OPTIMAL DOPANT PROFILING BASED ON ENERGY-TRANSPORT SEMICONDUCTOR MODELS

2008 ◽  
Vol 18 (02) ◽  
pp. 195-214 ◽  
Author(s):  
CONCETTA R. DRAGO ◽  
RENÉ PINNAU
Keyword(s):  
Energy Transport ◽  
Transport Model ◽  
Space Mapping ◽  
Doping Profile ◽  
Design Problems ◽  
Dopant Profiling ◽  
Mapping Algorithm ◽  
Programming Effort ◽  
Model Hierarchy ◽  
Ballistic Diode

We consider optimal design problems for semiconductor devices which are simulated using the energy transport model. We develop a descent algorithm based on the adjoint calculus and present numerical results for a ballistic diode. Furthermore, we compare the optimal doping profile with results computed based on the drift diffusion model. Finally, we exploit the model hierarchy and test the space mapping approach, especially the aggressive space mapping algorithm, for the design problem. This yields a significant reduction of numerical costs and programming effort.

A GLOBALLY CONVERGENT GUMMEL MAP FOR OPTIMAL DOPANT PROFILING

2009 ◽  
Vol 19 (05) ◽  
pp. 769-786 ◽  
Author(s):  
MARTIN BURGER ◽  
RENÉ PINNAU
Keyword(s):  
Design Problem ◽  
Energy Transport ◽  
Transport Model ◽  
Poisson Model ◽  
Drift Diffusion Model ◽  
Drift Diffusion ◽  
Dopant Profiling ◽  
Globally Convergent ◽  
Wide Range ◽  
Energy Transport Model

We study a generalized Gummel iteration for the solution of an abstract optimal semiconductor design problem, which covers a wide range of semiconductor models. The algorithm is to exploit the special structure of the KKT system and it can be interpreted as a descent algorithm for an appropriately defined cost functional. This allows for a convergence proof which does not need the assumption of small biasing voltages. The algorithm is explicitly stated for the (quantum) drift diffusion model, the energy transport model and the microscopic Schrödinger–Poisson model.

Adaptation and validation of a voxel based energy transport model for conifer species

Urban Climate ◽  
2021 ◽  
Vol 39 ◽  
pp. 100967
Author(s):  
Matthew J. Moody ◽  
Brian N. Bailey ◽  
Eric R. Pardyjak ◽  
Walt F. Mahaffee ◽  
Rob Stoll
Keyword(s):  
Energy Transport ◽  
Transport Model ◽  
Conifer Species ◽  
Energy Transport Model

scholarly journals Study on Possible Double Peaks in Cutoff Frequency Characteristics of AlGaAs/GaAs HBTs by Energy Transport Simulation

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 437-442
Author(s):  
T. Okada ◽  
K. Horio
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Energy Transport ◽  
Transport Model ◽  
Cutoff Frequency ◽  
Bipolar Transistors ◽  
Electron Velocity ◽  
Collector Current ◽  
Double Peak ◽  
Double Peaks ◽  
Energy Profiles

By using an energy transport model, we simulate cutoff frequency fT  versus collector current density IC characteristics of npn−n AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with various n−-collector thickness and n−-doping densities. It is found that the calculated fT  characteristics show double peak behavior when the n−- layer is thick enough and the n−-doping is high enough to allow existence of neutral n−- region. The mechanism of the double peak behavior is discussed by studying energy band diagrams, electron-energy profiles and electron-velocity profiles. Particularly, we discuss the origin of the second peak (at higher IC) which is not usually reported experimentally.

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