STRUCTURAL AND OPTICAL PROPERTIES OF n-TYPE POROUS SILICON — EFFECT OF HF CONCENTRATION

2007 ◽  
Vol 14 (02) ◽  
pp. 293-300 ◽  
Author(s):  
N. JEYAKUMARAN ◽  
B. NATARAJAN ◽  
S. RAMAMURTHY ◽  
V. VASU
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Pore Size ◽  
Concentration Ratio ◽  
Silicon Wafers ◽  
Structural And Optical Properties ◽  
Type Silicon

Porous silicon layers have been prepared from n-type silicon wafers of (100) orientation. SEM, XRD, FTIR, and PL have been used to characterize the morphological and optical properties of porous silicon. The influence of varying HF concentration in the anodizing solution, on structural and optical properties of porous silicon has been investigated. It is observed that pore size increases with HF:ethanol concentration ratio and attain maximum for 1:2 ratio and then decreases.

STRUCTURAL AND OPTICAL PROPERTIES OF n-TYPE POROUS SILICON: EFFECT OF LIGHT ILLUMINATION

2008 ◽  
Vol 15 (06) ◽  
pp. 897-901 ◽  
Author(s):  
N. JEYAKUMARAN ◽  
B. NATARAJAN ◽  
N. PRITHIVIKUMARAN ◽  
S. RAMAMURTHY ◽  
V. VASU
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Pore Size ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Chemical Species ◽  
Illumination Level ◽  
Light Illumination ◽  
Structural And Optical Properties ◽  
Effect Of Light

Porous silicon (PS) layers have been prepared from n-type silicon wafers of (100) orientation. SEM, FTIR, and PL have been used to characterize the morphological and optical properties of PS. The influence of varying light illumination in the anodizing solution, on structural and optical properties of PS, has been investigated. It is observed that pore size increases with light illumination level, attains maximum for 17.5 mW/m2 and then decreases. The PL spectrum peak shifts toward the higher energy side, which supports the quantum confinement effect in PS. The FTIR shows that the Si – H n peaks are observed at the surface of the PS layer and these chemical species also give raise the PL in PS.

Morphological, structural and optical properties of GaN grown on porous silicon/Si(100) substrate

2008 ◽  
Vol 62 (3) ◽  
pp. 515-519 ◽  
Author(s):  
A. Matoussi ◽  
F. Ben Nasr ◽  
R. Salh ◽  
T. Boufaden ◽  
S. Guermazi ◽  
...  
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Structural And Optical Properties

Correlation between structural and optical properties of porous silicon treated with Erbium(III)

2018 ◽  
Vol 29 (11) ◽  
pp. 9452-9459
Author(s):  
Zouheir Bouznif ◽  
Chohdi Amri ◽  
Ahmed Zarroug ◽  
Anoir Ben Fradj ◽  
Lotfi Derbali ◽  
...  
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Structural And Optical Properties

ChemInform Abstract: Structural and Optical Properties of Oxidized Porous Silicon Layers Activated by Zn2SiO4:Mn2+.

ChemInform ◽  
2010 ◽  
Vol 33 (36) ◽  
pp. no-no
Author(s):  
N. Taghavinia ◽  
G. Lerondel ◽  
H. Makino ◽  
A. Parisini ◽  
A. Yamamoto ◽  
...  
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Structural And Optical Properties ◽  
Oxidized Porous Silicon

scholarly journals Optical Properties of Porous Silicon p-Si (100)

2019 ◽  
Vol 20 (3) ◽  
pp. 264-268
Author(s):  
P.O. Gentsar ◽  
M.V. Vuichyk ◽  
M.V. Isaev ◽  
P.O. Lischuk
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Single Crystal ◽  
Pore Size ◽  
Band Gap ◽  
Spectral Range ◽  
Reflectance Spectra ◽  
Transmission Spectra

In this paper the reflectance spectra and transmission spectra of p-Si (100) porous silicon (PS) and silicon wires in the spectral range of 200 ÷ 1800 nm were investigated. Pore size of PS was 5 μm (lpor Si layer) and 50 μm (lpor Si layer) with porosity of 45 %, 55 % and 65 %. The length of silicon wires varies from 5.5 μm, to 50 μm with a porosity of 60 %. The decrease in the band gap of p-Si (100) porous silicon and silicon wires which grown on both sides of p-Si (100) as compared to the single crystal p-Si (100) is explained by the quantum-sized effect that occurs in the investigated objects.

scholarly journals Морфология, структурные и оптические свойства наноструктур кремния, полученные в растворе, содержащем гексафторосиликат водорода H-=SUB=-2-=/SUB=-(SiF-=SUB=-6-=/SUB=-)

2020 ◽  
Vol 128 (9) ◽  
pp. 1375
Author(s):  
Ш.А. Жуматова ◽  
С.М. Манаков ◽  
Е. Сагидолда ◽  
М.Б. Дарменкулова ◽  
Р.М. Азамат ◽  
...  
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Ethyl Alcohol ◽  
Scanning Probe Microscopy ◽  
Electrochemical Etching ◽  
Scanning Probe ◽  
Silicon Nanostructures ◽  
Structural And Optical Properties ◽  
Boron Doped ◽  
P Type

Boron doped porous silicon with the observed photoluminescence with a crystallographic orientation of (100), which was fabricated based on a p-type silicon substrate using electrochemical etching in a solution containing hexafluorosilicic acid and ethyl alcohol was studied. A comparative analysis of the morphology, structural and optical properties of silicon nanostructures obtained in a solution containing H2(SiF6) and ethanol and samples obtained in a solution containing HF and ethanol was performed. Morphology, structural and optical properties were studied using scanning probe microscopy and spectrophotometry. It was shown that samples of porous silicon obtained in a solution containing H2(SiF6) and ethanol are characterized by improved optical properties, in particular, they exhibit more intense photoluminescence compared to samples obtained in solutions with HF and ethyl alcohol.

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