Peculiarities of the Resistive State in Mo/Si Superlattices in a Magnetic Field
The experimental investigations of the transport properties of the superconducting Mo/Si multilayered structures are presented. The observed anisotropy of the electrical resistivity of Mo/Si bridges in a weak magnetic fields H ≲ 5 × 102 Oe is in agreement with the data reported earlier. However, for the Mo/Si microbridges with the width 2 μm in a transverse magnetic field H ≳ 5 × 102 Oe we have found out that the temperature dependence of the in-plane resistivity R(T) demonstrates a sharp change of the resistivity at a certain critical temperature T* < Tc, where Tc is the superconducting transition temperature in a zero magnetic field. For a parallel magnetic field this step-like behavior has not been revealed; we neither observed this effect in wider bridges. The comparison of the transport properties and the nonlinear microwave characteristics is presented. A possible origin of this unusual temperature dependence of R(T) is proposed.