Growth mode of 2-mercaptobenzoxazole on Cu(100) studied by scanning tunneling microscopy

2000 ◽  
Vol 470 (1-2) ◽  
pp. L7-L12 ◽  
Author(s):  
G. Contini ◽  
V.Di Castro ◽  
A. Angelaccio ◽  
N. Motta ◽  
A. Sgarlata
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Growth Mode ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

ON THE ROLE OF KINKS AND STRAIN IN HETEROEPITAXIAL GROWTH: AN STM STUDY

2000 ◽  
Vol 07 (05n06) ◽  
pp. 673-677
Author(s):  
E. LUNDGREN ◽  
M. SCHMID ◽  
G. LEONARDELLI ◽  
A. HAMMERSCHMID ◽  
B. STANKA ◽  
...  
Keyword(s):  
Diffusion Process ◽  
Scanning Tunneling Microscopy ◽  
Three Dimensional ◽  
Growth Mode ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Heteroepitaxial Growth ◽  
Tunneling Microscopy ◽  
Exchange Diffusion

Interlayer diffusion of Co over steps of vacancy islands on the Pt(111) surface as studied by scanning tunneling microscopy is presented. It is demonstrated that Co atoms descend Pt steps by an exchange diffusion process at the step edge with the Pt atoms. Further, the exchange diffusion process is observed to occur at the corners (kinks) of the vacancy islands. The importance of kinks concerning whether the growth mode of a heteropitaxial film is two-dimensional or three-dimensional is demonstrated for the case of thin Co films on Pt(111). We argue that the strain in the Co film is to a large extent responsible for the kink formation.

AFM and STM Studies of Large Scale Unstable Growth Formed During GaAs (001) Homoepitaxy

1994 ◽  
Vol 340 ◽  
Author(s):  
C. Orme ◽  
M.D. Johnson ◽  
K.T. Leung ◽  
B.G. Orr
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Large Scale ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Growth Mode ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Island Nucleation ◽  
Atomic Force

ABSTRACTAtomic force and scanning tunneling microscopy studies have been performed on GaAs(001) films grown by molecular beam epitaxy. Multilayered mounds are seen to evolve when the growth conditions favor island nucleation. As the epilayer thickness is increased, these features grow in all dimensions but the angle of inclination remains approximately constant at 1°. The mounding does not occur on surfaces grown in stepflow. We propose that the multi-layered features are due to an unstable growth mode which relies on island nucleation and the presence of a step edge barrier.

Scanning Tunneling Microscopy and Spectroscopy of Y-Ba-Cu-O Thin Films Produced by Ion Beam Sputter-Deposition

1992 ◽  
Vol 275 ◽  
Author(s):  
R. C. Chapman ◽  
O. Aucffillo ◽  
D. J. LichtenWalner ◽  
R. P. Adu ◽  
C. N. SobleII ◽  
...  
Keyword(s):  
Thin Films ◽  
Scanning Tunneling Microscopy ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Growth Mode ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Oriented Film ◽  
Oriented Films ◽  
Ion Beam Sputter Deposition

ABSTRACTIon beam sputter-deposition has been used to produce high temperature superconducting (HTSC) thin films with controlled orientation. Room temperature scanning tunneling microscopy (STM) studies of ion beam sputter-deposited Y-Ba-Cu-O thin films indicate that the growth mode depends on whether the films are a- or c-axis oriented. The c-axis oriented films appear to grow by a screw dislocation mechanism, producing layered spirals similar to those observed in films grown by plasma sputtering and laser ablation-deposition. STM images of the a-axis oriented films show a growth mode which appears to produce layered structures perpendicular to the substrate with no spirals. Scanning tunneling spectroscopy (STS) studies of the a- and c-axis oriented films tend to reflect the anisotropy of the Y-Ba-Cu-O structure. Both the c-axis and the a-axis oriented films have semiconducting characteristics, possibly due to a native oxide, with a band gap estimated to be 1.4 eV. The c-axis oriented film, however, exhibits more fine structure in its density of states. This apparent anisotropie band structure reflects the anisotropie Y-Ba-Cu-O microstructure and superconducting characteristics. Investigations with x-ray photcelectron spectroscopy (XPS) establish a substantial chemical difference between the two surfaces inferring more substantial native oxides and air-induced by-products on the a-axis oriented film.

Effects of Si reconstruction on growth mode in studied by scanning tunneling microscopy

1996 ◽  
Vol 357-358 ◽  
pp. 825-829 ◽  
Author(s):  
Akira Uemura ◽  
Akihiro Ohkita ◽  
Hitoshi Inaba ◽  
Shigehiko Hasegawa ◽  
Hisao Nakashima
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Growth Mode ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Surface Structures and Growth Mode of Cu/Si(100) Surfaces Observed by Scanning Tunneling Microscopy

1998 ◽  
Vol 05 (03n04) ◽  
pp. 747-753 ◽  
Author(s):  
H. Itoh ◽  
T. Ann ◽  
T. Kawasaki ◽  
T. Ichinokawa
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Surface Structures ◽  
Growth Mode ◽  
Scanning Tunneling ◽  
Structure Model ◽  
Ordered Structure ◽  
Tunneling Microscopy ◽  
Quenching Temperature ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron

The surface structures and growth mode of the Cu/Si(100) quenched surfaces have been studied by low energy electron diffraction (LEED) and scanning tunneling microscopy (STM), and the superstructures of 6 × 2, 2 × 2 and c(12 × 10) were observed by LEED mixed with 2 × 1. The combination of these structures depends on segregated Cu coverage which is a function of quenching temperature and deposited Cu coverage. These structures have been analyzed by STM and it has been found that 6 × 2 is an ordered structure of Si missing dimmer defects and 2 × 2 and c(12 × 10) are structures formed by Cu–Si layers with incorporation of Cu atoms into the Si(100) surface. The c(12 × 10) structure was analyzed in detail by STM with changing bias voltage, and a result of the structure model of c(12 × 10) has been proposed, The superstructures on the Cu/Si(100) surfaces do not grow homogeneously, and form the combined domains of these structures, Such a growth mode depending on Cu coverage and quenching temperature is discussed referring to the other metal surfaces on Si.

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