Effects of an applied electric field on the binding energy of shallow donor impurities in GaAs low-dimensional systems

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1–2) transition and the binding energy of the shallow-donor impurities in a Ga 1-x In x N y As 1-y/ GaAs / Al 0.3 Ga 0.7 As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.

Download Full-text

Binding Energy of the Ground and First Few Excited States of a Shallow-Donor Impurity in Rectangular-Cross-Sectional Area GaAs Quantum-Well Wires under Applied Electric Field

physica status solidi (b) ◽

10.1002/(sici)1521-3951(199812)210:2<731::aid-pssb731>3.0.co;2-x ◽

1998 ◽

Vol 210 (2) ◽

pp. 731-736 ◽

Cited By ~ 16

Author(s):

A. Montes ◽

C.A. Duque ◽

N. Porras-Montenegro

Keyword(s):

Binding Energy ◽

Electric Field ◽

Quantum Well ◽

Excited States ◽

Applied Electric Field ◽

Shallow Donor ◽

Sectional Area ◽

Donor Impurity ◽

Cross Sectional ◽

Quantum Well Wires

Download Full-text

SHALLOW DONOR IMPURITY BINDING ENERGY IN A QUANTUM WIRE WITHIN AN ELECTRIC FIELD

Modern Physics Letters B ◽

10.1142/s0217984906011505 ◽

2006 ◽

Vol 20 (21) ◽

pp. 1351-1356 ◽

Cited By ~ 5

Author(s):

CHAO-JIN ZHANG ◽

KANG-XIAN GUO ◽

HONG-JING XIE ◽

RUI-QIANG WANG

Keyword(s):

Binding Energy ◽

Electric Field ◽

Quantum Wire ◽

Applied Electric Field ◽

Shallow Donor ◽

Applied Electric Field Strength ◽

Square Well ◽

Geometrical Effects ◽

Theoretical Results ◽

Good Agreement

The method of two variational wavefunctions has been used to calculate theoretically the impurity binding energy in a GaAs/Ga 1-x Al x As quantum wire. The effective potential in the quantum wire consists of a parabolic well potential in the x-direction and a square well potential in the z-direction with an applied electric field. We can obtain the results which are in good agreement with previous theoretical results. Furthermore, the impurity binding energy in the quantum wire is sensitive to the geometrical effects and the applied electric field strength F.

Download Full-text

BINDING ENERGY FOR A SHALLOW DONOR IMPURITY IN GaAs–(Ga, Al)As QUANTUM WELLS UNDER HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD

Surface Review and Letters ◽

10.1142/s0218625x02004347 ◽

2002 ◽

Vol 09 (05n06) ◽

pp. 1753-1756 ◽

Cited By ~ 23

Author(s):

A. MONTES ◽

A. L. MORALES ◽

C. A. DUQUE

Keyword(s):

Wave Function ◽

Hydrostatic Pressure ◽

Binding Energy ◽

Electric Field ◽

Quantum Wells ◽

Applied Electric Field ◽

Shallow Donor ◽

Donor Impurity ◽

External Hydrostatic Pressure ◽

Mass Approximation

The present work investigates the effects of the hydrostatic pressure and the external applied electric field on the binding energy for shallow donor impurities in GaAs–Ga 1 - x Al x As quantum wells. The effective mass approximation is used and a trial envelope wave function is adopted for the impurity carrier. For fixed well width and applied electric field, the binding energy of the shallow donor impurity is enhanced by increasing the external hydrostatic pressure, and for fixed well width and hydrostatic pressure, the binding energy decreases by increasing the external electric field.

Download Full-text

Hydrogenic-Donor Impurity Binding Energy Dependence of the Electric Field in GaAs/AlxGa1−xAs Quantum Rings

Journal of Nanomaterials ◽

10.1155/2013/240563 ◽

2013 ◽

Vol 2013 ◽

pp. 1-7 ◽

Cited By ~ 1

Author(s):

Guangxin Wang ◽

Xiuzhi Duan ◽

Wei Chen

Keyword(s):

Wave Function ◽

Binding Energy ◽

Electric Field ◽

Applied Electric Field ◽

Donor Impurity ◽

Electronic Wave ◽

Hydrogenic Donor Impurity ◽

Hydrogenic Donor ◽

Electronic Wave Function ◽

Radial Thickness

Using a variational method with two-parameter trial wave function and the effective mass approximation, the binding energy of a donor impurity in GaAs/AlxGa1−xAs cylindrical quantum ring (QR) subjected to an external field is calculated. It is shown that the donor impurity binding energy is highly dependent on the QR structure parameters (radial thickness and height), impurity position, and external electric field. The binding energy increases inchmeal as the QR parameters (radial thickness and height) decrease until a maximum value for a central impurity and then begins to drop quickly. The applied electric field can significantly modify the spread of electronic wave function in the QR and shift electronic wave function from the donor position and then leads to binding energy changes. In addition, results for the binding energies of a hydrogenic donor impurity as functions of the impurity position and applied electric field are also presented.

Download Full-text

THE EFFECTS OF HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD ON SHALLOW DONOR IMPURITIES IN GaAs/GaAlAs GRADED QUANTUM WELL

Surface Review and Letters ◽

10.1142/s0218625x05006871 ◽

2005 ◽

Vol 12 (02) ◽

pp. 155-159 ◽

Cited By ~ 2

Author(s):

E. KASAPOGLU ◽

H. SARI ◽

I. SÖKMEN

Keyword(s):

Hydrostatic Pressure ◽

Binding Energy ◽

Electric Field ◽

Quantum Well ◽

Quantum Confinement ◽

Variational Approach ◽

Shallow Donor ◽

Impurity Position ◽

Donor Binding Energy ◽

Electric Field Direction

Using a variational approach, we have investigated the effects of the hydrostatic pressure, the well dimension, impurity position and electric field direction on the binding energy of shallow donor impurities in GaAs/GaAlAs graded quantum well (GQW). We have found that the changes in donor binding energy in GQW strongly depend not only on the quantum confinement, but also on the hydrostatic pressure, on the direction of the electric field and on the impurity position.

Download Full-text