DOPED LEAD TELLURIDE-BASED SEMICONDUCTORS: NEW POSSIBILITIES FOR DETECTION OF TERAHERZ RADIATION

2004 ◽  
Vol 18 (16) ◽  
pp. 2223-2245 ◽  
Author(s):  
DMITRIY KHOKHLOV

Doping of the lead telluride and related alloys with the group III impurities results in the appearance of unique physical features of the material, such as persistent photoresponse, enhanced responsive quantum efficiency (up to 100 photoelectrons/incident photon), radiation hardness and many others. We review physical principles of operation of the photodetecting devices based on the group III doped IV–VI including possibilities of fast quenching of the persistent photoresponse, construction of a focal-plane array, new readout technique, and others. Comparison of performance of the state of the art Ge ( Ga ) and Si ( Sb ) photodetectors with their lead telluride based analogs shows that the responsivity of PbSnTe ( In ) photodetectors is by several orders of magnitude higher. High photoresponse is detected at the wavelength of 241 μm in PbSnTe ( In ), and it is possible that the photoconductivity spectrum covers all the submillimeter wavelength range.

2001 ◽  
Vol 692 ◽  
Author(s):  
Dmitriy Dolzhenko ◽  
Ivan Ivanchik ◽  
Dmitriy Khokhlov

AbstractDoping of the lead telluride and related alloys with the group III impurities results in appearance of unique physical features of the material, such as persistent photoresponse, enhanced responsive quantum efficiency (up to 100 photoelectrons/incident photon), radiation hardness and many others. We review physical principles of operation of the photodetecting devices based on the group III-doped IV-VI including possibilities of fast quenching of the persistent photoresponse, construction of a focal-plane array, new readout technique, and others. Comparison of performance of the state of the art Ge(Ga) and Si(Sb) photodetectors with their lead telluride-based analogs shows that the responsivity of PbSnTe(In) photodetectors is by several orders of magnitude higher. High photoresponse is detected at the wavelength 116 micrometers in PbSnTe(In), and it is possible that the photoconductivity spectrum covers all the submillimeter wavelength range.


1997 ◽  
Vol 484 ◽  
Author(s):  
D. R. Khokhlov

AbstractDoping of the lead telluride and related alloys with the group III impurities results in an appearance of the unique physical features of a material, such as such as persistent photoresponse, enhanced responsive quantum efficiency (up to 100 photoelectrons/incident photon), radiation hardness and many others. We review the physical principles of operation of the photodetecting devices based on the group ifi-doped IV-VI including the possibilities of a fast quenching of the persistent photoresponse, construction of the focal-plane array, new readout technique, and others. The advantages of infrared photodetecting systems based on the group IIIdoped IV-VI in comparison with the modem photodetectors are summarized.


2004 ◽  
Vol 46 (1) ◽  
pp. 122-124 ◽  
Author(s):  
K. G. Kristovskii ◽  
A. E. Kozhanov ◽  
D. E. Dolzhenko ◽  
I. I. Ivanchik ◽  
D. Watson ◽  
...  

1996 ◽  
Author(s):  
Alexandr L. Karuzskii ◽  
V. A. Dravin ◽  
A. S. Ignatyev ◽  
A. E. Krapivka ◽  
Yu. A. Mityagin ◽  
...  

2017 ◽  
Vol 13 (S334) ◽  
pp. 242-247
Author(s):  
Luca Pasquini ◽  
B. Delabre ◽  
R. S. Ellis ◽  
J. Marrero ◽  
L. Cavaller ◽  
...  

AbstractWe present the concept of a novel facility dedicated to massively-multiplexed spectroscopy. The telescope has a very wide field Cassegrain focus optimised for fibre feeding. With a Field of View (FoV) of 2.5 degrees diameter and a 11.4m pupil, it will be the largest etendue telescope. The large focal plane can easily host up to 16.000 fibres. In addition, a gravity invariant focus for the central 10 arc-minutes is available to host a giant integral field unit (IFU). The 3 lenses corrector includes an ADC, and has good performance in the 360-1300 nm wavelength range. The top level science requirements were developed by a dedicated ESO working group, and one of the primary cases is high resolution spectroscopy of GAIA stars and, in general, how our Galaxy formed and evolves. The facility will therefore be equipped with both, high and low resolution spectrographs. We stress the importance of developing the telescope and instrument designs simultaneously. The most relevant R&D aspect is also briefly discussed.


2003 ◽  
Author(s):  
A. M. Filachev ◽  
V. P. Ponomarenko ◽  
I. I. Taubkin ◽  
M. B. Ushakova

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