scholarly journals Negative differential resistance and magnetoresistance in zigzag borophene nanoribbons

2018 ◽  
Vol 32 (04) ◽  
pp. 1850033 ◽  
Author(s):  
Jiayi Liu ◽  
Jiaxin Wu ◽  
Changpeng Chen ◽  
Lu Han ◽  
Ziqing Zhu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
First Principles Calculations ◽  
Maximum Value ◽  
Current Voltage ◽  
Magnetic Transport ◽  
Filtering Effect ◽  
Bias Range ◽  
Opposite Magnetization

Since borophene has been grown experimentally, its extraordinary characteristics have attracted more and more attentions. In this paper, we construct pristine zigzag-edged borophene nanoribbons (ZBNRs) of different widths to study the transport properties, using the first-principles calculations. The differences of the quantum transport properties are discussed, where even-N ZBNRs and odd-N ZBNRs have different current–voltage relationships. Especially, the negative differential resistance (NDR) can be observed within certain bias range in 5-ZBNR and 7-ZBNR, while 6-ZBNR behaves like a metal whose current rises with the increase of the voltage. Moreover, borophene nanoribbon shows interesting magnetic transport properties. The spin-filtering effect can be revealed when the two electrodes have opposite magnetization directions. Besides, the magnetoresistance effect appears to exist in even-N ZBNRs and the maximum value can reach 70%. The mechanisms of these phenomena are proposed in detail.

Length-dependent rectification and negative differential resistance in heterometallic n-alkanedithiol junctions

RSC Advances ◽  
2015 ◽  
Vol 5 (18) ◽  
pp. 13917-13922 ◽  
Author(s):  
Jian Shao ◽  
X. Y. Zhang ◽  
Yue Zheng ◽  
Biao Wang ◽  
Yun Chen
Keyword(s):  
Transport Properties ◽  
First Principles ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
First Principles Calculations

The transport properties of heterometallic n-alkanedithiol junctions were investigated via first-principles calculations.

Tuning the electronic and quantum transport properties of nitrogenated holey graphene nanoribbons

2017 ◽  
Vol 5 (45) ◽  
pp. 11856-11866 ◽  
Author(s):  
Aldilene Saraiva-Souza ◽  
Manuel Smeu ◽  
José Gadelha da Silva Filho ◽  
Eduardo Costa Girão ◽  
Hong Guo
Keyword(s):  
Transport Properties ◽  
Quantum Transport ◽  
Negative Differential Resistance ◽  
Graphene Nanoribbons ◽  
Differential Resistance ◽  
Linear Current ◽  
Current Voltage ◽  
Non Linear ◽  
Current Voltage Characteristics ◽  
Peak To Valley Ratio

Strong negative differential resistance (NDR) behavior with a remarkable current peak-to-valley ratio for armchair C2N-hNRs and non-linear current–voltage characteristics for zigzag C2N-hNRs.

scholarly journals Symmetric Negative Differential Resistance in a Molecular Nanosilver Chain

2013 ◽  
Vol 2013 ◽  
pp. 1-5
Author(s):  
Tae Kyung Kim ◽  
Hoi Ri Moon ◽  
Byung Hoon Kim
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
The Self ◽  
Electrical Transport Properties ◽  
Peak Voltage ◽  
Capacitance Effect ◽  
Current Voltage ◽  
Current Voltage Characteristics

The electrical transport properties of the molecular nanosilver chain have been investigated. We observed the symmetric negative differential resistance (NDR) in the current-voltage characteristics. The peak voltage (VP) increased but the peak current (IP) decreased upon cooling. The self-capacitance effect of the silver chain crystal is suggested to explain this unconventional NDR phenomenon.

Effect of Si doping on the electronic properties of BN monolayer

Nanoscale ◽  
2014 ◽  
Vol 6 (10) ◽  
pp. 5526-5531 ◽  
Author(s):  
Sanjeev K. Gupta ◽  
Haiying He ◽  
Douglas Banyai ◽  
Mingsu Si ◽  
Ravindra Pandey ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Properties ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Significant Enhancement ◽  
Voltage Response ◽  
Si Doping ◽  
Current Voltage ◽  
Si Doped

Unique electronic and transport properties were predicted for Si-doped BN monolayer consisting of a significant enhancement of current at the dopant site, diode-like asymmetric current–voltage response, and negative differential resistance.

Study on Spin Transport Properties in Transition Metal Atoms Interfered Alpha-Graphyene Nanoribbon Systems

2014 ◽  
Vol 1015 ◽  
pp. 389-392
Author(s):  
Y.H. Zhou ◽  
L.L. Zhou ◽  
X.H. Qiu ◽  
Y.L. Peng
Keyword(s):  
Transition Metal ◽  
Transport Properties ◽  
First Principles ◽  
Differential Resistance ◽  
First Principles Calculations ◽  
Metal Atoms ◽  
Transition Metal Atoms ◽  
Filtering Effect ◽  
Proper Analysis ◽  
Spin Filtering

The transport properties of transition metal atoms interfered alpha-graphyne nanoribbon systems are investigated by first-principles calculations combined with the Keldysh nonequilibrium Green’s method. In all, five types of configurations are considered. We find that intervention of three Cr atom in alpha-graphyne nanoribbon systems decreases the conductivity of the system. Further study show that the magnetic direction of the electrode infulence the spin filtering effect greatly, while the ralative magnetic direction of the three transition Cr atoms have little effect on the transport properties. At finite bias window, negative differential resistance happens. Proper analysis are given to explain the spin filtering phenonmenon and the different transport properties via transmission coefficient and projected density of states.

Negative differential resistance, perfect spin-filtering effect and tunnel magnetoresistance in vanadium-doped zigzag blue phosphorus nanoribbons

2018 ◽  
Vol 20 (32) ◽  
pp. 21105-21112 ◽  
Author(s):  
Si-Cong Zhu ◽  
Shun-Jin Peng ◽  
Kai-Ming Wu ◽  
Cho-Tung Yip ◽  
Kai-Lun Yao ◽  
...  
Keyword(s):  
Transport Properties ◽  
Quantum Transport ◽  
First Principles ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Tunnel Magnetoresistance ◽  
Filtering Effect ◽  
Spin Filtering

We investigate the electronic and transport properties of vanadium-doped zigzag blue phosphorus nanoribbons by first-principles quantum transport calculations.

Significant tunneling magnetoresistance and excellent spin filtering effect in CrI3-based van der Waals magnetic tunnel junctions

2020 ◽  
Vol 22 (26) ◽  
pp. 14773-14780 ◽  
Author(s):  
Zhi Yan ◽  
Ruiqiang Zhang ◽  
Xinlong Dong ◽  
Shifei Qi ◽  
Xiaohong Xu
Keyword(s):  
Transport Properties ◽  
Negative Differential Resistance ◽  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Differential Resistance ◽  
Tunneling Magnetoresistance ◽  
Positive Bias ◽  
Filtering Effect ◽  
Spin Filtering

The transport properties of CrI3/h-BN/n·CrI3 (n = 1, 2, 3, 4) MTJs under positive bias voltages exhibit an interesting odd-even effect. Significant tunneling magnetoresistance, a perfect spin filtering effect and remarkable negative differential resistance were obtained.

Spintronic Transport Performances of VSe2 Nanoribbons

2020 ◽  
Vol 15 (2) ◽  
pp. 269-275
Author(s):  
Wei-Chao Zhang ◽  
Wei-Feng Sun
Keyword(s):  
Bias Voltage ◽  
Electronic Transport ◽  
First Principles ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Transmission Spectra ◽  
First Principles Calculations ◽  
Spintronic Devices ◽  
Crystal Anisotropy ◽  
Filtering Effect

The spin-resolved electronic transport behaviors of VSe2 nanoribbons are theoretically investigated to explore their applications in spintronic devices, employing by the first-principles calculations combined with nonequilibrium Green's function scheme. The band structure, current varying curves with bias voltage between nanoribbon terminal electrodes and electronic transmission spectra of two representative VSe2 nanoribbons along zigzag and armchair crystallographic orientations are calculated respectively. The evident negative differential resistance under the bias voltage of ∼0.6 V for the armchair orientation has been found, implying the significant crystal anisotropy of VSe2 monolayer. Meanwhile, both the VSe2 nanoribbon devices along zigzag and armchair directions represent favorable spin filtering effect, suggesting they are prospective candidates as a multifunction material in spintronic and digital applications.

scholarly journals Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Yipeng An ◽  
Kun Wang ◽  
Shijing Gong ◽  
Yusheng Hou ◽  
Chunlan Ma ◽  
...  
Keyword(s):  
Transport Properties ◽  
Field Effect Transistors ◽  
First Principles Calculations ◽  
Next Generation ◽  
Strong Response ◽  
The Road ◽  
Spin Dependent Transport ◽  
2D Structure ◽  
Filtering Effect ◽  
Dependent Transport

AbstractTwo-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn-junction diodes and sub-3-nm pin-junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip- and nin-junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.

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