Сканирующая туннельная микроскопия в халькогенидных термоэлектриках (Bi, Sb)-=SUB=-2-=/SUB=-(Te, Se, S)-=SUB=-3-=/SUB=-
Keyword(s):
The morphology studies of the interlayer surface (0001) were carried out by the method of scanning tunneling microscopy in the n–Bi1.6Sb0.4Te2.94Se0.06, n- Bi1.8Sb0.2Te2.82Se0.09S0.09, p-Bi0.8Sb1.2Te2.91Se0.09 and p-Bi0.7Sb1.3Te2.91Se0.09 solid solutions. On the surface (0001), impurity and native defects were found (vacancies of tellurium, antisite defects, adatoms), formed in the compositions due to substitutions of atoms in the Bi2Te3 sublattices. The average values of HM and the standard deviations of HS in height in the distribution of atoms on the surface are determined depending on the composition of the solid solution. The effect of detected defects on the thermoelectric properties of solid solutions has been established.
1993 ◽
Vol 71
(8)
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pp. 1176-1179
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1993 ◽
Vol 143-147
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pp. 1311-1318
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Keyword(s):
1990 ◽
Vol 112
(3)
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pp. 1030-1033
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2003 ◽
Vol 10
(01)
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pp. 101-104
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1989 ◽
Vol 47
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pp. 30-31
1989 ◽
Vol 47
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pp. 22-23
1989 ◽
Vol 47
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pp. 18-19
1989 ◽
Vol 47
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pp. 330-331
1990 ◽
Vol 48
(1)
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pp. 318-319