic equations. In this step, we analyze the behaviors of their quartic eigenvalue polynomials in four sections and accurately compare them one by one. Finally, we distinctly show that the magnitude of the physical spin-orbit perturbation appears, almost of the same order of imposing a non-commutative geometry change of framework, as an outstanding result.

1974 ◽  
Vol 29 (1) ◽  
pp. 31-41 ◽  
Author(s):  
E. König ◽  
S. Kremer

The complete ligand field -Coulomb repulsion -spin orbit interaction matrices have been derived for the d4 and d6 electron configurations within octahedral (Oh) and tetrahedral (Td) symmetry. The calculations were perform ed in both the weak-field and strong-field coupling schemes and complete agreement of the results was achieved. The energy matrices are parametrically dependent on ligand field (Dq), Coulomb repulsion (B, C) and spin-orbit interaction (ζ). Correct energy diagrams are presentend which display the splittings by spin-orbit perturbation as well as the effect of configuration mixing. Applications to the interpretation of optical spectral data, to the detailed behavior at the crossover of ground terms, and to complete studies in magnetism are pointed out.


1974 ◽  
Vol 29 (3) ◽  
pp. 419-428 ◽  
Author(s):  
E. König ◽  
R. Schnakig ◽  
S. Kremer

The complete ligand-field, Coulomb interelectronic repulsion, and spin-orbit interaction matrices have been derived for the d5 electron configuration within octahedral (Oh) and tetrahedral (Td) symmetry. The calculations were performed in both the weak-field and strong-field coupling schemes and complete agreement of the results was achieved. The energy matrices are parametrically dependent on ligand field (Dq), Coulomb repulsion (B, C), and spin-orbit interaction (ζ). Correct energy diagrams are presented which display the splittings by spin-orbit perturbation as well as the effect of configuration mixing. Applications to the interpretation of electronic spectra, and to complete studies in magnetism are pointed out. The detailed behavior at the crossover of ground terms is considered


Author(s):  
J. Nitta

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.


2019 ◽  
Vol 3 (6) ◽  
Author(s):  
J. N. Nelson ◽  
J. P. Ruf ◽  
Y. Lee ◽  
C. Zeledon ◽  
J. K. Kawasaki ◽  
...  

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Miguel J. Carballido ◽  
Christoph Kloeffel ◽  
Dominik M. Zumbühl ◽  
Daniel Loss

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Yuanjie Chen ◽  
Shaoyun Huang ◽  
Dong Pan ◽  
Jianhong Xue ◽  
Li Zhang ◽  
...  

AbstractA dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin–orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin–orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin–orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin–orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices, and topological quantum devices.


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