MORPHOLOGICAL ELEMENTS OF THE RuO2·TiO2 COATING AS DISPLAYED AT DIFFERENT SCALE LEVELS AND POSSIBLE MODELS OF ITS CONDUCTIVITY

2003 ◽  
Vol 10 (01) ◽  
pp. 101-104 ◽  
Author(s):  
N. B. KONDRIKOV ◽  
E. V. SHCHITOVSKAYA ◽  
M. S. VASILYEVA ◽  
V. G. KURYAVY ◽  
V. M. BOUZNIK
Keyword(s):  
Solid Solution ◽  
Fermi Level ◽  
Scanning Tunneling Microscopy ◽  
Electronic Conductivity ◽  
Scanning Tunneling ◽  
Simultaneous Presence ◽  
Tunneling Microscopy ◽  
Roughness Elements ◽  
Scale Levels ◽  
Microscopy Data

The roughness elements displayed at different scales on the RuO 2· TiO 2 (ORTA) coating obtained by means of calcination on a titanium support were studied with the methods of electronic scanning microscopy and scanning tunneling microscopy. Two models for the emergence of the electronic conductivity, possible for different ORTA components, were discussed on the basis of the scanning tunneling microscopy data. One of the models, formerly known as the "islet" model, assumes the simultaneous presence of conducting nanoclusters of RuO 2 and nonconducting clusters of TiO 2 separated in space. Another model assumes the presence of similar volume-conducting nanoclusters of cross-size ~ 1 nm, every one of which is a solid solution of RuO 2· TiO 2 composed in such a way as to have the Fermi level common for RuO 2 and TiO 2.

ELECTRONIC STATES OF C60 AND C70 MOLECULES ON Si(111)-(7×7) SURFACE

1996 ◽  
Vol 03 (01) ◽  
pp. 915-921
Author(s):  
T. YAMAGUCHI ◽  
N. FUJIMA
Keyword(s):  
Fermi Level ◽  
Scanning Tunneling Microscopy ◽  
Charge Density ◽  
Electronic States ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
High Charge ◽  
High Charge Density ◽  
Microscopy Images ◽  
Single Bonds

Electronic states are calculated by the DV-Xα-LCAO method for two model clusters C 60 Si 101 H 60 and C 70 Si 101 H 60 of the C 60/Si(111) and C 70/Si(111) surfaces where fullerene molecules reside at the center of the unfaulted half of the 7×7 unit cell. For the C 60 molecule, occupied (unocupied) orbitals near the Fermi level have high charge density around double bonds between two hexagons (around single bonds on pentagons). For the C 70 molecule, both occupied and unoccupied orbitals have high charge density around single bonds. The charge density of an individual occupied (unoccupied) orbital has a shape like a trigonal doughnut (clover leaves) over the C 60 molecule, and it is high in three (four) regions over the C 70 molecule which is nearly C s(D2) symmetry. These should be compared with the scanning tunneling microscopy images.

The use of splines to analyze scanning tunneling microscopy data

1990 ◽  
Vol 8 (4) ◽  
pp. 3548-3554
Author(s):  
H. Wormeester ◽  
H. J. P. van Midden ◽  
G. A. M. Kip ◽  
A. G. B. M. Sasse
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Microscopy Data

scholarly journals Сканирующая туннельная микроскопия в халькогенидных термоэлектриках (Bi, Sb)-=SUB=-2-=/SUB=-(Te, Se, S)-=SUB=-3-=/SUB=-

2022 ◽  
Vol 56 (1) ◽  
pp. 22
Author(s):  
Л.Н. Лукьянова ◽  
И.В. Макаренко ◽  
О.А. Усов
Keyword(s):  
Solid Solution ◽  
Scanning Tunneling Microscopy ◽  
Thermoelectric Properties ◽  
Solid Solutions ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Native Defects ◽  
Antisite Defects ◽  
Standard Deviations

The morphology studies of the interlayer surface (0001) were carried out by the method of scanning tunneling microscopy in the n–Bi1.6Sb0.4Te2.94Se0.06, n- Bi1.8Sb0.2Te2.82Se0.09S0.09, p-Bi0.8Sb1.2Te2.91Se0.09 and p-Bi0.7Sb1.3Te2.91Se0.09 solid solutions. On the surface (0001), impurity and native defects were found (vacancies of tellurium, antisite defects, adatoms), formed in the compositions due to substitutions of atoms in the Bi2Te3 sublattices. The average values of HM and the standard deviations of HS in height in the distribution of atoms on the surface are determined depending on the composition of the solid solution. The effect of detected defects on the thermoelectric properties of solid solutions has been established.

A study on α-RuCl3 crystal structure by scanning tunneling microscopy

1989 ◽  
Vol 47 ◽  
pp. 30-31
Author(s):  
H.-J. Cantow ◽  
H. Hillebrecht ◽  
S. Magonov ◽  
H. W. Rotter ◽  
G. Thiele
Keyword(s):  
Crystal Structure ◽  
Density Distribution ◽  
Scanning Tunneling Microscopy ◽  
Electron Density ◽  
Structure Determination ◽  
Electron Density Distribution ◽  
Scanning Tunneling ◽  
Monoclinic Space Group ◽  
Tunneling Microscopy ◽  
X Ray

From X-ray analysis, the conclusions are drawn from averaged molecular informations. Thus, limitations are caused when analyzing systems whose symmetry is reduced due to interatomic interactions. In contrast, scanning tunneling microscopy (STM) directly images atomic scale surface electron density distribution, with a resolution up to fractions of Angstrom units. The crucial point is the correlation between the electron density distribution and the localization of individual atoms, which is reasonable in many cases. Thus, the use of STM images for crystal structure determination may be permitted. We tried to apply RuCl3 - a layered material with semiconductive properties - for such STM studies. From the X-ray analysis it has been assumed that α-form of this compound crystallizes in the monoclinic space group C2/m (AICI3 type). The chlorine atoms form an almost undistorted cubic closed package while Ru occupies 2/3 of the octahedral holes in every second layer building up a plane hexagon net (graphite net). Idealizing the arrangement of the chlorines a hexagonal symmetry would be expected. X-ray structure determination of isotypic compounds e.g. IrBr3 leads only to averaged positions of the metal atoms as there exist extended stacking faults of the metal layers.

Roughness measurements of nonlinear optical polymer films by scanning tunneling microscopy

1989 ◽  
Vol 47 ◽  
pp. 22-23
Author(s):  
I. H. Musselman ◽  
R.-T. Chen ◽  
P. E. Russell
Keyword(s):  
Surface Roughness ◽  
Scanning Tunneling Microscopy ◽  
Nonlinear Optical ◽  
Polymer Surface ◽  
Light Extinction ◽  
Scanning Tunneling ◽  
Silicon Substrates ◽  
Tunneling Microscopy ◽  
Optical Polymer ◽  
Total Light

Scanning tunneling microscopy (STM) has been used to characterize the surface roughness of nonlinear optical (NLO) polymers. A review of STM of polymer surfaces is included in this volume. The NLO polymers are instrumental in the development of electrooptical waveguide devices, the most fundamental of which is the modulator. The most common modulator design is the Mach Zehnder interferometer, in which the input light is split into two legs and then recombined into a common output within the two dimensional waveguide. A π phase retardation, resulting in total light extinction at the output of the interferometer, can be achieved by changing the refractive index of one leg with respect to the other using the electrooptic effect. For best device performance, it is essential that the NLO polymer exhibit minimal surface roughness in order to reduce light scattering. Scanning tunneling microscopy, with its high lateral and vertical resolution, is capable of quantifying the NLO polymer surface roughness induced by processing. Results are presented below in which STM was used to measure the surface roughness of films produced by spin-coating NLO-active polymers onto silicon substrates.

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