CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY OF DEFORMED MICROSTRUCTURES IN MONOLITHIC AND MULTILAYER TiSiN/TiN FILMS

2010 ◽  
Vol 24 (01n02) ◽  
pp. 18-25 ◽  
Author(s):  
P. C. WO ◽  
P. R. MUNROE ◽  
Z. F. ZHOU ◽  
Z. H. XIE ◽  
K. Y. LI
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Multilayer Coating ◽  
Multilayer Coatings ◽  
Shear Cracks ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Columnar Grains ◽  
Edge Cracks

The deformation microstructures generated by nanoindentation of multilayer coatings consisting of TiSiN layers alternating with ten TiN interlayers, were examined by cross-sectional transmission electron microscopy (XTEM). Two multilayered coatings were studied: a thin TiSiN coating interlayered with thick TiN interlayer and a thick TiSiN coating alternated with thin TiN layers. A monolithic TiSiN coating was also examined for comparison. Surface morphology of the samples was found to be variable. Both surface roughness and coating hardness increase with the thickness of the outermost TiSiN layer. All samples show columnar structures, and for the multilayer coatings, epitaxial growth of these columnar grains through the TiSiN / TiN multilayers was observed. Stair-shaped shear cracks can be seen in the multilayer coating alternated with thick TiN interlayers, whereas radial and edge cracks are observed in the coating multilayered with thin TiN layers and in the monolithic coating. TEM analysis also suggests that columnar grains help to resist the initiation of edge cracks. Compared to other studies on similar coating systems with fewer periods of interlayers, the deformation observed here appears less severe, indicating an improvement in the strength of the coating through increasing the number of interlayers.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Nanoindentation in Tin/Nbn Multilayers and Thin Films Examined Using Transmission Electron Microscopy

1999 ◽  
Vol 5 (S2) ◽  
pp. 776-777
Author(s):  
S.J. Lloyd ◽  
J.E. Pitchford ◽  
J.M. Molina-Aldareguia ◽  
Z.H. Barber ◽  
M.G. Blamire ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Deformation Structure ◽  
Tem Analysis ◽  
Repeat Distance ◽  
Cross Sectional ◽  
Thin Coatings ◽  
Transmission Electron ◽  
Salt Structure ◽  
Interesting System

Nanoindentation allows the hardness of thin coatings and synthetic multilayer structures to be measured, since indentation depths can be as little as a few 10s of nm. In combination with the cross-sectional transmission electron microscopy (TEM) analysis described here it is possible to observe the deformation structure under an indent, and potentially to understand deformation mechanisms on a nm scale in a wide variety of materials. Synthetic multilayers are a particularly interesting system to investigate. Variations in hardness with the multilayer compositional repeat distance (A) have been reported for several systems. The highest hardnesses, which are in excess of what a simple “rule of mixtures” would predict, occur in nitride multilayers at A ∼5nm. Here we present some preliminary results showing the deformation structure in both a monolithic NbN film and a TiN/NbN multilayer in which both components have the rQck salt structure with lattice parameters 0.424nm (TiN) and 0.439nm (NbN).

The Formation and Cathodoluminescence Activity of Buffer Layer Edge Dislocations in In0.12Ga0.88As/GaAs Heterostructures

1987 ◽  
Vol 104 ◽  
Author(s):  
E. A. Fitzgerald ◽  
P. D. Kirchner ◽  
G. D. Petit ◽  
J. M. Woodall ◽  
D. G. Ast
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Buffer Layer ◽  
Defect Structure ◽  
Radiative Recombination ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Gaas Buffer Layer ◽  
Edge Dislocations

ABSTRACTThe defect structure of lattice-mismatched one micron In0.12 Ga0.88As epilayers on (001) GaAs was studied with scanning cathodoluminescence (CL) and transmission electron microscopy (TEM). CL examination of the GaAs buffer layer revealed the formation of a segmented network of defects below the interface. Cross-sectional TEM analysis shows that these defects are dislocation half-loops extending from the interface, and the vast majority of these loops lie on the GaAs side of the interface. The dislocations in the GaAs buffer layer were determined to be edge dislocations. Thus, CL images show that edge dislocations in this system are centers for non-radiative recombination. We propose that two 60° dislocations with opposite screw and interface tilt components can glide into the buffer layer to form edge dislocations. Potential energy plots for 60° dislocations near the interface and interacting with interface dislocations supports this model.

Microstructure of laser-irradiated, conducting Kapton polyimide

1995 ◽  
Vol 53 ◽  
pp. 502-503
Author(s):  
D. L. Callahan ◽  
Z. Ball ◽  
H. M. Phillips ◽  
R. Sauerbrey
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Cross Sectional ◽  
General Utility ◽  
Transmission Electron ◽  
Considerable Debate ◽  
Potential Applications

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.

Transmission Electron Microscopy of an Aluminum-Silver-Stainless Steel Solid State Bond

1985 ◽  
Vol 43 ◽  
pp. 172-173
Author(s):  
M. J. Carr ◽  
J. F. Shewbridge ◽  
T. O. Wilford
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Specimen Preparation ◽  
Dimensional Control ◽  
Tem Analysis ◽  
Metal Parts ◽  
Dissimilar Metal ◽  
Transmission Electron ◽  
Short Time

Strong solid state bonds are routinely produced between physical vapor deposited (PVD) silver coatings deposited on sputter cleaned surfaces of two dissimilar metal parts. The low temperature (200°C) and short time (10 min) used in the bonding cycle are advantageous from the standpoint of productivity and dimensional control. These conditions unfortunately produce no microstructural changes at or near the interface that are detectable by optical, SEM, or microprobe examination. Microstructural problems arising at these interfaces could therefore easily go undetected by these techniques. TEM analysis has not been previously applied to this problem because of the difficulty in specimen preparation. The purpose of this paper is to describe our technique for preparing specimens from solid state bonds and to present our initial observations of the microstructural details of such bonds.

Ion thinning of integrated circuit transverse specimens for transmission electron microscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1426-1427
Author(s):  
F. Shaapur
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Integrated Circuit ◽  
Substrate Surface ◽  
Homogeneous Material ◽  
Material System ◽  
Ion Milling ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Motion Profile

Non-uniform ion-thinning of heterogenous material structures has constituted a fundamental difficulty in preparation of specimens for transmission electron microscopy (TEM). A variety of corrective procedures have been developed and reported for reducing or eliminating the effect. Some of these techniques are applicable to any non-homogeneous material system and others only to unidirectionalfy heterogeneous samples. Recently, a procedure of the latter type has been developed which is mainly based on a new motion profile for the specimen rotation during ion-milling. This motion profile consists of reversing partial revolutions (RPR) within a fixed sector which is centered around a direction perpendicular to the specimen heterogeneity axis. The ion-milling results obtained through this technique, as studied on a number of thin film cross-sectional TEM (XTEM) specimens, have proved to be superior to those produced via other procedures.XTEM specimens from integrated circuit (IC) devices essentially form a complex unidirectional nonhomogeneous structure. The presence of a variety of mostly lateral features at different levels along the substrate surface (consisting of conductors, semiconductors, and insulators) generally cause non-uniform results if ion-thinned conventionally.

A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

2002 ◽  
Author(s):  
Chin Kai Liu ◽  
Chi Jen. Chen ◽  
Jeh Yan.Chiou ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Sensitive Issue ◽  
Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

2010 ◽  
Vol 16 (6) ◽  
pp. 662-669 ◽  
Author(s):  
S. Simões ◽  
F. Viana ◽  
A.S. Ramos ◽  
M.T. Vieira ◽  
M.F. Vieira
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Multilayer Thin Films ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

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