KINETIC PATHWAY IN STRANSKI-KRASTANOV GROWTH OF Ge ON Si(001)
1990 ◽
Vol 04
(22)
◽
pp. 1379-1384
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Keyword(s):
Scanning tunneling microscopy studies of the kinetic processes involved in the two-dimensional (2D) to three-dimensional (3D) transition in Stranski-Krastanov growth of Ge on Si(001) reveal a novel type of 3D cluster that serves as the kinetic pathway for this transition.
1998 ◽
Vol 05
(03n04)
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pp. 821-832
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1999 ◽
Vol 06
(06)
◽
pp. 1073-1078
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1988 ◽
Vol 60
(18)
◽
pp. 1856-1859
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2004 ◽
Vol 121
(23)
◽
pp. 12005-12009
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Keyword(s):
1989 ◽
Vol 63
(12)
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pp. 1265-1268
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