CHARACTERIZATION OF SURFACE COMPOSITION AND MICROSTRUCTURE OF H13 STEEL IMPLANTED BY Ti IONS USING MASKING IMPLANTATION PROCEDURE

2008 ◽  
Vol 15 (04) ◽  
pp. 481-485
Author(s):  
J. H. YANG ◽  
S. LI ◽  
M. F. CHENG ◽  
X. D. LUO
Keyword(s):  
Depth Profile ◽  
Surface Composition ◽  
Grazing Angle ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
H13 Steel ◽  
Transmission Electron ◽  
Concentration Depth Profile ◽  
Pin On Disc

Ti and C ions extracted from a metal vapor vacuum arc ion source (MEVVA) were implanted into H13 steel using a masking procedure to ensure reproducible conditions for testing and subsequent analysis. An optical interference microscope and pin-on-disc apparatus investigated the wear and friction characteristics of the steel. The Ti concentration depth profile from Rutherford backscattering spectroscopy was compared with that calculated by a TRIDYN code. It was observed by grazing-angle X-ray diffraction and transmission electron microscopy that carbide of Ti appeared in the doped region. The concentration depth profile and microstructure analysis can serve to illuminate the wear resistance improvement mechanisms of the Ti -implanted steel.

CHARACTERIZATION OF SURFACE PROPERTIES AND MICROSTRUCTURE OF PVD-TiN FILMS USING MEVVA ION IMPLANTATION

2006 ◽  
Vol 13 (04) ◽  
pp. 519-524
Author(s):  
J. H. YANG ◽  
M. F. CHENG ◽  
X. D. LUO ◽  
T. H. ZHANG
Keyword(s):  
Wear Resistance ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Metal Vapor ◽  
Implantation Dose ◽  
Ion Source ◽  
Vacuum Arc ◽  
Tin Film ◽  
Transmission Electron ◽  
Pin On Disc

The PVD- TiN film was implanted with titanium ions and the improvement in surface wear resistance was investigated. Ti ion implantation was done using a metal vapor vacuum arc (MEVVA) ion source with an implantation dose of 2 × 1016 ions/cm2 and at an extraction voltage of 48 kV. The wear characteristics of the implanted zone was measured and compared to the performance of the unimplanted zone by a pin-on-disc apparatus and an optical interference microscope. The structure of the implanted zone and unimplanted one was observed by X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). A dynamic TRIM called TRIDYN was used to calculate the concentration depth profile of implanted Ti in TiN to investigate the profile of multi-charge state ions. The results showed that the improved wear resistance of the TiN film was mainly due to the presence of nano-order TiN crystal grains after Ti ion implantation.

COMPARISON OF WEAR RESISTANCE MECHANISMS OF DIE STEEL IMPLANTED WITH C AND Mo IONS

2007 ◽  
Vol 14 (03) ◽  
pp. 517-520
Author(s):  
M. F. CHENG ◽  
J. H. YANG ◽  
X. D. LUO ◽  
T. H. ZHANG
Keyword(s):  
Wear Resistance ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
Resistance Mechanisms ◽  
Ion Source ◽  
Vacuum Arc ◽  
H13 Steel ◽  
Die Steel ◽  
X Ray

Mo and C ions extracted from a metal vapor vacuum arc ion source were implanted into the surface of die steel (H13) to compare the wear resistance mechanisms of the implanted samples, respectively. The concentration depth profiles of implanted ions were measured using Rutherford backscattering spectroscopy and calculated by a code called TRIDYN. The structures of the implanted steel were observed by X-ray photoelectron spectroscopy and grazing-angle X-ray diffraction, respectively. It was found that the conventional heat-treated H13 steel could not be further hardened by the subsequent implanted C ions, and the thickness of the implanted layer was not an important factor for the Mo and C ion implantation to improve the wear resistance of the H13 steel. Mo ion implantation could obviously improve the wear resistance of the steel at an extraction voltage of 48 kV and a dose of 5 × 1017 cm -2 due to formation of a modification layer of little oxidation with Mo 2 C in the implanted surface.

THE VOID EFFECT OF MEVVA W ION IMPLANTATION ON THE TRIBOLOGICAL PROPERTIES OF H13 STEEL

2004 ◽  
Vol 11 (04n05) ◽  
pp. 363-366 ◽  
Author(s):  
JIANHUA YANG ◽  
TONGHE ZHANG
Keyword(s):  
Mechanical Properties ◽  
Ion Implantation ◽  
Ion Beam ◽  
Metal Vapor ◽  
Implantation Dose ◽  
Ion Source ◽  
Vacuum Arc ◽  
H13 Steel ◽  
Voltage Electron ◽  
Tungsten Concentration

H13 steel samples were implanted with tungsten using a metal vapor vacuum arc (MEVVA) ion source, with an implantation dose of 1×1017 cm -2, an extraction acceleration of 30 kV and pulsed ion beam fluxes of between 0.3 mA·cm -2 and 6 mA·cm -2. The surface mechanical properties and microstructure for the W-implanted samples was characterized by the Rutherford backscattering spectroscope (RBS) and a high voltage electron microscope (HVEM). Experimental results of wear and hardness indicated that the hardness and wear of H13 steel increased when the voids were produced by tungsten ion implantation with a high pulsed current density. Forming causes for voids and their influence on the tungsten concentration depth profile in the implanted H13 steel and the surface mechanical properties were discussed in terms of spike theory.

TEM and PL Study of FeSi2 Precipitates Formed in Si by Iron Implantation Using a Metal Vapor Vacuum Arc Ion Source

2002 ◽  
Vol 737 ◽  
Author(s):  
Y. Gao ◽  
W.Y. Cheung ◽  
S.P. Wong ◽  
G. Shao ◽  
K.P. Homewood
Keyword(s):  
Metal Vapor ◽  
Ion Source ◽  
Annealing Process ◽  
Crystal Defects ◽  
Vacuum Arc ◽  
Defect Structures ◽  
Dislocation Loops ◽  
Line Shapes ◽  
Implantation Temperature ◽  
Transmission Electron

ABSTRACTIn this work, FeSi2 precipitates were formed in Si by iron implantation using a metal vapor vacuum arc ion source. Transmission electron microscopy (TEM) was used to determine the crystal and defect structures of the implanted samples. It was found that the implantation temperature played an important role on the shape and phase formation of the FeSi2 precipitates, as well as the formation and distribution of the dislocation loops. When implantation was performed at an elevated temperature of about 380°C, there were a lot of dislocation loops formed and only β-FeSi2 precipitates were observed. When implanted at a low temperature of about -100°C followed by a dual step annealing process, the samples were found to be free of dislocation loops, and γ-FeSi2 and β-FeSi2 precipitates coexisting and coherent with the silicon substrate were observed. Photoluminescence (PL) spectra of different line shapes from these implanted samples were observed. By combining the PL and TEM results, the origins of the PL peaks in different samples could be distinguished and identified to be from β-FeSi2 precipitates or from crystal defects in the samples.

Performance of a high‐current metal vapor vacuum arc ion source

1990 ◽  
Vol 61 (12) ◽  
pp. 3775-3782 ◽  
Author(s):  
Hiroshi Shiraishi ◽  
Ian G. Brown
Keyword(s):  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Current

Study on the Dopedβ-FeSi 2 Obtained by Metal Vapor Vacuum Arc Ion Source Implantation and Post-Annealing

2002 ◽  
Vol 730 ◽  
Author(s):  
Shuangbao Wang ◽  
Hong Liang ◽  
Peiran Zhu
Keyword(s):  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
Post Annealing ◽  
Strong Current ◽  
Xrd Patterns ◽  
Fe Ions

Abstractβ-FeSi2 was firstly formed by implanting Si wafers with Fe ions at 50 kV to a dose of 5×1017/cm2in a strong current Metal Vapor Vacuum Arc (MEVVA) implanter. Secondly, Ti implantation was performed on these Fe as-implanted samples. The Fe + Ti implanted samples were furnace annealed in vacuum at temperatures ranging from 650 to 975°C. The XRD patterns of the annealed samples correspond to β-FeSi2 structure (namely β-Fe(Ti)Si2). When annealing was done above 1050°C, the β-Fe(Ti)Si2 transformed into α-Fe(Ti)Si2. This implies that introducing Ti stabilizes the β-FeSi2 phase. Resistance measurements were also performed.

scholarly journals Formation of Buried Epitaxial Si-Ge Alloy Layers in Si Crystal by High Dose Ge ION Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Kin Man Yu ◽  
Ian G. Brown ◽  
Seongil Im
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Ion Channeling

ABSTRACTWe have synthesized single crystal Si1−xGex alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 100 keV and with doses ranging from 1×1016 to to 7×1016 ions/cm2 were implanted into Si <100> crystals at room temperature, resulting in the formation of Si1−xGex alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers was initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si1−xGex layers with full width at half maximum ∼100nm were formed under a ∼30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

Solid Phase Epitaxy of Implanted Si-Ge-C Alloys

1995 ◽  
Vol 388 ◽  
Author(s):  
Xiang Lu ◽  
Nathan W. Cheung
Keyword(s):  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
High Dose Rate ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Rutherford Back Scattering

AbstractSi1-x-yGexCy/Si heterostuctures were formed on Si (100) surface by Ge and C implantation with a high dose rate MEtal - Vapor Vacuum arc (MEVVA) ion source and subsequent Solid Phase Epitaxy (SPE). after thermal annealing in the temperature range from 600 °C to 1200 °C, the implanted layer was studied using Rutherford Back-scattering Spectrometry (RBS), cross-sectional High Resolution Transmission Electron Microscopy (HRTEM) and fourbounce X-ray Diffraction (XRD) measurement. Due to the small lattice constant and wide bandgap of SiC, the incorporation of C into Si-Ge can provide a complementary material to Si-Ge for bandgap engineering of Si-based heterojunction structure. Polycrystals are formed at temperature at and below 1000 °C thermal growth, while single crystal epitaxial layer is formed at 1100 °C and beyond. XRD measurements near Si (004) peak confirm the compensation of the Si1-x Gex lattice mismatch strain by substitutional C. C implantation is also found to suppress the End of Range (EOR) defect growth.

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