Boron Doping Effects on the Structural and Optical Properties of Sol-Gel Transparent ZnO Films

2013 ◽  
Vol 547 ◽  
pp. 145-151 ◽  
Author(s):  
Sirirat T. Rattanachan ◽  
P. Krongarrom ◽  
Thipwan Fangsuwannarak

In this study, undoped and B-doped ZnO thin films were successfully deposited on the glass substrates by a sol-gel spin coating method. The influence of doping concentrations and the annealing temperature effects on the structural and optical properties of ZnO thin films were investigated. All of films exhibited polycrystalline structure, with a preferential growth along the c-axis plane and the optical transparency with visible transmittance was higher than 90%. The crystallite size was calculated using a well-known Scherrer’s formula and found to be in the range of 11-18 nm. The optical band gap of these films were determined and compared with those obtained for undoped ZnO thin film.

2007 ◽  
Vol 21 (31) ◽  
pp. 5257-5263 ◽  
Author(s):  
S. W. XUE ◽  
X. T. ZU ◽  
X. XIANG ◽  
M. Y. CHEN ◽  
W. G. ZHENG

ZnO thin films were first prepared by the sol–gel process, and then Ge ions were implanted into the ZnO films. The effects of ion implantation on the structural and optical properties of the ZnO films were investigated by X-ray diffraction, photoluminescence (PL), and optical transmittance measurements. Measurement results showed that the intensity of the (002) diffraction peak was decreased and the full width at half maximum was narrowed. PL emission was greatly extinguished after Ge ion implantation. Both the near band edge (NBE) excitonic UV emission at 391 nm and the defect related deep level emission centered at 470 nm in the visible region were decreased after Ge ion implantation. NBE peak and the absorption edge were observed to have a blueshift toward higher energy.


2012 ◽  
Vol 19 (02) ◽  
pp. 1250018
Author(s):  
V. LAKSHMIPRIYA ◽  
B. NATARAJAN ◽  
N. JEYAKUMARAN ◽  
N. PRITHIVIKUMARAN

ZnO thin films were prepared onto the glass substrates by the sol–gel spin coating method for various Zn concentrations and at different spin rates. The influence of concentration of zinc and spin rate on the structural and optical properties of the ZnO thin films were investigated. It was observed that the zinc concentration and spin rate influence the grain size and morphology of the ZnO thin films. The optical band gap energy was found to increase with decrease of Zn concentration and increase in spin speed. The photoluminescence peaks show green radiation at ~485 nm. It was also observed that the enrichment of zinc and variation in spin speed influence the intensity of luminescence peaks.


2020 ◽  
Vol 38 (1) ◽  
pp. 17-22
Author(s):  
G Balakrishnan ◽  
Vivek Sinha ◽  
Yogesh Palai Peethala ◽  
Manoj Kumar ◽  
R.J. Golden Renjith Nimal ◽  
...  

AbstractZinc oxide (ZnO) thin films were deposited on Si (1 0 0) and glass substrates by sol-gel spin coating technique. Zinc acetate dihydrate, monoethanolamine and isopropanol were used as the sources for precursor solution and the resulting gel was used for the preparation of ZnO thin films. The films were annealed at different temperatures (100 °C to 500 °C) and the effect of annealing on the structural and optical properties was investigated. X-ray diffraction (XRD) and UV-Vis spectroscopy were used for the analysis of the films. The XRD results indicated the polycrystalline hexagonal structure of the ZnO films with (0 0 2) orientation. The optical properties of the films were studied using UV-Vis spectrophotometer in the wavelength range of 190 – 1100 nm. The optical characterization of the ZnO thin films showed the high transmittance of ~90 % for the films annealed at 400 °C. The films showed the absorbance ~360 – 390 nm and bandgap values of 3.40 – 3.10 eV, depending on the annealing temperature of the films.


2012 ◽  
Vol 430-432 ◽  
pp. 310-314 ◽  
Author(s):  
Wei Wang ◽  
Wei Meng ◽  
Ming Hui Liu ◽  
Xin Bo Wang

Na-doped ZnO thin films were deposited on microscope glass substrates by sol-gel spin coating method, the Na/Zn ratio were 0at.%, 5at.%, 7.5at.%, 10at.%, 15at.%. The crystal structures, surface morphology, and optical properties were analyzed by X-ray diffraction, scanning electron microscopy, ultraviolet–visible spectrophotometer, respectively. The results show that all the films are preferentially oriented along the c-axis perpendicular to the substrate surface. With the increase of the doping concentration, the roughness of the surfaces decrease and grain size grows from 17.1nm to 21.7nm, the sample with 10at.% Na exhibits best crystallinity and has lowest strain along the c-axis. The average optical transparency of the samples is higher than 70%, optical band gaps are between 3.213eV and 3.289eV.


2015 ◽  
Vol 1109 ◽  
pp. 99-103 ◽  
Author(s):  
K.L. Foo ◽  
U. Hashim ◽  
Chun Hong Voon ◽  
M. Kashif

Transparent semiconductor ZnO thin films deposited on interdigitated electrode (IDE) substrate substrates were obtained by low-cost sol-gel method. The coated ZnO films were annealed in furnace at 500°C for 2 hours. The influence of surface morphologies, crystallization and optical properties was investigated. The structural properties of the annealed ZnO thin films were examined with FESEM and AFM. XRD result shows that all polycrystalline ZnO thin film after annealing have the orientation along the (002) plane. Both FESEM and XRD results revealed that ZnO thin films were composed of hexagonal ZnO crystals in nanoscale dimensions. Moreover, UV-Vis was employed to study the optical properties of the ZnO films. Besides that, the deposited ZnO thin film will further use for pH by I-V curve tracer.


2014 ◽  
Vol 318 ◽  
pp. 309-313 ◽  
Author(s):  
Ebru Gungor ◽  
Tayyar Gungor ◽  
Deniz Caliskan ◽  
Abdullah Ceylan ◽  
Ekmel Ozbay

Sign in / Sign up

Export Citation Format

Share Document