ON THE ROLE OF KINKS AND STRAIN IN HETEROEPITAXIAL GROWTH: AN STM STUDY

2000 ◽  
Vol 07 (05n06) ◽  
pp. 673-677
Author(s):  
E. LUNDGREN ◽  
M. SCHMID ◽  
G. LEONARDELLI ◽  
A. HAMMERSCHMID ◽  
B. STANKA ◽  
...  

Interlayer diffusion of Co over steps of vacancy islands on the Pt(111) surface as studied by scanning tunneling microscopy is presented. It is demonstrated that Co atoms descend Pt steps by an exchange diffusion process at the step edge with the Pt atoms. Further, the exchange diffusion process is observed to occur at the corners (kinks) of the vacancy islands. The importance of kinks concerning whether the growth mode of a heteropitaxial film is two-dimensional or three-dimensional is demonstrated for the case of thin Co films on Pt(111). We argue that the strain in the Co film is to a large extent responsible for the kink formation.

1998 ◽  
Vol 05 (03n04) ◽  
pp. 821-832 ◽  
Author(s):  
Ayahiko Ichimiya ◽  
Yoriko Tanaka ◽  
Kazuhiko Hayashi

Single silicon islands have been produced on the Si(111)(7 × 7) surface by a scanning tunneling microscope (STM) tip. Thermal relaxation of the isolated islands is observed by temperature variable scanning tunneling microscopy with strong tip effects. The sizes of islands depend on time t with a functional form of (t0-t)α. It is found that α≃2/3 for single bilayer islands, and α≃1 for three-dimensional ones. During the decomposition of three-dimensional islands, step bunching of over-layers takes place, while the islands have certain facets, like a pyramid just after the creation. At the final stages of the three-dimensional island decompositions, two-dimensional ones with 5 × 5 structure always appear. We have found that characteristic 5 × 5 islands with a long lifetime are formed during relaxation, but the 7 × 7 islands have mostlt a short lifetime. Rotation of small islands is also observed during relaxation. We discuss the results in terms of two-dimensional vapor phase processes.


1990 ◽  
Vol 04 (22) ◽  
pp. 1379-1384 ◽  
Author(s):  
Y.-W. MO ◽  
M.G. LAGALLY

Scanning tunneling microscopy studies of the kinetic processes involved in the two-dimensional (2D) to three-dimensional (3D) transition in Stranski-Krastanov growth of Ge on Si(001) reveal a novel type of 3D cluster that serves as the kinetic pathway for this transition.


1999 ◽  
Vol 06 (06) ◽  
pp. 1073-1078 ◽  
Author(s):  
T. NAKAYAMA ◽  
J. ONOE ◽  
K. NAKATSUJI ◽  
J. NAKAMURA ◽  
K. TAKEUCHI ◽  
...  

Irradiation of ultraviolet-visible light onto a C 60 monolayer on [Formula: see text] resulted in a chemical reaction between adjacent C 60 molecules, as confirmed by scanning tunneling microscopy (STM) images. The major photoinduced products were double-bonded (two covalent C–C bonds between molecules) C 60 dimers and linear trimers. We also found single-bonded (single covalent bond between molecules) C 60 dimers and linear trimers, and two-dimensional C 60 oligomers as minor products. Observed atomic geometry of the nonbonding contact between a C 60 dimer (or a trimer) and a neighboring dimer (or a trimer), which are parallel to each other regarding their axes, is different from that reported between C 60 molecules in three-dimensional C 60 crystals, where there is no interaction with a substrate.


Langmuir ◽  
2009 ◽  
Vol 25 (23) ◽  
pp. 13606-13613 ◽  
Author(s):  
Florian Mögele ◽  
Donato Fantauzzi ◽  
Ulf Wiedwald ◽  
Paul Ziemann ◽  
Bernhard Rieger

2000 ◽  
Vol 470 (1-2) ◽  
pp. L7-L12 ◽  
Author(s):  
G. Contini ◽  
V.Di Castro ◽  
A. Angelaccio ◽  
N. Motta ◽  
A. Sgarlata

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