A NEGATIVE SPIN-POLARIZATION STRUCTURE OF Ni(110): PROBED BY SPIN- AND ANGLE-RESOLVED PHOTOELECTRON SPECTROSCOPY

2002 ◽  
Vol 09 (02) ◽  
pp. 1287-1290
Author(s):  
S. QIAO ◽  
A. KIMURA ◽  
H. NARITA ◽  
K. YAJI ◽  
E. KOTANI ◽  
...  
Keyword(s):  
Binding Energy ◽  
Spin Polarization ◽  
Brillouin Zone ◽  
Surface State ◽  
Photoelectron Spectroscopy ◽  
Text Line ◽  
Negative Polarization ◽  
Polarization Structure ◽  
Surface Brillouin Zone

We already reported the spin- and angle-resolved photoelectron measurements of Ni(110), Ni (110)- p (2 × 1) O and Ni (110)- c (2 × 2) S along the [Formula: see text] line of the Ni(110) surface Brillouin zone using He I radiation. We found that the structure at about 1.3 eV binding energy showed unusual character near the [Formula: see text] point. The spin polarization of this structure was observed to be negative. After the adsorption of oxygen and sulfur on the Ni(110) surface, the degree of negative spin polarization was found to decrease. To study the property of this state, that it is a bulk or surface-related, and to clarify the origin of the negative polarization, we performed spin- and angle-resolved photoemission measurements for Ni(110) along the LW line of its bulk Brillouin zone. The results show that this negative polarization structure can be attributed to a surface state near the [Formula: see text] point.

ANGLE-RESOLVED PHOTOEMISSION STUDIES OF THE 3C–SiC(001)(2×1) SURFACE

1999 ◽  
Vol 06 (06) ◽  
pp. 1151-1157 ◽  
Author(s):  
L. DUDA ◽  
L. S. O. JOHANSSON ◽  
B. REIHL ◽  
H. W. YEOM ◽  
S. HARA ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Synchrotron Radiation ◽  
Binding Energy ◽  
Brillouin Zone ◽  
Surface State ◽  
Electronic States ◽  
Dangling Bond ◽  
Poor Agreement ◽  
Bond State ◽  
Surface Brillouin Zone

We have investigated the electronic structure of the single-domain 3C–SiC(001)(2×1) using angle-resolved photoemission and synchrotron radiation. Two different surface-state bands are clearly identified within the bulk bandgap. The upper band has a binding energy of 1.4 eV at the center of the surface Brillouin zone (SBZ) and shows a weak dispersion of 0.3 eV in the [Formula: see text] direction, but is nondispersive in the perpendicular direction. It has a polarization dependence suggesting a pz character, as expected for a Si dangling-bond state. The second band is located at 2.4 eV binding energy and is nondispersive. The weak or nonexistent dispersions suggest very localized electronic states at the surface and show poor agreement with calculated dispersions for the proposed models for the 2×1 and c(4×2) reconstructions.

NEW ELECTRONIC STATES ON CLEAN Si(110)-“16×2” SURFACES

1995 ◽  
Vol 02 (05) ◽  
pp. 573-577 ◽  
Author(s):  
A. CRICENTI ◽  
B. NESTERENKO ◽  
P. PERFETTI ◽  
G. LE LAY ◽  
C. SEBENNE
Keyword(s):  
Electronic Properties ◽  
Brillouin Zone ◽  
Photoelectron Spectroscopy ◽  
Structural Model ◽  
Electronic States ◽  
Surface States ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Surface Brillouin Zone ◽  
Differential Reflectivity

The electronic properties of a clean Si (110)-“16×2” surface have been studied by angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) and surface differential reflectivity (SDR). Four surface states have been recognized by ARUPS and their dispersions have been mapped along the main symmetry lines in the surface Brillouin zone. SDR experiments revealed transitions between filled and empty surface states at ~ 1.8, 2.4, and 2.9 eV. The results are explained on the basis of a new structural model of the Si (110)-“16×2” phase.

Surface state at theK¯point of the surface Brillouin zone on Cu{111}

1996 ◽  
Vol 54 (7) ◽  
pp. 5092-5096 ◽  
Author(s):  
Y. Yang ◽  
S. C. Wu ◽  
F. Q. Liu ◽  
K. Ibrahim ◽  
H. J. Qian ◽  
...  
Keyword(s):  
Brillouin Zone ◽  
Surface State ◽  
Surface Brillouin Zone

Surface State at Kmacr- Point of Surface Brillouin Zone on Cu{111} Surface

1996 ◽  
Vol 13 (6) ◽  
pp. 465-468
Author(s):  
Yi Yang ◽  
Feng-qin Liu ◽  
Jin-feng Jia ◽  
Yu-hui Dong ◽  
Kurash Ibrahim ◽  
...  
Keyword(s):  
Brillouin Zone ◽  
Surface State ◽  
Surface Brillouin Zone

The $(\sqrt{3}\times\sqrt{3}){\rm R}30^{\circ}$-Reconstructed 6H–SiC(0001): A Semiconducting Surface

1998 ◽  
Vol 05 (01) ◽  
pp. 193-197 ◽  
Author(s):  
I. Forbeaux ◽  
J.-M. Themlin ◽  
V. Langlais ◽  
L. M. Yu ◽  
H. Belkhir ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Fermi Level ◽  
Brillouin Zone ◽  
Surface State ◽  
Photoemission Spectroscopy ◽  
Metallic Behavior ◽  
Inverse Photoemission ◽  
Surface Brillouin Zone ◽  
Inverse Photoemission Spectroscopy ◽  
Good Agreement

k//-resolved inverse-photoemission spectroscopy of the [Formula: see text] reconstruction of 6H–SiC(0001) reveals a sharp surface state U located 1.10±0.05 eV above the Fermi level at the center of the surface Brillouin zone with a total bandwidth of 0.34±0.05 eV. This value is in good agreement with recent LDA calculations which predict an adatom-induced surface state Σ1 which should be half-filled. In this model, the adatoms are Si atoms occupying the T 4 site above a compact SiC(0001) (Si) termination. In contrast to the predicted metallic behavior, the U state remains completely unoccupied throughout the whole Brillouin zone, and the surface is semiconducting. We propose that some charge transfer from the Si adatoms towards subsituted C atoms in the terminating bilayer stabilizes the reconstruction by moving up the Σ1 state away from the Fermi level.

scholarly journals Flatness and boundness of photonic drumhead surface state in a metallic lattice

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yu Wang ◽  
Xiaoxi Zhou ◽  
Shanshan Li ◽  
Wenya Zhang ◽  
Chuandeng Hu ◽  
...  
Keyword(s):  
Band Structure ◽  
Brillouin Zone ◽  
Surface State ◽  
Bound State ◽  
Experimental Investigations ◽  
Far Field ◽  
Reflection Measurement ◽  
Potential Applications ◽  
Surface Brillouin Zone ◽  
Symmetry Protected

AbstractNodal chain (NC) semi-metals have the degeneracy of interlacing rings in their band structure in momentum space. With the projection of degenerate rings towards crystal boundaries, there is a special type of surface dispersion appearing at surface Brillouin zone and termed drumhead surface state (DSS). Previously, experimental investigations on photonic NC and DSS have been done on metallic photonic crystals at microwave frequencies. However, far-field detection of DSS and its coupling to radiative modes in free space have not been studied. In the work, we analyze the photonic DSS in a metallic lattice by angle-resolved far-field reflection measurement and numerical simulation at terahertz (THz) frequencies, and reveal its flatness and boundness in band structure, even in the radiation continuum. Particularly, the DSS band can be tuned being from negatively dispersive via flat to positively dispersive by a single surface parameter, and the DSS at Γ point in surface Brillouin zone is in fact a symmetry-protected bound state in the continuum. Our results might have some potential applications towards THz photonics.

Interfacial Adhesion of Cu to Self-Assembled Monolayers on SiO2

2001 ◽  
Vol 695 ◽  
Author(s):  
G. Cui ◽  
M. Lane ◽  
K. Vijayamohanan ◽  
G. Ramanath
Keyword(s):  
Binding Energy ◽  
Photoelectron Spectroscopy ◽  
Interfacial Adhesion ◽  
Adhesion Energy ◽  
Binding Energies ◽  
Self Assembled Monolayers ◽  
Chemical Binding ◽  
Barrier Materials ◽  
Assembled Monolayers ◽  
Self Assembled

ABSTRACTAs the critical feature size in microelectronic devices continues to decrease below 100 nm, new barrier materials of > 5 nm thickness are required. Recently we have shown that self-assembled monolayers (SAMs) are attractive candidates that inhibit Cu diffusion into SiO2. For SAMs to be used as barriers in real applications, however, they must also promote adhesion at the Cu/dielectric interfaces. Here, we report preliminary quantitative measurements of interfacial adhesion energy and chemical binding energy of Cu/SiO2 interfaces treated with nitrogen-terminated SAMs. Amine-containing SAMs show a ~10% higher adhesion energy with Cu, while interfaces with Cu-pyridine bonds actually show degraded adhesion, when compared with that of the reference Cu/SiN interface. However, X-ray photoelectron spectroscopy (XPS) measurements show that Cu-pyridine and Cu-amine interactions have a factor-of-four higher binding energy than that of Cu-N bonds at Cu/SiN interfaces. The lack of correlation between adhesion and chemical binding energies is most likely due to incomplete coverage of SAMs.

Xps Analysis of the Sapphire Surface as a Function of High Temperature Vacuum Annealing

1989 ◽  
Vol 159 ◽  
Author(s):  
E.D. Richmond
Keyword(s):  
High Temperature ◽  
Binding Energy ◽  
Photoelectron Spectroscopy ◽  
Vacuum Annealing ◽  
Xps Analysis ◽  
Chemical Changes ◽  
Cleaning Procedure ◽  
Sapphire Surface ◽  
X Ray ◽  
First Time

ABSTRACTFor the first time the (1102) surface of sapphire has been investigated by X-ray photoelectron spectroscopy to ascertain chemical changes resulting from annealing in vacuum at 1300° C and 1450° C. As received substrates had a substantial surface C contaminant. For substrates that were chemically cleaned before inserting them into the MBE system no trace of carbon is detected. A residual flourine contaminant results from the cleaning procedure and is desorbed by the vacuum annealing. Spectra of annealed substrates are compared to the unannealed chemically cleaned substrates. The annealed substrates exhibit 0.4 to 0.5 eV shift to higher binding energy of the Al peak and a 0.3 eV shift to higher binding energy of the O peak. In addition, a 2% depletion of oxygen from the surface occurs.

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