scholarly journals Оптические свойства спироида C-=SUB=-300-=/SUB=-

2019 ◽  
Vol 89 (2) ◽  
pp. 169
Author(s):  
С.Г. Ястребов ◽  
М.С. Чекулаев ◽  
A. Siklitskaya
Keyword(s):  
Experimental Data ◽  
Matrix Element ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Exchange Interaction ◽  
Optical Absorption Coefficient ◽  
Local Curvature ◽  
The Matrix ◽  
Strong Coupling Method ◽  
Good Agreement

AbstractCalculation results of the electronic spectrum of carbon nanospiroid C_300 are presented. The π-electron structure of the spiroid is calculated using the strong coupling method, in which the matrix element of the exchange interaction of neighboring electrons (the resonance integral) is considered as being dependent on the local curvature of the spiroid surface. The optical absorption coefficient is calculated in the framework of the Tautz model and the result is compared with experimental and astrophysical observational data. The calculated and experimental data are in good agreement.

Mathematical modeling determination coefficient of magneto-optical absorption in semiconductors in presence of external pressure and temperature

2021 ◽  
pp. 2150293
Author(s):  
U. I. Erkaboev ◽  
R. G. Rakhimov ◽  
N. A. Sayidov
Keyword(s):  
Mathematical Modeling ◽  
Experimental Data ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Density Of States ◽  
External Pressure ◽  
Optical Absorption Coefficient ◽  
Dispersion Law ◽  
Different Temperatures ◽  
Simulation Results

The calculation of the coefficients of magneto-optical absorption in semiconductors at different temperatures and pressures is carried out. A formula for the temperature dependence of the oscillations of the combined density of states by the Kane dispersion law is obtained. Mathematical modeling has been carried out that determines the magneto-optical absorption coefficient in semiconductors in the presence of external influences. A new method for determining the magneto-optical absorption coefficient in semiconductors in the presence of pressure and temperature is proposed. The correspondence of simulation results with experimental data is shown.

A SPECIAL MODEL ON OPTICAL ABSORPTION OF AMORPHOUS GaAs IN THE FAR-INFRARED RANGE

1999 ◽  
Vol 13 (17) ◽  
pp. 611-615 ◽  
Author(s):  
M. A. GRADO-CAFFARO ◽  
M. GRADO-CAFFARO
Keyword(s):  
Experimental Data ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Far Infrared ◽  
Structural Disorder ◽  
Optical Absorption Coefficient ◽  
Infrared Range ◽  
Electronic Density ◽  
Special Model ◽  
Theoretical Results

The optical absorption coefficient of amorphous GaAs for the far-infrared range is calculated. Results from this calculation are compared with experimental data and with other theoretical results. In our approach, spectrum contribution corresponding to structural disorder is neglected. Moreover, total electronic density of states is determined.

scholarly journals Optical Absorption Coefficient of a Dispersion of Clusters Composed of a Large Number of Spheres

1987 ◽  
Vol 6 (2) ◽  
pp. 173-181 ◽  
Author(s):  
F. Borghese ◽  
P. Denti ◽  
R. Saija ◽  
G. Toscano ◽  
O. I. Sindoni
Keyword(s):  
Optical Absorption ◽  
Absorption Coefficient ◽  
Optical Absorption Coefficient

Quantitative photopyroelectric out-of-phase spectroscopy of amorphous silicon thin films deposited on crystalline silicon

1991 ◽  
Vol 69 (3-4) ◽  
pp. 317-323 ◽  
Author(s):  
Constantinos Christofides ◽  
Andreas Mandelis ◽  
Albert Engel ◽  
Michel Bisson ◽  
Gord Harling
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Dynamic Range ◽  
Crystalline Silicon ◽  
Optical Absorption Coefficient ◽  
Si Substrates ◽  
Silicon Thin Films ◽  
Background Compensation

A photopyroelectric spectrometer with real-time and(or) self-normalization capability was used for both conventional transmission and thermal-wave spectroscopic measurements of amorphous Si thin films, deposited on crystalline Si substrates. Optical-absorption-coefficient spectra were obtained from these measurements and the superior dynamic range of the out-of-phase (quadrature) photopyroelectric signal was established as the preferred measurement method, owing to its zero-background compensation capability. An extension of a photopyroelectric theoretical model was established and successfully tested in the determination of the optical absorption coefficient and the thermal diffusivity of the sample under investigation. Instrumental sensitivity limits of βt ≈ 5 × 10−3 were demonstrated.

Reversible Changes in the Electronic and Optical Properties of Micro-Crystalline ln2O 3-x: A Comparison with Amorphous In2O3-x

1996 ◽  
Vol 426 ◽  
Author(s):  
B. Pashmakov ◽  
H. Fritzsche ◽  
B. Claflin
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Ultraviolet Light ◽  
Indium Oxide ◽  
Electrical Conductance ◽  
Inert Gas ◽  
Optical Absorption Coefficient ◽  
Electronic And Optical Properties

AbstractThe electrical conductance and optical absorption coefficient of microcrystalline indium oxide (c – In2 O 3-x ) can be changed reversibly by several orders of magnitude by photoreduction and reoxidation. Photoreduction is achieved by exposure to ultraviolet light hv ≥ 3.5eV in vacuum or an inert gas. The effects are similar to those previously observed in amorphous In2 O3-x

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