A SPECIAL MODEL ON OPTICAL ABSORPTION OF AMORPHOUS GaAs IN THE FAR-INFRARED RANGE

1999 ◽  
Vol 13 (17) ◽  
pp. 611-615 ◽  
Author(s):  
M. A. GRADO-CAFFARO ◽  
M. GRADO-CAFFARO
Keyword(s):  
Experimental Data ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Far Infrared ◽  
Structural Disorder ◽  
Optical Absorption Coefficient ◽  
Infrared Range ◽  
Electronic Density ◽  
Special Model ◽  
Theoretical Results

The optical absorption coefficient of amorphous GaAs for the far-infrared range is calculated. Results from this calculation are compared with experimental data and with other theoretical results. In our approach, spectrum contribution corresponding to structural disorder is neglected. Moreover, total electronic density of states is determined.

A MODEL FOR OPTICAL ABSORPTION OF AMORPHOUS GaAs IN THE FAR-INFRARED RANGE BY USING AN OPERATIONAL TECHNIQUE

1999 ◽  
Vol 13 (25) ◽  
pp. 919-923 ◽  
Author(s):  
M. A. GRADO-CAFFARO ◽  
M. GRADO-CAFFARO
Keyword(s):  
Optical Absorption ◽  
Absorption Coefficient ◽  
Far Infrared ◽  
Structural Disorder ◽  
Optical Absorption Coefficient ◽  
Infrared Range ◽  
Phonon Density ◽  
Phonon Density Of States ◽  
Operational Technique ◽  
Dynamical Disorder

By considering a sample of amorphous GaAs with a small zone of dynamical disorder, an expression for the optical absorption coefficient and phonon density of states in the low region of the far-infrared range is obtained. To get to this end, absorption corresponding to structural disorder is neglected.

scholarly journals A Short Theoretical Note on Optical Absorption of Amorphous Gallium Arsenide in the Infrared Range

1998 ◽  
Vol 20 (3) ◽  
pp. 139-142 ◽  
Author(s):  
M. A. Grado-Caffaro ◽  
M. Grado-Caffaro
Keyword(s):  
Gallium Arsenide ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Far Infrared ◽  
Optical Absorption Coefficient ◽  
Infrared Range ◽  
Structural Disorders ◽  
Theoretical Results

An approach to determine the optical absorption coefficient of amorphous GaAs in the far infrared range is developed. Results from this approach are compared with experiment and with other theoretical results. In our formulation, contributions corresponding to both dynamical and structural disorders are taken into consideration.

A Semi-Quantitative Analysis of Far-Infrared Absorption in Dynamically Disordered Gallium Arsenide

2003 ◽  
Vol 17 (13n14) ◽  
pp. 783-787 ◽  
Author(s):  
M. A. Grado-Caffaro ◽  
M. Grado-Caffaro
Keyword(s):  
Experimental Data ◽  
Quantitative Analysis ◽  
Optical Absorption ◽  
Density Of States ◽  
Infrared Absorption ◽  
Mathematical Expression ◽  
Far Infrared ◽  
Structural Disorder ◽  
Infrared Range ◽  
Electronic Density

A mathematical expression for the coefficient of optical absorption in amorphous GaAs referred to the far-infrared range is obtained by neglecting the spectrum contribution corresponding to structural disorder. In addition, our results are compared with experimental data and several aspects related to the electronic density of states are discussed.

Mathematical modeling determination coefficient of magneto-optical absorption in semiconductors in presence of external pressure and temperature

2021 ◽  
pp. 2150293
Author(s):  
U. I. Erkaboev ◽  
R. G. Rakhimov ◽  
N. A. Sayidov
Keyword(s):  
Mathematical Modeling ◽  
Experimental Data ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Density Of States ◽  
External Pressure ◽  
Optical Absorption Coefficient ◽  
Dispersion Law ◽  
Different Temperatures ◽  
Simulation Results

The calculation of the coefficients of magneto-optical absorption in semiconductors at different temperatures and pressures is carried out. A formula for the temperature dependence of the oscillations of the combined density of states by the Kane dispersion law is obtained. Mathematical modeling has been carried out that determines the magneto-optical absorption coefficient in semiconductors in the presence of external influences. A new method for determining the magneto-optical absorption coefficient in semiconductors in the presence of pressure and temperature is proposed. The correspondence of simulation results with experimental data is shown.

scholarly journals Оптические свойства спироида C-=SUB=-300-=/SUB=-

2019 ◽  
Vol 89 (2) ◽  
pp. 169
Author(s):  
С.Г. Ястребов ◽  
М.С. Чекулаев ◽  
A. Siklitskaya
Keyword(s):  
Experimental Data ◽  
Matrix Element ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Exchange Interaction ◽  
Optical Absorption Coefficient ◽  
Local Curvature ◽  
The Matrix ◽  
Strong Coupling Method ◽  
Good Agreement

AbstractCalculation results of the electronic spectrum of carbon nanospiroid C_300 are presented. The π-electron structure of the spiroid is calculated using the strong coupling method, in which the matrix element of the exchange interaction of neighboring electrons (the resonance integral) is considered as being dependent on the local curvature of the spiroid surface. The optical absorption coefficient is calculated in the framework of the Tautz model and the result is compared with experimental and astrophysical observational data. The calculated and experimental data are in good agreement.

MAXIMUM DYNAMICAL DISORDER IN AMORPHOUS GaAs

1994 ◽  
Vol 08 (03) ◽  
pp. 169-172 ◽  
Author(s):  
M.A. GRADO CAFFARO ◽  
M. GRADO CAFFARO
Keyword(s):  
Optical Absorption ◽  
Absorption Coefficient ◽  
Density Of States ◽  
Far Infrared ◽  
Conduction Band Edge ◽  
Infrared Range ◽  
Phonon Density ◽  
Phonon Density Of States ◽  
Low Frequencies ◽  
Dynamical Disorder

Maximum dynamical disorder in amorphous gallium arsenide is investigated in a special way. In particular, this maximum disorder refers to distance and it is investigated in the context of optical absorption at very low frequencies in the far-infrared range when the photon energy is larger than 2Ec, Ec being the energy at the conduction band edge. Absorption coefficient is calculated and compared with experimental work. Phonon density of states is also evaluated.

scholarly journals A Brief Study to Clarify Some Aspects Related to Vibrational Density of States for the Far Infrared Range in Amorphous Semiconductors

1998 ◽  
Vol 20 (3) ◽  
pp. 143-145 ◽  
Author(s):  
M. A. Grado-Caffaro ◽  
M. Grado-Caffaro
Keyword(s):  
Optical Absorption ◽  
Density Of States ◽  
Far Infrared ◽  
Structural Disorder ◽  
Amorphous Semiconductors ◽  
Infrared Range ◽  
Phonon Density ◽  
Phonon Density Of States ◽  
Vibrational Density Of States ◽  
Vibrational Density

Phonon density of states of amorphous semiconductors for the far-infrared range is examined analytically. On the basis of this formulation, optical absorption corresponding to structural disorder is evaluated and discussed at the far-infrared range for a-Ge and a-Si.

scholarly journals Optical Absorption Coefficient of a Dispersion of Clusters Composed of a Large Number of Spheres

1987 ◽  
Vol 6 (2) ◽  
pp. 173-181 ◽  
Author(s):  
F. Borghese ◽  
P. Denti ◽  
R. Saija ◽  
G. Toscano ◽  
O. I. Sindoni
Keyword(s):  
Optical Absorption ◽  
Absorption Coefficient ◽  
Optical Absorption Coefficient
Sign in / Sign up

Export Citation Format

Share Document