Electron Transport Properties of Aluminium Substituted CuTi Amorphous Alloys

1997 ◽  
Vol 11 (03) ◽  
pp. 303-313 ◽  
Author(s):  
A. K. Bhatnagar ◽  
G. Fritsch ◽  
D. G. Naugle ◽  
R. Haberkern ◽  
M. Kandlbinder ◽  
...  

Room temperature electrical resistivity (ρ), temperature coefficient of resistivity (α) and Hall coefficient (R H ) of ( Cu 1-y Ti y)1-x Al x amorphous alloys, where y=0.36, 0.50 and 0.64 and x=0, 0.05 and 0.10 are presented. The low temperature dependence of resistivity and magnetoresistivity of a-( Cu 0.36 Ti 0.64)1-x Al x are also presented and discussed qualitatively in terms of quantum corrections. It is found that the addition of Al in a- Cu 0.36 Ti 0.64 alloy decreases the spin-orbit scattering time τ so .

1998 ◽  
Vol 10 (45) ◽  
pp. 10193-10206
Author(s):  
Nobuhiko Takeichi ◽  
Hirokazu Sato ◽  
Toshiharu Fukunaga ◽  
Uichiro Mizutani

1996 ◽  
Vol 03 (01) ◽  
pp. 1133-1136
Author(s):  
H. KASAHARA ◽  
T. SHIKATA ◽  
K. YAMAMOTO

We investigated electron transport in fine-particle films of Au prepared onto Si native oxide. Electron transport measurements and TEM observations were carried out for as-deposited and after thermal treatment of the films in air. We observed the anomalous resistance increases in as-deposited fine-particle films of Au and obtained α T =4.5. After 150°C thermal treatment in air, however, these anomalous resistance increases in the Au films disappeared and its topography appeared on the TEM images drastically changed into percolative structure. We found that the size of the Au fine particles causes anomalous resistance increase at low temperature.


Author(s):  
Yu. V. Funtikov ◽  
O. V. Prokopjev ◽  
N. O. Khmelevsky ◽  
O. V. Ilyukhina ◽  
V. S. Khmelevskaya ◽  
...  

2000 ◽  
Vol 623 ◽  
Author(s):  
P. Johnsson ◽  
S.I. Khartsev ◽  
A.M. Grishin

AbstractA sequence of epitaxial La0.75Sr0.25MnO3 (LSMO) films with thickness ranging from 2400 to 50 Å have been prepared by pulsed laser deposition onto (110) SrTiO3 (STO) substrates. Compared with oar previous results on LSMO/STO(100) films [1], films on STO(110) substrates exhibit strong, anisotropy of electrical resistivity p. p measured in [110] direction is comparable with the resistivity of LSMO/STO(100) films while p in [001] direction is 25 times higher than in STO(100) case. The maximum value of anisotropy parameter p[001]/p[110] = 25 is reached for thick films at the low temperature of 90 K. Distinct crossover from 3D to 2D case has been observed. For thick films anisotropy monotonously decreases with the temperature increase. Films thinner than 200 Å exhibit a maximum of anisotropy parameter, which shifts to lower temperatures with the thickness decrease. The maximum temperature coefficient of resistivity (TCR) was found to be around 2% if measured along [001] direction and about 50 % higher in [11O] inplane direction. We explain the observed effects in terms of the crystalline properties of fabricated films.


2013 ◽  
Vol 27 (07) ◽  
pp. 1361003
Author(s):  
ZHONGHUI XU ◽  
XIANBO XIAO ◽  
YUGUANG CHEN

We studied theoretically the spin-dependent electron transport properties of a three-terminal nanostructure proposed by Xiao and Chen [J. Appl. Phys.1, 108 (2010)]. The spin-resolved recursive Green's function method is used to calculate the three-terminal spin-polarization. We focus on the influence both of the structural parameters and Rashba spin–orbit coupling (SOC) strength in the investigated system. It is shown that the spin-polarization is still a reasonable value for being observable in experiment with small Rashba SOC strength and longer length of the wide region in the investigated system. The underlying physics is revealed to originate from the effect of SOC-induced effective magnetic field at the structure-induced Fano resonance. This length of the middle wide region in three-terminal nanostructure can be more easily fabricated experimentally.


2007 ◽  
Vol 539-543 ◽  
pp. 2100-2105
Author(s):  
Takeshi Fukami ◽  
A. Nanbu ◽  
M. Fukatani ◽  
Daisuke Okai ◽  
Y. Akeno ◽  
...  

In order to examine mechanical properties of a metallic glass Zr50Cu40Al10 in low temperature below room temperature, the temperature T dependence of mechanical resonance of ultrasonic wave are measured. The mechanical resonance frequency in an as-quenched sample shows an abrupt increase at 200K for longitudinal wave and 160 K for transverse wave with decreasing T. After this abrupt increase, the sound propagation cannot be detected below these temperatures but the wave propagation is restored with increasing T and there is an abrupt decrease at 260K for the both wave modes. The similar hysteresis is observed in temperature dependence of the electrical resistivity. These suggest a kind of structure instability of Zr50Cu40Al10 in low temperature region.


1994 ◽  
Vol 375 ◽  
Author(s):  
Simon A. Morton ◽  
D. Greig ◽  
C. G. H. Walker ◽  
F. Mayeya ◽  
M. A. Howson ◽  
...  

AbstractAmorphous alloys of the binary system CaAl are known to have highly unusual electron transport properties with resistivities up to 450μΣcm and a Hall coefficient that deviates from free electron values at Ca concentrations higher than 45 atomic percent. For amorphous CaMg alloys, on the other hand, the resistivity is very much less and this great difference between the two sets of alloys is not fully understood.We report on the correlation of photoemission and transport measurements made on two sets of amorphous CaAl and CaMg alloys prepared by magnetron sputtering in such a way that we could carry out both sets of measurements within the same UHV system. A special feature of the measurements was that the electrical resistivity was also measured in-situ using a specially designed 4-point probe to check for amorphicity and to compare with transport experiments carried out elsewhere.Photoemission studies were carried out in the energy range 15–50 eV with tuneable synchrotron radiation enabling us to examine the Ca 3p-3d photoemission resonance in detail. The main result from the present series of experiments was that whereas in the CaAl alloys the Fermi edge developed a shoulder at high concentrations of Al, this feature was completely absent in CaMg. At the same time the intensity of the Ca 3p-3d photoemission resonance revealed the presence of d-states in both sets of alloys, indicating that the presence of these dstates cannot, by itself, explain the high resistivity of CaAl.


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