HIGH-FIELD TRANSPORT PROPERTIES OF T'-Ln2-xCexCuO4 (Ln=Nd, Pr, La)

2002 ◽  
Vol 16 (20n22) ◽  
pp. 3216-3219 ◽  
Author(s):  
T. SEKITANI ◽  
N. MIURA ◽  
M. NAITO

We report low-temperature magnetotransport in the normal state of the electron-doped superconductors, Nd 2-x Ce x CuO 4, Pr 2-x Ce x CuO 4, and La 2-x Ce x CuO 4, by suppressing the superconductivity with high magnetic fields. The normal state ρ-T curve shows an up-turn at low temperatures, which has a log T dependence with saturation at lowest temperatures. The up-turn is gradually suppressed with increasing magnetic field, resulting in negative magnetoresistance. We discuss these findings on the basis of the Kondo scattering originating from the magnetic moments of Cu 2+ ions.

1999 ◽  
Vol 52 (2) ◽  
pp. 227
Author(s):  
M. Tokunaga ◽  
N. Miura ◽  
Y. Moritomo

We have studied the effects of a magnetic field on the magnetism and transport properties of the layered manganites R1/2Sr3/2MnO4 (R = La and Nd) in pulsed magnetic fields up to 40 T. The R = La crystal shows metamagnetic-like transitions above 30 T, concomitantly with a colossal magnetoresistance (CMR) effect as large as [ρ(0) - ρ(H)]/ρ(H) > 103 with a field of µοH = 38 T at low temperatures. These transitions can be ascribed to the field-induced melting of the real-space ordering of the eg electrons (charge ordering). For the R = Nd crystal, a magnetic field along the c-axis enhances the two-dimensionality in the conductivity. Moreover, we observed metamagnetic-like transitions accompanied by the CMR effects at low temperatures, in spite of the absence of charge ordering.


2002 ◽  
Vol 16 (20n22) ◽  
pp. 3171-3174
Author(s):  
F. F. BALAKIREV ◽  
J. B. BETTS ◽  
G. S. BOEBINGER ◽  
S. ONO ◽  
Y. ANDO ◽  
...  

We report low-temperature Hall coefficient in the normal state of the high-Tc superconductor Bi 2 Sr 2-x La x CuO 6+δ. The Hall coefficient was measured down to 0.5 K by suppressing superconductivity with a 60 T pulsed magnetic field. The carrier concentration was varied from overdoped to underdoped regimes by partially substituting Sr with La in a set of five samples. The observed saturation of the Hall coefficient at low temperatures suggests the ability to extract the carrier concentration of each sample. The most underdoped sample exhibits a diverging Hall coefficient at low temperatures, consistent with a depletion of carriers in the insulating ground state. The Hall number exhibits a sharp peak providing additional support for the existence of a phase boundary at the optimal doping.


2004 ◽  
Vol 18 (27n29) ◽  
pp. 3813-3816 ◽  
Author(s):  
A. B. HENRIQUES ◽  
L. K. HANAMOTO ◽  
E. TER HAAR ◽  
E. ABRAMOF ◽  
A. Y. UETA ◽  
...  

The near band-edge polarized optical optical absortion spectra of EuTe at low temperatures and high magnetic fields were investigated. The samples were grown by MBE on BaF 2 substrates, and the thickness varied in the 0.18-2.0 μm range. At high magnetic fields, the well-known 4f7→4f65d(t2g) optical transition splits into two well resolved lines at σ+ and two lines for σ-. These lines can be described by localized transitions tunable by the d-f exchange interaction, with a quadratic dependence on the intensity of the external magnetic field. Comparative measurements of the magnetization and the optical absorption as a function temperature provides a further test of the model of a localized excitation extending over a few lattice sites.


2009 ◽  
Vol 23 (17) ◽  
pp. 3579-3585
Author(s):  
SANDIP MAJUMDAR ◽  
AMAL KUMAR DAS ◽  
SAMIT KUMAR RAY

We report the study of a promising Ge -based magnetic heterojunction diode composed of a Mn -doped p - Ge film grown on lightly doped n - Ge film. Magnetic field dependent current rectification of the diode occurs at a low temperature. The measurements of resistivity and magnetoresistance in plane at low temperatures reveal the presence of impurity band in Ge due to Mn doping.


1999 ◽  
Vol 588 ◽  
Author(s):  
F. M. Munteanu ◽  
Y. Kim ◽  
C. H. Perry ◽  
D. G. Rickel ◽  
J. A. Simmons ◽  
...  

AbstractWe present the results of the magneto-photoluminescence measurements performed on modulation doped GaAs/AlGaAs heterostructures in high magnetic fields (up to 60T) and low temperatures (0.37−1.5K). With increasing magnetic field we observe the formation of the triplet and singlet states of negatively charged magneto-excitons (X−) in addition to the neutral exciton (X0). Their behavior with field strongly depends on the sample geometry. In the case of a modulation doped quantum well (QW) with a well-width of 200A, the and states cross at a magnetic field of about 40T, whereas for a modulation-doped single heterojunction (SHJ) these states show no crossing over the whole range of available fields.


1994 ◽  
Vol 199-200 ◽  
pp. 437-439 ◽  
Author(s):  
A. Hiess ◽  
C. Geibel ◽  
G. Sparn ◽  
C.D. Bredl ◽  
F. Steglich ◽  
...  

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