CATALYTIC EFFECTS OF FERROCENE ON BONDING, OPTICAL AND STRUCTURAL PROPERTIES OF DIAMOND-LIKE CARBON FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

This paper reports catalytic effects of ferrocene on bonding, optical and structural properties of diamond-like carbon (DLC) thin films grown on silicon and quartz substrates by microwave surface-wave plasma chemical vapor deposition. For film deposition, helium and methane gases were used as plasma source. Bonding, optical and structural properties of the DLC films were measured both with and without using ferrocene as a catalyst. The ferrocene content in the DLC was confirmed by X-ray spectroscopy (XPS) measurement. The optical band gap decreased from 2.7 eV (without ferrocene) to 1.6 eV (with ferrocene). Raman spectra of the ferrocene content film shows that the G-peak was more pronounced compared to the film without ferrocene. Results suggest that appropriate concentration of ferrocene in DLC film helps to reduce the optical band gap because of ferrocene-induced graphitization.

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THE INFLUENCE OF METHANE GAS PRESSURE ON THE OPTICAL, ELECTRICAL AND STRUCTURAL PROPERTIES OF NITROGENATED AMORPHOUS CARBON FILMS GROWN BY SURFACE WAVE MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

Surface Review and Letters ◽

10.1142/s0218625x04006487 ◽

2004 ◽

Vol 11 (06) ◽

pp. 553-558 ◽

Cited By ~ 1

Author(s):

M. RUSOP ◽

A. M. M. OMER ◽

S. ADHIKARI ◽

S. ADHIKARY ◽

H. MOKUTANI ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Surface Wave ◽

Structural Properties ◽

Amorphous Carbon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Gas Pressure ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition

The influence of methane gas ( CH 4) pressure on the optical, electrical and structural properties of the nitrogenated amorphous carbon nitride ( a - C : N ) films grown by microwave surface wave plasma chemical vapor deposition (SWP-CVD) on quartz and silicon (100) substrates have been studied. The a - C : N films are deposited with varying CH 4 gas ranging from 5 to 20 ml/min. To incorporate nitrogen in the film, we have introduced nitrogen gas ( N ) at 5 ml/min in the chamber. The effects of CH 4 gas pressure on the surface morphology, composition, structure, and electrical properties of the N -incorporated camphoric carbon thin films have been investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM), Auger electron spectroscopy (AES), UV-visible spectroscopy and four-probe resistance measurement. We have succeed in growing a - C : N thin films using SWP-CVD at room temperature and found that the amorphous structure of a - C films can be changed and is strongly dependent on the CH 4 gas source.

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NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

International Journal of Modern Physics B ◽

10.1142/s0217979209048559 ◽

2009 ◽

Vol 23 (09) ◽

pp. 2159-2165 ◽

Cited By ~ 2

Author(s):

SUDIP ADHIKARI ◽

MASAYOSHI UMENO

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Surface Wave ◽

Amorphous Carbon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Plasma Chemical ◽

Hydrogenated Amorphous Carbon ◽

Plasma Chemical Vapor Deposition ◽

Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

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