RESONANT TUNNELING IN SEMICONDUCTOR MULTIBARRIER HETEROSTRUCTURES

2002 ◽  
Vol 16 (30) ◽  
pp. 4607-4619 ◽  
Author(s):  
JIAN GONG ◽  
SHI LIANG BAN ◽  
XI XIA LIANG
Keyword(s):  
Resonant Tunneling ◽  
Mixed Crystal ◽  
Coupling Effect ◽  
Tunneling Current ◽  
Transverse Motion ◽  
Longitudinal Motion ◽  
Zero Bias ◽  
Resonant States ◽  
Dimensional Approximation ◽  
Peak To Valley Ratio

The effect of coupling between the electronic transverse motion and longitudinal motion is considered in the theoretical investigation of the resonant tunneling in a semiconductor multi-barriers heterostructure. A numerical calculation is carried out for rectangular and parabolic-well heterostructures consisting of ZnSe/Zn 1-x Cd x Se . The result indicates that the coupling effect results in not only a movement of the resonant peaks but also a reduction of the peak-to-valley ratio in the transmission spectrum. The effect of the electronic transverse motion on the higher-lying resonant states for the resonant tunneling is more remarkable for both the zero and non-zero bias voltages. The J-V characteristic formula of tunneling current density, which is different from Esaki's result, is given by using a two-dimensional approximation. The influence of temperature and mixed crystal effect on the J-V characteristic is also investigated.

Self‐consistent analysis of resonant tunneling current

1986 ◽  
Vol 49 (19) ◽  
pp. 1248-1250 ◽  
Author(s):  
Hiroaki Ohnishi ◽  
Tsuguo Inata ◽  
Shunichi Muto ◽  
Naoki Yokoyama ◽  
Akihiko Shibatomi
Keyword(s):  
Resonant Tunneling ◽  
Tunneling Current ◽  
Self Consistent

Simulation of GaAs/AlxGa1-xAs/InyGa1-y As Double-Barrier Resonant Tunneling Structures

2011 ◽  
Vol 399-401 ◽  
pp. 1093-1096
Author(s):  
Yuan Ming Zhou
Keyword(s):  
Transmission Coefficient ◽  
Current Density ◽  
Resonant Tunneling ◽  
Indium Content ◽  
Rapid Decrease ◽  
Supply Function ◽  
Double Barrier ◽  
Resonant Condition ◽  
Zero Bias ◽  
Double Barrier Resonant Tunneling

We study the resonant tunneling in symmetric GaAs/AlxGa1-xAs/InyGa1-yAs double-barrier resonant-tunneling structures. Effects of three factors on the resonant tunneling are simulated and discussed. On increasing the barrier height, the decrease of current density is attributed to the interplay between the increase of the supply function of available electrons and the rapid decrease of the transmission coefficient through the device area, and the lowest Indium content for realizing the zero-bias resonant tunneling increases. With the increase of the barrier (well) width, the decrease of the current density can be explained by the fact that both the supply function and the transmission coefficient decreases, and the lowest Indium content meeting the zero-bias resonant condition decreases.

431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

2018 ◽  
Vol 112 (3) ◽  
pp. 033508 ◽  
Author(s):  
Tyler A. Growden ◽  
Weidong Zhang ◽  
Elliott R. Brown ◽  
David F. Storm ◽  
Katurah Hansen ◽  
...  
Keyword(s):  
Current Density ◽  
Resonant Tunneling ◽  
Tunneling Current ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

RESONANT TUNNELING IN DOUBLE BARRIER SEMICONDUCTOR NANO-STRUCTURES

1995 ◽  
Vol 09 (23) ◽  
pp. 3039-3051
Author(s):  
DILIP K. ROY ◽  
AJIT SINGH
Keyword(s):  
Quantum Measurement ◽  
Current Density ◽  
Resonant Tunneling ◽  
Tunneling Current ◽  
Double Barrier ◽  
Tunneling Diode ◽  
Nano Structures ◽  
Current Densities ◽  
Double Barrier Resonant Tunneling ◽  
Measurement Approach

The principles of operation of a double barrier resonant tunneling diode (DBRTD) giving rise to negative differential conductivity effect are first reviewed. Next, the physics of resonant tunneling based on (i) the time-independent conventional approach and (ii) the time-dependent quantum measurement approach, as applied to a DBRTD, is discussed. Expressions for the resonant tunneling current densities through the barriers are then derived on the ideas of quantum measurement. Through the well the current, however, flows by the conventional mechanism. The three current density magnitudes are found to be identical under resonant conditions. Finally, an expression for the resonant tunneling current density due to a group of incident electrons is derived.

In-Plane Vibration Analysis of Rotating Tapered Timoshenko Beams

2016 ◽  
Vol 08 (05) ◽  
pp. 1650064 ◽  
Author(s):  
Jianshi Fang ◽  
Ding Zhou
Keyword(s):  
Chebyshev Polynomials ◽  
Coupling Effect ◽  
Mode Shapes ◽  
Transverse Motion ◽  
Timoshenko Beams ◽  
Rotational Angle ◽  
Plane Vibration ◽  
Present Solution ◽  
Boundary Functions ◽  
Geometric Boundary

Modal analysis of rotating tapered cantilevered Timoshenko beams undergoing in-plane vibration is investigated. The coupling effect of axial motion and transverse motion is considered. The Kane dynamic method is applied to deriving the governing eigenvalue equations. The displacement and rotational angle components are approximately described by the products of Chebyshev polynomials and corresponding boundary functions. Chebyshev polynomials guarantee the numerical robustness while the boundary functions guarantee the satisfaction of the geometric boundary conditions. The excellent convergence of the present solution is exhibited. The results are compared with those available in literature, good agreement is observed. The parametric studies on modal characteristics are presented in detail. The tuned rotational speed is examined and the eigenvalue loci veering phenomenon along with the corresponding mode shapes is investigated.

Influence on Characteristics of RTD Due to Variation of Different Parameters and Material Properties

2017 ◽  
Vol 26 (04) ◽  
pp. 1740022 ◽  
Author(s):  
Banasree Das ◽  
Manas Kumar Parai
Keyword(s):  
Simple Model ◽  
Electronic Transport ◽  
Material Properties ◽  
Resonant Tunneling ◽  
Barrier Structure ◽  
Double Barrier ◽  
Tunneling Diode ◽  
Silvaco Atlas ◽  
Double Barrier Structure ◽  
Peak To Valley Ratio

In this paper, novel features offered by Resonant Tunneling Diode (RTD) are reviewed by simulating it under different conditions. GaAs/AlGaAs based RTD is used as the reference one to obtain the characteristics due to parametric variations. To fulfil this purpose a simple model of resonant electronic transport through a double-barrier structure is developed. I-V characteristics are studied by varying barrier parameters and well width. Different peak and valley currents are measured under these conditions. For the same set of parameters both symmetric and asymmetric cases are considered. Different materials of lower effective mass are also taken into consideration to improve Peak to Valley Ratio (PVR). The Indium (In) based materials are considered to compare the characteristics obtained from the conventional GaAs based RTD structure. All these proposed structures are simulated using Silvaco Atlas software.

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