FORTHCOMING GALLIUM NITRIDE BASED POWER DEVICES IN PROMPTING THE DEVELOPMENT OF HIGH POWER APPLICATIONS

2011 ◽  
Vol 25 (02) ◽  
pp. 77-88 ◽  
Author(s):  
H. J. QUAH ◽  
K. Y. CHEONG ◽  
Z. HASSAN
Keyword(s):  
Gallium Nitride ◽  
Band Gap ◽  
High Power ◽  
Gate Dielectric ◽  
Wide Band ◽  
Power Devices ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
High Dielectric ◽  
Hostile Environments

Recent advances in silicon technology have pushed the silicon properties to its theoretical limits. Therefore, wide band gap semiconductors, such as silicon carbide ( SiC ) and gallium nitride ( GaN ) have been considered as a replacement for silicon. The discovery of these wide band gap semiconductors have given the new generation power devices a magnificent prospect of surviving under high temperature and hostile environments. The primary focuses of this review are the properties of GaN , the alternative substrates that can be used to deposit GaN and the substitution of SiO 2 gate dielectric with high dielectric constant (k) film. The future perspectives of AlGaN / GaN heterostructures are also discussed, providing that these structures are able to further enhance the performance of high power devices.

Solid-state lighting with wide band gap semiconductors

2014 ◽  
Vol 1 ◽  
Author(s):  
Faiz Rahman
Keyword(s):  
Gallium Nitride ◽  
Solid State ◽  
Band Gap ◽  
Light Emitting Diodes ◽  
Rapid Development ◽  
Wide Band ◽  
Solid State Lighting ◽  
Wide Band Gap ◽  
Light Emitting ◽  
Wide Band Gap Semiconductors

ABSTRACTLight-emitting diodes (LEDs) made from wide band gap semiconductors, such as gallium nitride, are undergoing rapid development. Solid-state lighting with these LEDs is transforming patterns of energy usage and lifestyle throughout the world.With solid-state lighting gradually taking over from incandescent and fluorescent lighting, light-emitting diodes (LEDs) are very much the focus of research nowadays. This compact review takes a look at LEDs for lighting applications made from wide band gap semiconductors. A very brief history of electric lighting is included for completeness, followed by a description of blue-emitting LEDs that serve as pump sources for all ‘white’ LEDs. This is followed by a discussion on techniques to extract more light from the confines of LED chips through surface patterning. The thermal management of LEDs is perhaps the most important consideration in designing and using LED-based luminaires. This topic is discussed with regard to recent studies on LED reliability. The very promising development of gallium nitride-on-silicon LEDs is examined next followed by a discussion on phosphors for color conversion in LEDs. LED lighting has positively influenced both upscale and downscale illumination markets worldwide. Its societal impact is examined, with the review concluding with a look at efforts to produce LEDs from zinc oxide – a material that holds much promise for the future of solid-state lighting.

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

2018 ◽  
Vol 187-188 ◽  
pp. 66-77 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Patrick Fiorenza ◽  
Giuseppe Greco ◽  
Raffaella Lo Nigro ◽  
Filippo Giannazzo ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Power Devices ◽  
Wide Band Gap ◽  
Emerging Trends ◽  
Wide Band Gap Semiconductors

A pathway to p-type wide-band-gap semiconductors

2009 ◽  
Vol 95 (17) ◽  
pp. 172109 ◽  
Author(s):  
Anderson Janotti ◽  
Eric Snow ◽  
Chris G. Van de Walle
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
P Type

NANOSTRUCTURAL PROPERTIES OF La2O3/HfO2 GATE DIELECTRICS

2012 ◽  
Vol 26 (14) ◽  
pp. 1250080 ◽  
Author(s):  
A. BAHARI ◽  
A. RAMZANNEJAD
Keyword(s):  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Wide Band ◽  
Amorphous Structure ◽  
Boron Diffusion ◽  
Wide Band Gap ◽  
Good Thermal Stability ◽  
Force Microscopy ◽  
Alternative Material ◽  
High Dielectric

There are some issues such as tunneling, leakage currents and boron diffusion through the ultra thin SiO 2 which are threatening ultra thin SiO 2 dielectric as a good gate dielectric. A very obvious alternative material is HfO 2, due to its high dielectric constant, wide band gap and good thermal stability on silicon substrate. We have thus demonstrated a number of processes to synthesize La 2 O 3/ HfO 2 and studied its nano structural properties with using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and atomic force microscopy (AFM) techniques. The obtained results show that La 2 O 3/ HfO 2 (at 500°C with amorphous structure) can be introduced as a good gate dielectric for the future of complementary metal insulator semiconductor (CMIS) device.

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